A broad beam cold cathode Penning ionization gauge ion source for ion‐beam‐assisted deposition

1996 ◽  
Vol 67 (10) ◽  
pp. 3494-3496 ◽  
Author(s):  
Yusheng Rao ◽  
Jiannan Wu ◽  
Taoguang Xu
2001 ◽  
Vol 668 ◽  
Author(s):  
Gerd Lippold ◽  
Horst Neumann ◽  
Axel Schindler

ABSTRACTWe report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°CBesides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.


1992 ◽  
Vol 63 (4) ◽  
pp. 2411-2413 ◽  
Author(s):  
H. Wituschek ◽  
M. Barth ◽  
W. Ensinger ◽  
G. Frech ◽  
D. M. Rück ◽  
...  

1988 ◽  
Vol 6 (4) ◽  
pp. 2451-2456 ◽  
Author(s):  
Yoshikazu Yoshida ◽  
Teruhito Ohnishi ◽  
Yuichi Hirofuji

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi

2018 ◽  
Vol 144 ◽  
pp. 351-355 ◽  
Author(s):  
Samah I. Radwan ◽  
H. El-Khabeary ◽  
A.G. Helal
Keyword(s):  
Ion Beam ◽  

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