Birefringence compensation in silicon-on-insulator planar waveguide demultiplexers using a buried oxide layer

2003 ◽  
Author(s):  
Pavel Cheben ◽  
Dan-Xia Xu ◽  
Siegfried Janz ◽  
Andre Delage ◽  
Dan Dalacu
Keyword(s):  
Oxide Layer ◽  
Planar Waveguide ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Birefringence Compensation

Effect of Annealing on the Structure of Buried SiO2 Layers Formed By Elevated Temperature High Dose Oxygen Implantation

1985 ◽  
Vol 53 ◽  
Author(s):  
S.J. Krause ◽  
C.O. Jung ◽  
S.R. Wilson ◽  
R.P. Lorigan ◽  
M.E. Burnham
Keyword(s):  
Single Crystal ◽  
Oxide Layer ◽  
Elevated Temperatures ◽  
Superficial Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Threading Dislocations ◽  
Heater Temperature ◽  
Buried Oxide ◽  
Structural Differences

ABSTRACTOxygen has been implanted into Si wafers at high doses and elevated temperatures to form a buried SiO2 layer for use in silicon-on-insulator (SOI) structures. Substrate heater temperatures have been varied (300, 400, 450 and 500°C) to determine the effect on the structure of the superficial Si layer through a processing cycle of implantation, annealing, and epitaxial growth. Transmission electron microscopy was used to characterize the structure of the superficial layer. The structure of the samples was examined after implantation, after annealing at 1150°C for 3 hours, and after growth of the epitaxial Si layer. There was a marked effect on the structure of the superficial Si layer due to varying substrate heater temperature during implantation. The single crystal structure of the superficial Si layer was preserved at all implantation temperatures from 300 to 500°C. At the highest heater temperature the superficial Si layer contained larger precipitates and fewer defects than did wafers implanted at lower temperatures. Annealing of the as-implanted wafers significantly reduced structural differences. All wafers had a region of large, amorphous 10 to 50 nm precipitates in the lower two-thirds of the superficial Si layer while in the upper third of the layer there were a few threading dislocations. In wafers implanted at lower temperatures the buried oxide grew at the top surface only. During epitaxial Si growth the buried oxide layer thinned and the precipitate region above and below the oxide layer thickened for all wafers. There were no significant structural differences of the epitaxial Si layer for wafers with different implantation temperatures. The epitaxial layer was high quality single crystal Si and contained a few threading dislocations. Overall, structural differences in the epitaxial Si layer due to differences in implantation temperature were minimal.

Pattern-induced alignment of silicon islands on buried oxide layer of silicon-on-insulator structure

2003 ◽  
Vol 83 (15) ◽  
pp. 3162-3164 ◽  
Author(s):  
Yasuhiko Ishikawa ◽  
Yasuhiro Imai ◽  
Hiroya Ikeda ◽  
Michiharu Tabe
Keyword(s):  
Oxide Layer ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Silicon Islands

Radiation Induced Subsurface Charging in the Buried Oxide Layer in SIMOX

2004 ◽  
Vol 838 ◽  
Author(s):  
M. A. Stevens-Kalceff ◽  
S. Mickle
Keyword(s):  
Electron Beam ◽  
Oxide Layer ◽  
Electric Fields ◽  
Surface Potential ◽  
Silicon On Insulator ◽  
Kelvin Probe ◽  
Kelvin Probe Microscopy ◽  
Buried Oxide ◽  
Experimental Surface ◽  
Radiation Induced

ABSTRACTKelvin Probe Microscopy has been used to characterize the magnitude and spatial distribution of reproducible characteristic residual potential in electron beam irradiated silicon on insulator specimens (SIMOX). Focussed electron beam irradiation produces trapped charge within the insulating buried oxide layer which produces highly localized electric fields. The charging processes are dynamic, localized, and dependent on pre-existing and irradiation induced defect concentrations. The characteristic experimental surface potential distributions are compared with calculated model surface potential distributions. This work demonstrates that proximal probe methods which are usually considered to be surface analysis techniques, can be used to investigate subsurface properties and give insight into subsurface charging processes.

