Anomalous Point Defect Injection During Pulsed Laser Melting Processes: Direct Evidence of Gai and Asi Profiles in GaAs

1991 ◽  
Vol 230 ◽  
Author(s):  
Yih Chang ◽  
Thomas W. Sigmon
Keyword(s):  
Point Defect ◽  
Gaas Substrate ◽  
Direct Evidence ◽  
Solid Phase ◽  
Pulsed Laser ◽  
Atomic Scale ◽  
Large Temperature ◽  
Laser Melting ◽  
Defect Injection ◽  
First Time

AbstractSignificant point defect injection during a pulsed laser melt process is reported for the first time. Heteroepitaxial InxGa1-xAs/GaAs layers fabricated by a pulsed laser induced epitaxy technique are used in this study. Transmission electron microscopy (TEM), energy-dispersive X-ray (EDX) and secondary ion mass spectrometry (SIMS) are employed to study the redistribution behavior of each species on the atomic scale. It is found that both the Si dopant species and the Ga, As, and In host atoms are injected into the underlying GaAs substrate. These species are then significantly redistributed, forming near spherical As-rich regions. Direct evidence of Asi and Gai (Ga and As interstitialcies) profiles in the GaAs substrate are also obtained for the first time. A hypothesis, based upon the combined effects of concentration impulse and large temperature gradients across the liquid-solid interface, is proposed to explain the significant solid phase diffusion observed during the pulsed laser melting process. We estimate the temperature gradient induced electric field during the process to be on the order of 104V/cm.

An Influence of the Si(111)3-4o Vicinal Surface on the Solid Phase Epitaxy of α-FeSi2 Nanorods and their Crystal Parameters

2019 ◽  
Vol 806 ◽  
pp. 30-35
Author(s):  
Nikolay Gennadievich Galkin ◽  
Konstantin N. Galkin ◽  
Sergei Andreevich Dotsenko ◽  
Dmitrii L'vovich Goroshko ◽  
Evgeniy Anatolievich Chusovitin ◽  
...  
Keyword(s):  
Direct Evidence ◽  
Solid Phase ◽  
Iron Silicide ◽  
Solid Phase Epitaxy ◽  
Vicinal Surface ◽  
Si Substrate ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Spe Method ◽  
First Time

The morphology and structure of iron silicide nanorods formed on Si (111) vicinal surface by the SPE method at T = 630 °C were studied. Optimal Fe coverage and Fe deposition rate for the formation of a dense array of the nanorods (54-65% of the substrate area) on Si (111) surface with 3-4o miscut angles were established. The aspect ratio of the nanorods is 1.9 – 3.3. Cross-sectional images of a high-resolution transmission electron microscopy (HRTEM) have shown that the nanorods have α-FeSi2 crystal structure. They are strained along the “a” axis and stretched along the “c” axis, which increased the unit cell volume by 10.3%. According to HRTEM image analysis, the nanorods have the following epitaxial relationships: α-FeSi2[01]//Si [10] and α-FeSi2(112)//Si (111). All the data obtained have provided, for the first time, a direct evidence of α-FeSi2 nanorods formation on Si (111) vicinal surface without noticeable penetration of Fe atoms into the Si substrate.

VLSI for Space Applications—Single Event Effect Investigation and Optical Analysis on an Integrated Laser Platform

2017 ◽  
Author(s):  
Samuel Chef ◽  
Chung Tah Chua ◽  
Yu Wen Siah ◽  
Philippe Perdu ◽  
Chee Lip Gan ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Single Event ◽  
Optical Analysis ◽  
Space Applications ◽  
Laser Probing ◽  
Single Event Effect ◽  
Evaluation Time ◽  
Black Boxes ◽  
System Use ◽  
First Time

Abstract Today’s VLSI devices are neither designed nor manufactured for space applications in which single event effects (SEE) issues are common. In addition, very little information about the internal schematic and usually nothing about the layout or netlist is available. Thus, they are practically black boxes for satellite manufacturers. On the other hand, such devices are crucial in driving the performance of spacecraft, especially smaller satellites. The only way to efficiently manage SEE in VLSI devices is to localize sensitive areas of the die, analyze the regions of interest, study potential mitigation techniques, and evaluate their efficiency. For the first time, all these activities can be performed using the same tool with a single test setup that enables a very efficient iterative process that reduce the evaluation time from months to days. In this paper, we will present the integration of a pulsed laser for SEE study into a laser probing, laser stimulation, and emission microscope system. Use of this system will be demonstrated on a commercial 8 bit microcontroller.

