scholarly journals Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

2011 ◽  
Vol 99 (23) ◽  
pp. 232110 ◽  
Author(s):  
Tian Shen ◽  
Wei Wu ◽  
Qingkai Yu ◽  
Curt A. Richter ◽  
Randolph Elmquist ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Chemical Vapor ◽  
Graphene Films ◽  
Chemical Vapor Deposited

scholarly journals Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

2010 ◽  
Vol 96 (12) ◽  
pp. 122106 ◽  
Author(s):  
Helin Cao ◽  
Qingkai Yu ◽  
L. A. Jauregui ◽  
J. Tian ◽  
W. Wu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electronic Transport ◽  
Quantum Hall ◽  
Weak Localization ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

2010 ◽  
Vol 97 (25) ◽  
pp. 252101 ◽  
Author(s):  
Wei Pan ◽  
Stephen W. Howell ◽  
Anthony Joseph Ross ◽  
Taisuke Ohta ◽  
Thomas A. Friedmann
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Epitaxial Graphene ◽  
High Quality ◽  
Wafer Scale ◽  
Integer Quantum Hall Effect ◽  
Graphene Films ◽  
Integer Quantum

scholarly journals Quantum Hall Effect across Graphene Grain Boundary

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 8
Author(s):  
Tuan Khanh Chau ◽  
Dongseok Suh ◽  
Haeyong Kang
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Chemical Vapor ◽  
Hall Resistance ◽  
Monolayer Graphene ◽  
Cvd Graphene ◽  
Carrier Scattering ◽  
Longitudinal Resistance ◽  
Charge Carrier Scattering

Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.

Localization and many-body interactions in the quantum Hall effect determined by polarized optical emission

1991 ◽  
Vol 44 (8) ◽  
pp. 4006-4009 ◽  
Author(s):  
B. B. Goldberg ◽  
D. Heiman ◽  
M. Dahl ◽  
A. Pinczuk ◽  
L. Pfeiffer ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Optical Emission ◽  
Many Body ◽  
Many Body Interactions

Quantum Hall effect in a saddle-point system

1998 ◽  
Vol 2 (1-4) ◽  
pp. 523-526
Author(s):  
M.V Budantsev ◽  
Z.D Kvon ◽  
A.G Pogosov ◽  
E.B Olshanetskii ◽  
D.K Maude ◽  
...  
Keyword(s):  
Saddle Point ◽  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Point System ◽  
Saddle Point System
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