Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure

2003 ◽  
Vol 83 (15) ◽  
pp. 3162-3164 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Yasuhiro Imai ◽  
Hiroya Ikeda ◽  
Michiharu Tabe
Keyword(s):  
Oxide Layer ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Silicon Islands

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

Optical Characterization of Silicon-On-Insulator

1996 ◽  
Vol 446 ◽  
Author(s):  
G. G. Li ◽  
A. R. Forouhi ◽  
I. Bloomer ◽  
A. Auberton-Herve ◽  
A. Wittkower
Keyword(s):  
Optical Constants ◽  
Crystalline Silicon ◽  
Interface Roughness ◽  
Silicon On Insulator ◽  
Native Oxide ◽  
Buried Oxide ◽  
A New Technique ◽  
Silicon Islands ◽  
Destructive Measurement ◽  
Non Destructive

AbstractA new technique, referred to as the “n&k Method”, is used to characterize the thin films comprising Silicon-on-Insulator (SOI). With the “n&k Method”, a non-destructive robust measurement of the thickness of both the crystalline silicon top-layer and the buried oxide under-layer, the spectra of refractive index (n), and extinction coefficient (k), and the smoothness of the interfaces is established. The “n&k Method” determines these quantities simultaneously and without multiple solutions for thickness. The non-destructive measurement of interface roughness between the buried oxide under-layer and the silicon substrate is associated with the presence of silicon islands. The native oxide that forms on SOI is also detected and measured. No initial user's input for thickness and optical constants are required in order to obtain these results. The spectra of optical constants are measured accurately and reliably.

The Study of the Formation of Thin SOI Structure by SIMOX with Water Plasma

2001 ◽  
Vol 686 ◽  
Author(s):  
Chen Jing ◽  
Chen Meng ◽  
Wang Xiang ◽  
Dong Yemin ◽  
Zheng Zhihong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Mass Analyzer ◽  
Implantation Energy ◽  
Implantation Time ◽  
Depth Profiles ◽  
Buried Oxide ◽  
Ions Implantation ◽  
The Masses ◽  
Silicon Islands ◽  
Induced Defects

AbstractThe biggest drawback of the widely application of SIMOX-SOI material is the low yield and the high cost which mainly due to the long implantation time by conventional beamline implanter. An implanter without an ion mass analyzer is used to fabricate SOI materials by H2O+, HO+, and O+ ions implantation using water plasma. Based on the consideration that the masses of the three ions of are quite close, their depth profiles in as-implanted wafers will not disperse much, which makes it possible for the formation of a single buried oxide layer by choosing the appropriate energy and dose. The results show that it exits a dose window at fixed implantation energy to form desirable thin or ultra-thin SOI structure with the buried oxide layer free of silicon islands. Compared to conventional SIMOX method, the sample implanted at the same dose and energy has thicker BOX layer. This probably caused by the heavy oxygen damaged region with hydrogen-induced defects in as-implanted wafer appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high-temperature annealing process.

Radiation Induced Subsurface Charging in the Buried Oxide Layer in SIMOX

2004 ◽  
Vol 838 ◽  
Author(s):  
M. A. Stevens-Kalceff ◽  
S. Mickle
Keyword(s):  
Electron Beam ◽  
Oxide Layer ◽  
Electric Fields ◽  
Surface Potential ◽  
Silicon On Insulator ◽  
Kelvin Probe ◽  
Kelvin Probe Microscopy ◽  
Buried Oxide ◽  
Experimental Surface ◽  
Radiation Induced

ABSTRACTKelvin Probe Microscopy has been used to characterize the magnitude and spatial distribution of reproducible characteristic residual potential in electron beam irradiated silicon on insulator specimens (SIMOX). Focussed electron beam irradiation produces trapped charge within the insulating buried oxide layer which produces highly localized electric fields. The charging processes are dynamic, localized, and dependent on pre-existing and irradiation induced defect concentrations. The characteristic experimental surface potential distributions are compared with calculated model surface potential distributions. This work demonstrates that proximal probe methods which are usually considered to be surface analysis techniques, can be used to investigate subsurface properties and give insight into subsurface charging processes.

Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation

2002 ◽  
Vol 158-159 ◽  
pp. 180-185
Author(s):  
Xiang Wang ◽  
Meng Chen ◽  
Yemin Dong ◽  
Jing Chen ◽  
Xi Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Oxide Layer ◽  
Low Dose ◽  
Energy Optimization ◽  
Buried Oxide ◽  
Silicon Islands

High Resolution Electron Microscopy of Defects in High-Dose Oxygen Implanted Silicon-On-Insulator Material

1990 ◽  
Vol 183 ◽  
Author(s):  
S. Visitserngtrakul ◽  
C. O. Jung ◽  
B. F. Cordts ◽  
P. Roitman ◽  
S. J. Krause
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Wafer Temperature ◽  
Buried Oxide ◽  
Resolution Electron

AbstractHigh resolution electron microscopy (HREM) has been used to study the atomic arrangement of defects formed during high-dose oxygen implantation of silicon-on-insulator material. The effect of implantation parameters of wafer temperature, dose, and current density were investigated. Wafer temperature had the largest effect on the type and character of the defects. Above the buried oxide layer in the top silicon layer, HREM revealed that microtwins and stacking faults were created during implantation from 350–450°C. From 450–550°C, stacking faults were longer and microtwinning was reduced. From 550–700°C, a new type of defect was observed which had lengths of 40 to 140 nm and consisted of several discontinuous stacking faults which were randomly spaced and separated by two to eight atomic layers. We have referred to them as “multiply faulted defects” (MFDs). Beneath the buried oxide layer in the substrate region, the defects observed included stacking faults and ( 113 ) defects. The results indicated that some parts of the ( 1131 defects can assume a cubic diamond structure created through a twin operation across (115) planes. Details of the structure and formation mechanisms of MFDs and other defects will be discussed.

Fabrication of Device-grade Separation-by-implantation-of-oxygen Materials by Optimizing Dose-energy Match

2002 ◽  
Vol 17 (7) ◽  
pp. 1634-1643 ◽  
Author(s):  
Meng Chen ◽  
Yuehui Yu ◽  
Xi Wang ◽  
Xiang Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon On Insulator ◽  
Optimum Dose ◽  
Cross Sectional ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Good Crystallinity ◽  
Grade Separation ◽  
Silicon Islands

In this article, we report formation of separation-by-implantation-of-oxygen (SIMOX) silicon-on-insulator (SOI) materials with doses ranging from (2.5 to 13.5) × 1017 cm−2 at acceleration energies of 70–160 keV and subsequent annealing at temperatures over 1300 °C in oxygen + argon atmosphere for 5 h. The microstructure evolution of SIMOX wafers was characterized by Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, high-resolution transmission electron microscopy, Secco, and Cu-plating. This study revealed a series of good matches of dose-energy combination at acceleration energies of 70–160 keV with doses of (2.5–5.5) × 1017 cm−2, in which SIMOX wafers had good crystallinity of the top silicon, sharp Si/SiO2 interfaces, high-integrity buried oxide layers with low pinhole density, and low detectable silicon islands. Furthermore, the higher the oxygen dose, the higher the implanted energy required for the formation of a buried oxide free from Si islands. The mechanism of the optimum dose-energy match is discussed.

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