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

scholarly journals Revealing noncollinear magnetic ordering at the atomic scale via XMCD

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Fridtjof Kielgast ◽  
Ivan Baev ◽  
Torben Beeck ◽  
Federico Pressacco ◽  
Michael Martins
Keyword(s):  
Ground State ◽  
Magnetic Circular Dichroism ◽  
Magnetic Moments ◽  
Magnetic Ordering ◽  
Atomic Scale ◽  
Angle Of Incidence ◽  
X Ray ◽  
First Time ◽  
X Ray Absorption ◽  
Magnetic Sublattices

AbstractMass-selected V and Fe monomers, as well as the heterodimer $${\text{Fe}}_1{\text{V}}_1$$ Fe 1 V 1 , were deposited on a Cu(001) surface. Their electronic and magnetic properties were investigated via X-ray absorption (XAS) and X-ray magnetic circular dichroism (XMCD) spectroscopy. Anisotropies in the magnetic moments of the deposited species could be examined by means of angle resolving XMCD, i.e. changing the X-ray angle of incidence. A weak adatom-substrate-coupling was found for both elements and, using group theoretical arguments, the ground state symmetries of the adatoms were determined. For the dimer, a switching from antiparallel to parallel orientation of the respective magnetic moments was observed. We show that this is due to the existence of a noncollinear spin-flop phase in the deposited dimers, which could be observed for the first time in such a small system. Making use of the two magnetic sublattices model, we were able to find the relative orientations for the dimer magnetic moments for different incidence angles.

Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting

2007 ◽  
Vol 25 (6) ◽  
pp. 1847 ◽  
Author(s):  
Malek Tabbal ◽  
Taegon Kim ◽  
Jeffrey M. Warrender ◽  
Michael J. Aziz ◽  
B. L. Cardozo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Silicon Based

Point defect trapping in solid‐phase epitaxially grown silicon‐antimony alloys

1984 ◽  
Vol 55 (4) ◽  
pp. 837-840 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Point Defect ◽  
Solid Phase ◽  
Antimony Alloys

Optimization of thermal conductivity in composites loaded with the solid-solid phase-change materials

2018 ◽  
Vol 25 (6) ◽  
pp. 1157-1165
Author(s):  
Taoufik Mnasri ◽  
Adel Abbessi ◽  
Rached Ben Younes ◽  
Atef Mazioud
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Phase Change Materials ◽  
Solid Phase ◽  
Spherical Inclusions ◽  
First Case ◽  
The Matrix ◽  
Composite Conductivity ◽  
First Time

AbstractThis work focuses on identifying the thermal conductivity of composites loaded with phase-change materials (PCMs). Three configurations are studied: (1) the PCMs are divided into identical spherical inclusions arranged in one plane, (2) the PCMs are inserted into the matrix as a plate on the level of the same plane of arrangement, and (3) the PCMs are divided into identical spherical inclusions arranged periodically in the whole matrix. The percentage PCM/matrix is fixed for all cases. A comparison among the various situations is made for the first time, thus providing a new idea on how to insert PCMs into composite matrices. The results show that the composite conductivity is the most important consideration in the first case, precisely when the arrangement plane is parallel with the flux and diagonal to the entry face. In the present work, we are interested in exploring the solid-solid PCMs. The PCM polyurethane and a wood matrix are particularly studied.

Pulsed Laser Melting: The Effect of Implanted Solutes on the Resolidification Velocity

1983 ◽  
Vol 23 ◽  
Author(s):  
G. J. Galvin ◽  
J. W. Mayer ◽  
P. S. Peercy
Keyword(s):  
Electrical Conductance ◽  
Pulsed Laser ◽  
Solute Concentration ◽  
Atomic Percent ◽  
Supersaturated Solution ◽  
Solidification Velocity ◽  
Laser Melting ◽  
Solid Interface ◽  
Solution Studies ◽  
Nonequilibrium Segregation

ABSTRACTTransient electrical conductance has been used to measure the resolidification velocity in silicon containing implanted solutes. Nonequilibrium segregation of the solutes occurs during the rapid resolidification following pulsed laser melting. The velocity of the liquid-solid interface is observed to depend on the type and concentration of the solute. A 25% reduction in solidification velocity is observed for an implanted indium concentration of three atomic percent. Implanted oxygen is also shown to reduce the solidification velocity. The dependence of the velocity on solute concentration impacts a variety of segregation, trapping and supersaturated solution studies.

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