Control of The Sb Redistribution in Strained SiGe Layers Using Point Defect Injection

1998 ◽  
Vol 510 ◽  
Author(s):  
A.Yu. Kuznetsovl ◽  
J. Cardenast ◽  
J.V. Grahnt ◽  
B.G. Svensson ◽  
A. Nylandsted Larsenl ◽  
...  
Keyword(s):  
Point Defect ◽  
Direct Injection ◽  
Silicon Layer ◽  
Strained Si ◽  
Defect Injection ◽  
Strained Sige

AbstractSb diffusion in strained Si1−xGex (x = 0.1 and 0.2) layers during nitridation (in NH3, 810 °C) and oxidation (in dry O2, 825 and 900 °C) of Si/Si1−xGex/Si heterostructures is measured and, subsequently, compared with that obtained for treatments in vacuum. An enhancement (ν) or retardation (η) of Sb diffusion in strained Si1−xGex after nitridation/oxidation anneals is detected. For example, 810 (NH3) and 900 °C (O2) anneals results in ν ∼ 2 and η ∼ 0.15 in strained Si0.9Ge0.1, respectively. The retardation of Sb diffusion is attributed to the injection of excess self-interstitials (I) and strongly indicating low interstitialcy fraction of Sb diffusion in strained Si1−xGex. The enhancement of Sb diffusion may be due to direct injection of vacancies (V), but only if the V diffusivities are significantly different in Si and Si1−xGex, or depletion of I in the strained Si1−xGex layers caused by the excess V concentration at the top surface of silicon layer

ANTIMONY DIFFUSION IN SILICON GEMANIUM ALLOYS UNDER POINT DEFECT INJECTION

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4195-4198 ◽  
Author(s):  
AIHUA DAN ◽  
ARTHUR F. W. WILLOUGHBY ◽  
JANET M. BONAR ◽  
BARRY M. MCGREGOR ◽  
MARK G. DOWSETT ◽  
...  
Keyword(s):  
Point Defect ◽  
Computer Simulations ◽  
Point Defects ◽  
Silicon Germanium ◽  
Oxygen Atmosphere ◽  
Epitaxial Layers ◽  
Rapid Thermal Anneal ◽  
Strained Si ◽  
Defect Injection

Antimony diffusion in in-situ doped strained Si 0.9 Ge 0.1 epitaxial layers, subjected to point defects injection by rapid thermal anneal in oxygen atmosphere, was investigated as a function of temperature at range from 890°C to 1000°C. In this work, the effect of point defect injection on the diffusion of antimony in silicon and silicon-germanium alloys has confirmed the predominant mechanism for diffusion of Sb in Si and SiGe to be vacancy mediated. Diffusivities were obtained using computer simulations. Activation energies were calculated while the diffusivity of antinomy in SiGe under point defect injection as a function of temperature was presented.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers

2009 ◽  
Vol 156-158 ◽  
pp. 173-180 ◽  
Author(s):  
Nicholas S. Bennett ◽  
Chihak Ahn ◽  
Nicholas E.B. Cowern ◽  
Peter Pichler
Keyword(s):  
Silicon Germanium ◽  
Experimental Studies ◽  
Close Correlation ◽  
Theoretical Treatment ◽  
Strained Si ◽  
Early Theory ◽  
Stress Effects ◽  
Experimental Findings ◽  
First Time ◽  
Strained Sige

We present a review of both theoretical and experimental studies of stress effects on the solubility of dopants in silicon and silicon-germanium materials. Critical errors and limitations in early theory are discussed, and a recent treatment incorporating charge carrier induced lattice strain and correct statistics is presented. Considering all contributing effects, the strain compensation energy is the primary contribution to solubility enhancement in both silicon and silicon-germanium for dopants of technological interest. An exception is the case of low-solubility dopants, where a Fermi level contribution is also found. Explicit calculations for a range of dopant impurities in Si are presented that agree closely with experimental findings for As, Sb and B in strained Si. The theoretical treatment is also applied to account for stress effects in strained SiGe structures, which also show close correlation with recently derived experimental results for B-doped strained SiGe which are presented here for the first time.

Study of fluorine behavior in silicon by selective point defect injection

2005 ◽  
Vol 87 (1) ◽  
pp. 011902 ◽  
Author(s):  
M. N. Kham ◽  
H. A. W. El Mubarek ◽  
J. M. Bonar ◽  
P. Ashburn
Keyword(s):  
Point Defect ◽  
Defect Injection

Point Defect Injection Kinetics by N2O Oxidation of Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
C. Tsamis ◽  
D. N. Kouvatsos ◽  
D. Tsoukalas
Keyword(s):  
Point Defect ◽  
High Temperatures ◽  
Point Defects ◽  
Silicon Substrate ◽  
Oxidation Process ◽  
Stacking Faults ◽  
Defect Injection ◽  
Dry Oxidation ◽  
Kinetics Of

ABSTRACTThe influence of N2O oxidation of silicon on the kinetics of point defects at high temperatures is investigated. Oxidation Stacking Faults (OSF) are used to monitor the interstitials that are generated during the oxidation process. We show that at high temperatures (1050°-1150°C) the supersaturation of self-interstitials in the silicon substrate is enhanced when oxidation is performed in an N2O ambient compared to 100% dry oxidation. This behavior is attributed to the presence of nitrogen at the oxidizing interface. However, at lower temperatures this phenomenon is reversed and oxidation in N2O ambient leads to reduced supersaturation ratios.

