ALLIGATOR−An apparatus for ion beam assisted deposition with a broad‐beam ion source

1992 ◽  
Vol 63 (4) ◽  
pp. 2411-2413 ◽  
Author(s):  
H. Wituschek ◽  
M. Barth ◽  
W. Ensinger ◽  
G. Frech ◽  
D. M. Rück ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Broad Beam ◽  
Ion Beam Assisted Deposition

Ion beam assisted deposition of Cu(In,Ga)Se2 films for thin film solar cells

2001 ◽  
Vol 668 ◽  
Author(s):  
Gerd Lippold ◽  
Horst Neumann ◽  
Axel Schindler
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Scale Up ◽  
Ion Source ◽  
The Novel ◽  
Ion Energy ◽  
Broad Beam ◽  
Ion Beam Assisted Deposition ◽  
Beam Analysis ◽  
Selenization Process

ABSTRACTWe report on a novel ion beam selenization process. The reactive chalcogen component Se and a significant part of the thermal energy needed for CIGS formation is delivered directly into the growing surface by a low energy Se ion beam from a broad beam ion source. This highly controllable technique with respect to ion energy, dose and uniformity and with scale- up capabilities can be used in two ways either for selenization of metallic Cu/(In,Ga) thin film stacks or in co-deposition. In the case of co-deposition the CIGS growth temperature can be reduced to < 400°CBesides the description of the method we present results of Se ion beam analysis and properties of CIGS thin films, produced by the novel selenization process.

Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ecr Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam ◽  
Reactive Ion Beam Etching

Some properties of amorphous hydrogenated silicon nitride prepared by ion-beam-assisted deposition

1991 ◽  
Vol 69 (5) ◽  
pp. 553-557 ◽  
Author(s):  
P. Wilson ◽  
D. C. Craigen ◽  
D. E. Brodie
Keyword(s):  
Uv Light ◽  
Ion Beam ◽  
Wide Band ◽  
Ion Source ◽  
Wide Band Gap ◽  
Hydrogenated Silicon ◽  
Hydrogen Mixture ◽  
Ion Beam Assisted Deposition ◽  
Amorphous Hydrogenated Silicon ◽  
Low Energy Ions

Thin films of a-SiNx:H were deposited using the ion-beam-assisted deposition technique. Silicon was evaporated from a resistively heated carbon crucible while the substrate was bombarded with low-energy ions (100 eV). The feed gas used for the ion source was primarily ammonia (NH3), but a 90% nitrogen, 10% hydrogen mixture was also tried. The nitrogen–hydrogen mixture resulted in nonhydrogenated films. Both the absence of absorption in the IR spectrum owing to oxygen, and the increase in slope of the Tauc plots are evidence of an improvement in film morphology owing to the ion bombardment. The wide band-gap films photoconduct when exposed to UV light. The photoconducting property is lost when the films are exposed to air, and is restored when the samples are thermally annealed in a vacuum.

Ion Sources for Ion Beam Assisted Thin Film Deposmon

1995 ◽  
Vol 396 ◽  
Author(s):  
Igor V. Svadkovsk ◽  
Anatoly P. Dostanko
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ion Sources ◽  
Inert Gases ◽  
Anode Layer ◽  
High Current ◽  
Ion Beam Assisted Deposition ◽  
Ion Energies ◽  
Extended Range ◽  
Basic Distinction

AbstractTwo types of the ion sources for ion beam assisted deposition using inert gases, oxygen or nitrogen are reported. Their design and operational features are presented. Each of them has the properties of two existing main types of the gridless Hall sources: an end-Hall source and the anode-layer version a closed-drift ion source. Basic distinction of the developed sources is the extended range of ion energies in high-current beam for optimization of deposition, cleaning and etching processes.

A new and simple ion source for ion beam assisted deposition of thin films

1991 ◽  
Vol 127 (1) ◽  
pp. K19-K23 ◽  
Author(s):  
R. Hübler ◽  
W. H. Schreiner ◽  
I. J. R. Baumvol
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Assisted Deposition

A 16 cm broad‐beam ion source for ion‐beam etching of quartz wafers

1996 ◽  
Vol 67 (3) ◽  
pp. 1009-1011
Author(s):  
Yusheng Rao ◽  
Ming Li ◽  
Bo Qi ◽  
Fei Li
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam

scholarly journals Hermetic Protection of Rings by Ion Beam Sputter Coating with a Broad Beam Ion Source and a W-Shaped Hollow Sputter Target

2013 ◽  
Vol 38 (1) ◽  
pp. 97-100 ◽  
Author(s):  
Wolfgang Ensinger ◽  
Stefan Flege ◽  
Ruriko Hatada ◽  
Sevda Ayata ◽  
Takaomi Matsutani ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Broad Beam ◽  
Sputter Coating

scholarly journals Formation of catalytic and corrosion protective layers with use of ion beam assisted deposition of metals from vacuum arc discharge plasma

2021 ◽  
Vol 2064 (1) ◽  
pp. 012054
Author(s):  
V V Poplavsky ◽  
A V Dorozhko ◽  
V G Matys
Keyword(s):  
Discharge Plasma ◽  
Arc Discharge ◽  
Ion Beam ◽  
Substrate Surface ◽  
Ion Source ◽  
Vacuum Arc ◽  
Corrosion Properties ◽  
Ion Beam Assisted Deposition ◽  
Deposited Metal ◽  
Catalytically Active

Abstract This paper presents a brief overview of our studies on the modification of materials using ion beam assisted deposition (IBAD) of metals from vacuum arc discharge plasma in order to form catalytically active and corrosion-resistant layers on the surface. Deposition of metals on different materials with simultaneous mixing of the deposited layer with the substrate surface by accelerated ions of the deposited metal was carried out in an experimental setup with a pulsed electric arc ion source. Catalytic and corrosion properties of the materials with the obtained layers were studied using electrochemical voltammetric measurements. The microstructure and composition of the resulting layers were studied using the SEM, EDX, WD-XRF, XPS, EBSD, and RBS methods.

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