The Study of the Formation of Thin SOI Structure by SIMOX with Water Plasma

2001 ◽  
Vol 686 ◽  
Author(s):  
Chen Jing ◽  
Chen Meng ◽  
Wang Xiang ◽  
Dong Yemin ◽  
Zheng Zhihong ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Mass Analyzer ◽  
Implantation Energy ◽  
Implantation Time ◽  
Depth Profiles ◽  
Buried Oxide ◽  
Ions Implantation ◽  
The Masses ◽  
Silicon Islands ◽  
Induced Defects

AbstractThe biggest drawback of the widely application of SIMOX-SOI material is the low yield and the high cost which mainly due to the long implantation time by conventional beamline implanter. An implanter without an ion mass analyzer is used to fabricate SOI materials by H2O+, HO+, and O+ ions implantation using water plasma. Based on the consideration that the masses of the three ions of are quite close, their depth profiles in as-implanted wafers will not disperse much, which makes it possible for the formation of a single buried oxide layer by choosing the appropriate energy and dose. The results show that it exits a dose window at fixed implantation energy to form desirable thin or ultra-thin SOI structure with the buried oxide layer free of silicon islands. Compared to conventional SIMOX method, the sample implanted at the same dose and energy has thicker BOX layer. This probably caused by the heavy oxygen damaged region with hydrogen-induced defects in as-implanted wafer appears to be the adsorption center for the outside oxygen to diffuse into the silicon during the high-temperature annealing process.

Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure

2003 ◽  
Vol 83 (15) ◽  
pp. 3162-3164 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Yasuhiro Imai ◽  
Hiroya Ikeda ◽  
Michiharu Tabe
Keyword(s):  
Oxide Layer ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Silicon Islands

Formation of silicon islands free buried oxide layer by energy optimization at very low dose ion implantation

2002 ◽  
Vol 158-159 ◽  
pp. 180-185
Author(s):  
Xiang Wang ◽  
Meng Chen ◽  
Yemin Dong ◽  
Jing Chen ◽  
Xi Wang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Oxide Layer ◽  
Low Dose ◽  
Energy Optimization ◽  
Buried Oxide ◽  
Silicon Islands

Formation of Oxide Layers by High Dose Implantation into Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
S.S. Gill ◽  
I. H. Wilson
Keyword(s):  
Oxide Layer ◽  
Single Crystal Silicon ◽  
High Dose ◽  
Surface Oxide Layer ◽  
Crystal Silicon ◽  
Implantation Energy ◽  
Oxygen Ions ◽  
Oxygen Profile ◽  
Dose Levels ◽  
Very High

ABSTRACTSingle crystal silicon was implanted with 80, 120, 160 and 240 keV oxygen ions. Rutherford backscattering (RBS) analysis was used to obtain the implanted oxygen profile and the oxygen to silicon ratio in the implanted layer for doses in the range 1016 to 1.5 × 1018 O2+ cm−2 for room temperature implants. The depth and the thickness of the buried oxide layer has been measured as a function of implantation energy and oxygen dose. Chemical formation of stoichiometric SiO2 was confirmed by infra-red (IR) spectroscopy. Both RBS and IR indicate that once a surface oxide layer is formed for very high dose levels, the layer thickness decreases with increasing implanted dose beyond a critical dose level.

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

2011 ◽  
Vol 26 (9) ◽  
pp. 095005 ◽  
Author(s):  
S E Jamali Mahabadi ◽  
Ali A Orouji ◽  
P Keshavarzi ◽  
Hamid Amini Moghadam
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
Self Heating ◽  
Buried Oxide

Investigation of polarization mechanisms on unibond buried oxide layer

2007 ◽  
Vol 84 (9-10) ◽  
pp. 2129-2132
Author(s):  
V. Tsouti ◽  
G. Papaioannou ◽  
J. Jomaah ◽  
F. Balestra
Keyword(s):  
Oxide Layer ◽  
Buried Oxide

Characterization of Porous Silicon Layers Containing A Buried Oxide Layer

2000 ◽  
pp. 195-204 ◽  
Author(s):  
S. I. Romanov ◽  
A. V. Dvurechenskii ◽  
Yu. I. Yakovlev ◽  
R. Grötzschel ◽  
U. Kreissig ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Buried Oxide

Microspectrophotometric studies of optical waveguide in silicon wafer with buried oxide layer

1994 ◽  
Author(s):  
A. Y. Gasilov ◽  
Alexander N. Magunov ◽  
M. I. Makovijchuk ◽  
Evgenii O. Parshin
Keyword(s):  
Oxide Layer ◽  
Silicon Wafer ◽  
Optical Waveguide ◽  
Buried Oxide
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