High Resolution Electron Microscopy of Defects in High-Dose Oxygen Implanted Silicon-On-Insulator Material

1990 ◽  
Vol 183 ◽  
Author(s):  
S. Visitserngtrakul ◽  
C. O. Jung ◽  
B. F. Cordts ◽  
P. Roitman ◽  
S. J. Krause
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Oxide Layer ◽  
Stacking Faults ◽  
High Resolution Electron Microscopy ◽  
Silicon On Insulator ◽  
High Dose ◽  
Wafer Temperature ◽  
Buried Oxide ◽  
Resolution Electron

AbstractHigh resolution electron microscopy (HREM) has been used to study the atomic arrangement of defects formed during high-dose oxygen implantation of silicon-on-insulator material. The effect of implantation parameters of wafer temperature, dose, and current density were investigated. Wafer temperature had the largest effect on the type and character of the defects. Above the buried oxide layer in the top silicon layer, HREM revealed that microtwins and stacking faults were created during implantation from 350–450°C. From 450–550°C, stacking faults were longer and microtwinning was reduced. From 550–700°C, a new type of defect was observed which had lengths of 40 to 140 nm and consisted of several discontinuous stacking faults which were randomly spaced and separated by two to eight atomic layers. We have referred to them as “multiply faulted defects” (MFDs). Beneath the buried oxide layer in the substrate region, the defects observed included stacking faults and ( 113 ) defects. The results indicated that some parts of the ( 1131 defects can assume a cubic diamond structure created through a twin operation across (115) planes. Details of the structure and formation mechanisms of MFDs and other defects will be discussed.

The radiation hardness of the nitrogen-fluorine implanted buried oxide layer in silicon-on-insulator materials against higher total dose irradiation

2016 ◽  
Vol 59 (8) ◽  
pp. 657-664 ◽  
Author(s):  
Zhongshan Zheng ◽  
Jin Ning ◽  
Baiqiang Zhang ◽  
Zhongli Liu ◽  
Jiajun Luo ◽  
...  
Keyword(s):  
Total Dose ◽  
Oxide Layer ◽  
Radiation Hardness ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Dose Irradiation

Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the buried oxide layer with ion implantation

2006 ◽  
Vol 15 (4) ◽  
pp. 792-797 ◽  
Author(s):  
Zhang En-Xia ◽  
Qian Cong ◽  
Zhang Zheng-Xuan ◽  
Lin Cheng-Lu ◽  
Wang Xi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Total Dose ◽  
Oxide Layer ◽  
Silicon On Insulator ◽  
Buried Oxide ◽  
Dose Irradiation

Formation of Silicon on Insulator (Soi) With Separation by Plasma Implantation of Oxygen (Spimox)

1994 ◽  
Vol 354 ◽  
Author(s):  
J.B. Liu ◽  
S.S.K. Iyer ◽  
J. Min ◽  
P. Chu ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Silicon On Insulator ◽  
Low Oxygen ◽  
Double Oxide ◽  
Buried Oxide ◽  
Transmission Electron ◽  
Plasma Immersion Ion Implantation ◽  
Post Implantation ◽  
Si Wafer

AbstractBuried oxide layers in Si were fabricated using non-mass analyzed plasma immersion ion implantation (PHI). We call this process of making separation by implantation of oxygen (SIMOX) with implantation by PIII as separation by plasma implantation of oxygen (SPIMOX). The implantation was carried out by applying a large negative bias to a Si wafer immersed in an oxygen plasma and a nominal dose of 2 × 1017 cm”2 of oxygen was obtained in less than three minutes. Cross section transmission electron microscopy (XTEM) and Rutherford backscattering spectrometry (RBS) were used to characterize the wafers. Three distinct modes of microstructure development were observed after post implantation annealing. With a low oxygen dose (< 1 × 1017 cm”2 ), isolated silicon dioxide precipitates did not grow large enough to form a continuous oxide layer. With a high oxygen dose ( > 3 × 1017 cm”2 ), however, a single buried oxide layer was observed. By optimizing the concentration ratio of 0+ and 02+ in the plasma and the implant dose, a double oxide layer (Si/oxide/Si/oxide/Si) structure, was produced in a single implantation step.

Structural changes in silicon-on-insulator material during post-implantation annealing

1986 ◽  
Vol 44 ◽  
pp. 736-737
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
High Speed ◽  
Structural Changes ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Quality ◽  
Radiation Hardened ◽  
Post Implantation ◽  
Very High

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.

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