Observation of point defect injection from electrical deactivation of arsenic ultra-shallow distributions formed by ultra-low energy ion implantation and laser sub-melt annealing

2013 ◽  
Vol 11 (1) ◽  
pp. 16-19
Author(s):  
Evgeny Demenev ◽  
Florian Meirer ◽  
Zahi Essa ◽  
Damiano Giubertoni ◽  
Fuccio Cristiano ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Low Energy ◽  
Defect Injection ◽  
Melt Annealing

Special Aspects of High-Intensity Low-Energy Ion Implantation

2021 ◽  
Author(s):  
A. I. Ryabchikov ◽  
A. I. Ivanova ◽  
O. S. Korneva ◽  
D. O. Sivin
Keyword(s):  
Ion Implantation ◽  
High Intensity ◽  
Low Energy

Big channeling effects at low-energy ion implantation in silicon

1986 ◽  
Vol 97 (2) ◽  
pp. K135-K139 ◽  
Author(s):  
J. Bollmann ◽  
H. Klose ◽  
A. Mertens
Keyword(s):  
Ion Implantation ◽  
Low Energy

Conducting polymer formed by low energy gold ion implantation

2008 ◽  
Vol 93 (7) ◽  
pp. 073102 ◽  
Author(s):  
M. C. Salvadori ◽  
M. Cattani ◽  
F. S. Teixeira ◽  
I. G. Brown
Keyword(s):  
Ion Implantation ◽  
Conducting Polymer ◽  
Low Energy ◽  
Gold Ion

scholarly journals Engineering of gentiopicroside-producing yeast strain using low-energy ion implantation mediated synthetic biology

2016 ◽  
Vol 30 (4) ◽  
pp. 805-812
Author(s):  
Ting Wang ◽  
Weidong Qian ◽  
Yunfang Fu ◽  
Changlong Cai ◽  
Peihong Mao
Keyword(s):  
Synthetic Biology ◽  
Ion Implantation ◽  
Yeast Strain ◽  
Low Energy

scholarly journals Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

2007 ◽  
Vol 101 (12) ◽  
pp. 124313 ◽  
Author(s):  
M. Yang ◽  
T. P. Chen ◽  
J. I. Wong ◽  
C. Y. Ng ◽  
Y. Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Low Energy ◽  
Ge Nanocrystals

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

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