Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on Si02 films

2006 ◽  
Author(s):  
A. V. Dvurechenskii ◽  
P. L. Novikov ◽  
Y. Khang ◽  
Zh. V. Smagina ◽  
V. A. Armbrister ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Assisted Deposition ◽  
Dense Arrays

A low energy ion beam assisted deposition technique for realizing iso-type SiGe/Si hetero-interface diodes

1996 ◽  
Vol 283 (1-2) ◽  
pp. 182-187
Author(s):  
S Mohajerzadeh ◽  
C.R Selvakumar ◽  
D.E Brodie ◽  
M.D Robertson ◽  
J.M Corbett
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Ion Beam Assisted Deposition

An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum

2011 ◽  
Vol 82 (8) ◽  
pp. 083302 ◽  
Author(s):  
Jindřich Mach ◽  
Tomáš Šamořil ◽  
Stanislav Voborný ◽  
Miroslav Kolíbal ◽  
Jakub Zlámal ◽  
...  
Keyword(s):  
Atomic Beam ◽  
Ion Beam ◽  
Ultrahigh Vacuum ◽  
Low Energy ◽  
Beam Source ◽  
Atomic Beam Source ◽  
Ion Beam Assisted Deposition

Mechanical characterisation of titanium nitride films formed by low- energy ion beam assisted deposition

1996 ◽  
Vol 84 (1-3) ◽  
pp. 439-442 ◽  
Author(s):  
A. Königer ◽  
J.W. Gerlach ◽  
H. Wengenmair ◽  
C. Hammerl ◽  
J. Hartmann ◽  
...  
Keyword(s):  
Titanium Nitride ◽  
Ion Beam ◽  
Low Energy ◽  
Mechanical Characterisation ◽  
Ion Beam Assisted Deposition

Low-energy ion beam-assisted deposition of giant magnetoresistive thin films

1996 ◽  
Vol 79 (8) ◽  
pp. 4939
Author(s):  
S. J. Guilfoyle ◽  
R. J. Pollard ◽  
P. J. Grundy
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Assisted Deposition

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

1989 ◽  
Vol 158 ◽  
Author(s):  
Zheng Xu ◽  
Toshihiko Kosugi ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Film Properties ◽  
Ion Beam Assisted Deposition ◽  
Current Voltage ◽  
Residual Damage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

Low grain size TiN thin films obtained by low energy ion beam assisted deposition

2001 ◽  
Vol 173 (3-4) ◽  
pp. 290-295 ◽  
Author(s):  
J.M. López ◽  
F.J. Gordillo-Vázquez ◽  
O. Böhme ◽  
J.M. Albella
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Assisted Deposition ◽  
Tin Thin Films

Fabrication of Nanoscale Gold Clusters by Low Energy Ion Irradiation

2007 ◽  
Vol 1020 ◽  
Author(s):  
Volha Abidzina ◽  
I. Tereshko ◽  
I. Elkin ◽  
V. Red'ko ◽  
S. Budak ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Discharge Plasma ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Absorption Spectrometry ◽  
Particle Growth ◽  
Gold Clusters ◽  
Low Energy ◽  
Glow Discharge Plasma ◽  
Ion Beam Assisted Deposition

AbstractThis work is focused on nanoscale gold particle formation by low-energy ion irradiation in glow-discharge plasma and studying particle growth by increasing time of exposure.SiO2+Au films on SiO2 substrates produced by ion beam assisted deposition (IBAD) were exposed to ion irradiation at 1.2 keV energy for 1-2 hours. Plasmon resonance appearance caused by nanoparticle formation was observed by Optical Absorption Spectrometry (OAS).

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