Cathodoluminescence and Hall-effect measurements in sulfur-doped chemical-vapor-deposited diamond

2003 ◽  
Vol 82 (13) ◽  
pp. 2074-2076 ◽  
Author(s):  
Kazushi Nakazawa ◽  
Minoru Tachiki ◽  
Hiroshi Kawarada ◽  
Aki Kawamura ◽  
Kenji Horiuchi ◽  
...  
Keyword(s):  
Hall Effect ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited ◽  
Hall Effect Measurements

Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

1997 ◽  
Vol 468 ◽  
Author(s):  
W. Götz ◽  
M. D. McCluskey ◽  
N. M. Johnson ◽  
D. P. Bour ◽  
E. E. Haller
Keyword(s):  
Hall Effect ◽  
Absorption Spectra ◽  
Thermal Activation ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Thermally Activated ◽  
Local Vibrational Mode ◽  
Hall Effect Measurements ◽  
Spectroscopic Identification ◽  
Mg Doped

ABSTRACTMg-doped GaN films grown by metalorganic chemical vapor deposition were characterized by variable-temperature Hall-effect measurements and Fourier-transform infrared absorption spectroscopy. As-grown, thermally activated, and deuterated Mg-doped GaN samples were investigated. The existence of Mg-H complexes in GaN is demonstrated with the observation of a local vibrational mode (LVM) at 3125 cm-1 (8 K). At 300 K this absorption line shifts to 3122 cm-1. The intensity of the LVM line is strongest in absorption spectra of as-grown GaN. Mg which is semi-insulating. Upon thermal activation, the intensity of the LVM line significantly decreases and an acceptor concentration of 2×1019cm-3 is derived from the Hall-effect data. After deuteration at 600°C the resistivity of the Mg-doped GaN increased by four orders of magnitude. A LVM line at 2321 cm-1 (8 K) appears in the absorption spectra which is consistent with the isotopie shift of the vibrational frequency when D is substituted for H.

scholarly journals Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

2011 ◽  
Vol 99 (23) ◽  
pp. 232110 ◽  
Author(s):  
Tian Shen ◽  
Wei Wu ◽  
Qingkai Yu ◽  
Curt A. Richter ◽  
Randolph Elmquist ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Chemical Vapor ◽  
Graphene Films ◽  
Chemical Vapor Deposited

Hall Effect Investigation of Doped and Undoped ßB-FESI2

1995 ◽  
Vol 402 ◽  
Author(s):  
S. Brehme ◽  
L. Ivanenko ◽  
Y. Tomm ◽  
G.-U. Reinsperger ◽  
P. Staulß ◽  
...  
Keyword(s):  
Hall Effect ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Preparation Process ◽  
Si Substrates ◽  
Mobility Data ◽  
Undoped Material ◽  
Hall Effect Measurements ◽  
P Type

AbstractPolycrystalline ß-FeSi2 layers prepared by codeposition of Si and Fe on cold and hot Si substrates and ß-FeSi2, crystals grown by chemical vapor transport were investigated. Resistivity and Hall effect measurements revealed the p-type conductivity of undoped material and the influence of some dopants of the iron group. The activation energy of a Cr-related acceptor was determined to about 85 meV. The mobility data were found to depend significantly on the purity of the preparation process.

Interface Effects with Ga0.47In0.53As Layers on InP Substrates Prepared by Organometallic Chemical Vapor Deposition

1982 ◽  
Vol 18 ◽  
Author(s):  
J. S. Whiteley ◽  
S. K. Ghandhi
Keyword(s):  
Chemical Vapor Deposition ◽  
Hall Effect ◽  
Electron Concentration ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hall Effect Measurements ◽  
Inp Substrates ◽  
Lattice Matched ◽  
Interface Effects

Lattice-matched Ga0.47In0.53As was epitaxially grown on InP substrates by the reaction of triethylgallium, triethylindium and arsine. The mobility and carrier concentration in these layers were determined by sequential etch and Hall effect measurements made on the grown layers. These measurements show a considerable fall–off in mobility in the vicinity of the interface, accompanied by a rapid increase in electron concentration. In situ chloride etching of the substrate, prior to Ga–In–As growth, is shown to reduce significantly but not eliminate these interface effects. In this paper we outline possible reasons for these effects, based on measurements made on films grown with and without substrate etching and also on measurements of the effect of etching on the substrate itself.

scholarly journals Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

2010 ◽  
Vol 96 (12) ◽  
pp. 122106 ◽  
Author(s):  
Helin Cao ◽  
Qingkai Yu ◽  
L. A. Jauregui ◽  
J. Tian ◽  
W. Wu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electronic Transport ◽  
Quantum Hall ◽  
Weak Localization ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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