Thermal Conductivity of Ultra Thin Single Crystal Silicon Layers: Part II — Experimental Data and Modeling at High Temperatures

2004 ◽  
Author(s):  
Wenjun Liu ◽  
Mehdi Asheghi ◽  
K. E. Goodson
Keyword(s):  
Experimental Data ◽  
Thermal Conductivity ◽  
Single Crystal ◽  
High Temperatures ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Boltzmann Transport ◽  
Crystal Silicon ◽  
Strained Si

Simulations of the temperature field in Silicon-on-Insulator (SOI) and strained-Si transistors can benefit from experimental data and modeling of the thin silicon layer thermal conductivity at high temperatures. This work presents the first experimental data for 20 and 100 nm thick single crystal silicon layers at high temperatures and develops algebraic expressions to account for the reduction in thermal conductivity due to the phonon-boundary scattering for pure and doped silicon layers. The model applies to temperatures range 300–1000 K for silicon layer thicknesses from 10 nm to 1 μm (and even bulk) and agrees well with the experimental data. In addition, the model has an excellent agreement with the predictions of thin film thermal conductivity based on thermal conductivity integral and Boltzmann transport equation, although it is significantly more robust and convenient for integration into device simulators. The experimental data and predictions are required for accurate thermal simulation of the semiconductor devices, nanostructures and in particular the SOI and strained-Si transistors.

Interdiffusion in strained Si/strained SiGe epitaxial heterostructures

2006 ◽  
Vol 22 (1) ◽  
pp. S55-S58 ◽  
Author(s):  
Guangrui (Maggie) Xia ◽  
Michael Canonico ◽  
Judy L Hoyt
Keyword(s):  
Strained Si ◽  
Epitaxial Heterostructures ◽  
Strained Sige

Anomalous Point Defect Injection During Pulsed Laser Melting Processes: Direct Evidence of Gai and Asi Profiles in GaAs

1991 ◽  
Vol 230 ◽  
Author(s):  
Yih Chang ◽  
Thomas W. Sigmon
Keyword(s):  
Point Defect ◽  
Gaas Substrate ◽  
Direct Evidence ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Atomic Scale ◽  
Large Temperature ◽  
Laser Melting ◽  
Defect Injection ◽  
First Time

AbstractSignificant point defect injection during a pulsed laser melt process is reported for the first time. Heteroepitaxial InxGa1-xAs/GaAs layers fabricated by a pulsed laser induced epitaxy technique are used in this study. Transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) and secondary ion mass spectrometry (SIMS) are employed to study the redistribution behavior of each species on the atomic scale. It is found that both the Si dopant species and the Ga, As, and In host atoms are injected into the underlying GaAs substrate. These species are then significantly redistributed, forming near spherical As-rich regions. Direct evidence of Asi and Gai (Ga and As interstitialcies) profiles in the GaAs substrate are also obtained for the first time. A hypothesis, based upon the combined effects of concentration impulse and large temperature gradients across the liquid-solid interface, is proposed to explain the significant solid phase diffusion observed during the pulsed laser melting process. We estimate the temperature gradient induced electric field during the process to be on the order of 104V/cm.

scholarly journals High-Field Hole Transport in Strained Si and SiGe by Monte Carlo Simulation: Full Band Versus Analytic Band Models

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 41-45 ◽  
Author(s):  
F. M. Bufler ◽  
P. Graf ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
High Field ◽  
Hole Transport ◽  
Band Model ◽  
Strained Si ◽  
Saturation Velocity ◽  
Full Band ◽  
Structure Description ◽  
Strained Sige

Monte Carlo results are presented for the velocity-field characteristics of holes in (i) unstrained Si, (ii) strained Si and (iii) strained SiGe using a full band model as well as an analytic nonparabolic and anisotropic band structure description. The full band Monte Carlo simulations show a strong enhancement of the drift velocity in strained Si up to intermediate fields, but yield the same saturation velocity as in unstrained Si. The drift velocity in strained SiGe is also significantly enhanced for low fields while being substantially reduced in the high-field regime. The results of the analytic band models agree well with the full band results up to medium field strengths and only the saturation velocity is significantly underestimated.

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