Broad beam low-energy ion source for ion-beam assisted deposition and material processing

2004 ◽  
Vol 75 (5) ◽  
pp. 1934-1936 ◽  
Author(s):  
D. A. Kotov
Shinku ◽  
2003 ◽  
Vol 46 (9) ◽  
pp. 708-711
Author(s):  
Takeshi SHIBAHARA ◽  
Masayoshi ABIKO ◽  
Yasuhito GOTOH ◽  
Hiroshi TSUJI ◽  
Junzo ISHIKAWA

2001 ◽  
Vol 668 ◽  
Author(s):  
Gerd Lippold ◽  
Horst Neumann ◽  
Axel Schindler

ABSTRACTWe report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°CBesides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.


1992 ◽  
Vol 63 (4) ◽  
pp. 2411-2413 ◽  
Author(s):  
H. Wituschek ◽  
M. Barth ◽  
W. Ensinger ◽  
G. Frech ◽  
D. M. Rück ◽  
...  

1996 ◽  
Vol 283 (1-2) ◽  
pp. 182-187
Author(s):  
S Mohajerzadeh ◽  
C.R Selvakumar ◽  
D.E Brodie ◽  
M.D Robertson ◽  
J.M Corbett

2006 ◽  
Author(s):  
A. V. Dvurechenskii ◽  
P. L. Novikov ◽  
Y. Khang ◽  
Zh. V. Smagina ◽  
V. A. Armbrister ◽  
...  

2011 ◽  
Vol 82 (8) ◽  
pp. 083302 ◽  
Author(s):  
Jindřich Mach ◽  
Tomáš Šamořil ◽  
Stanislav Voborný ◽  
Miroslav Kolíbal ◽  
Jakub Zlámal ◽  
...  

1995 ◽  
Vol 13 (6) ◽  
pp. 2836-2842 ◽  
Author(s):  
Y.‐W. Kim ◽  
I. Petrov ◽  
H. Ito ◽  
J. E. Greene

1996 ◽  
Vol 84 (1-3) ◽  
pp. 439-442 ◽  
Author(s):  
A. Königer ◽  
J.W. Gerlach ◽  
H. Wengenmair ◽  
C. Hammerl ◽  
J. Hartmann ◽  
...  

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