Spectroscopic Identification of the Acceptor-Hydrogen Complex in Mg-Doped GaN Grown by MOCVD

1997 ◽  
Vol 468 ◽  
Author(s):  
W. Götz ◽  
M. D. McCluskey ◽  
N. M. Johnson ◽  
D. P. Bour ◽  
E. E. Haller
Keyword(s):  
Hall Effect ◽  
Absorption Spectra ◽  
Thermal Activation ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Thermally Activated ◽  
Local Vibrational Mode ◽  
Hall Effect Measurements ◽  
Spectroscopic Identification ◽  
Mg Doped

ABSTRACTMg-doped GaN films grown by metalorganic chemical vapor deposition were characterized by variable-temperature Hall-effect measurements and Fourier-transform infrared absorption spectroscopy. As-grown, thermally activated, and deuterated Mg-doped GaN samples were investigated. The existence of Mg-H complexes in GaN is demonstrated with the observation of a local vibrational mode (LVM) at 3125 cm-1 (8 K). At 300 K this absorption line shifts to 3122 cm-1. The intensity of the LVM line is strongest in absorption spectra of as-grown GaN. Mg which is semi-insulating. Upon thermal activation, the intensity of the LVM line significantly decreases and an acceptor concentration of 2×1019cm-3 is derived from the Hall-effect data. After deuteration at 600°C the resistivity of the Mg-doped GaN increased by four orders of magnitude. A LVM line at 2321 cm-1 (8 K) appears in the absorption spectra which is consistent with the isotopie shift of the vibrational frequency when D is substituted for H.

Activation of Acceptors in Mg-Doped, p-Type GaN

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Götz ◽  
N. M. Johnson ◽  
J. Walker ◽  
D. P. Bour
Keyword(s):  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Metalorganic Chemical Vapor Deposition ◽  
Variable Temperature ◽  
Chemical Vapor ◽  
Hall Effect Measurements ◽  
P Type ◽  
Heteroepitaxial Layers ◽  
Plasma Hydrogenation ◽  
Mg Doped

AbstractThe activation of acceptors was investigated for Mg-doped, heteroepitaxial layers of GaN grown by metalorganic chemical vapor deposition. After growth the samples were exposed to isochronal rapid thermal anneals in the temperature range from 500°C to 775°C. The samples were studied by variable temperature Hall effect measurements and photoluminescence (PL) spectroscopy in the as-grown condition and after each temperature step. The thermal treatment leads to the formation of acceptors which are characterized by an activation energy for ionization in the range between 165 meV and 182 meV. These acceptors are attributed to Mg atoms substituting for Ga in the GaN lattice. The experimental results for the acceptor activation are consistent with the dissociation of electrically inactive acceptor-hydrogen complexes. The reversibility of this process is investigated by the exposure of the activated, p-type GaN samples to atomic hydrogen in a remote-plasma hydrogenation system at 600°C and reactivating at 850°C.

Electrical properties of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5

2001 ◽  
Vol 680 ◽  
Author(s):  
M. Ahoujja ◽  
Y. K. Yeo ◽  
R. L. Hengehold ◽  
J. E. Van Nostrand
Keyword(s):  
Electrical Properties ◽  
Hall Effect ◽  
Mole Fraction ◽  
Molecular Beam ◽  
Variable Temperature ◽  
Type Region ◽  
Si Doping ◽  
Gas Source ◽  
Hall Effect Measurements ◽  
Si Doped

ABSTRACTHall-effect measurements were conducted on Si-doped AlxGa1−xN films grown on sapphire substrate by gas source molecular beam epitaxy. The Al mole fraction in the 1 [.proportional]m thick AlxGa1−xN was 0.0, 0.3, and 0.5, and the Si doping concentration was kept at a nominal value of 1018 cm−3. Variable temperature Hall-effect measurements reveal a presence of a highly degenerate n-type region at the AlxGa1−xN /sapphire interface. This degenerate interfacial layer dominates the electrical properties below 30 K and significantly affects the properties of the AlxGa1−xN layer. Thus, by using a two-layer conducting model, the carrier concentration and mobility of the AlxGa1−xN layer alone are obtained.

Hall Effect Investigation of Doped and Undoped ßB-FESI2

1995 ◽  
Vol 402 ◽  
Author(s):  
S. Brehme ◽  
L. Ivanenko ◽  
Y. Tomm ◽  
G.-U. Reinsperger ◽  
P. Staulß ◽  
...  
Keyword(s):  
Hall Effect ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Preparation Process ◽  
Si Substrates ◽  
Mobility Data ◽  
Undoped Material ◽  
Hall Effect Measurements ◽  
P Type

AbstractPolycrystalline ß-FeSi2 layers prepared by codeposition of Si and Fe on cold and hot Si substrates and ß-FeSi2, crystals grown by chemical vapor transport were investigated. Resistivity and Hall effect measurements revealed the p-type conductivity of undoped material and the influence of some dopants of the iron group. The activation energy of a Cr-related acceptor was determined to about 85 meV. The mobility data were found to depend significantly on the purity of the preparation process.

Photoluminescence, Capacitance-Voltage, and Variable Field Hall Effect Measurements of Mg-Doped InN

2006 ◽  
Vol 955 ◽  
Author(s):  
Craig Hartley Swartz ◽  
Steven M. Durbin ◽  
Roger J. Reeves ◽  
Katherine Prince ◽  
John V. Kennedy ◽  
...  
Keyword(s):  
Hall Effect ◽  
Molecular Beam ◽  
Variable Magnetic Field ◽  
Surface Electron ◽  
Type Layer ◽  
Capacitance Voltage ◽  
Hall Effect Measurements ◽  
P Type ◽  
Lattice Matched ◽  
Mg Doped

ABSTRACTVariable magnetic field Hall effect, photoluminescence (PL) and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. The use of lattice-matched Yttria-stablized Zirconia substrates also provides evidence of a p-type layer.

Interface Effects with Ga0.47In0.53As Layers on InP Substrates Prepared by Organometallic Chemical Vapor Deposition

1982 ◽  
Vol 18 ◽  
Author(s):  
J. S. Whiteley ◽  
S. K. Ghandhi
Keyword(s):  
Chemical Vapor Deposition ◽  
Hall Effect ◽  
Electron Concentration ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hall Effect Measurements ◽  
Inp Substrates ◽  
Lattice Matched ◽  
Interface Effects

Lattice-matched Ga0.47In0.53As was epitaxially grown on InP substrates by the reaction of triethylgallium, triethylindium and arsine. The mobility and carrier concentration in these layers were determined by sequential etch and Hall effect measurements made on the grown layers. These measurements show a considerable fall–off in mobility in the vicinity of the interface, accompanied by a rapid increase in electron concentration. In situ chloride etching of the substrate, prior to Ga–In–As growth, is shown to reduce significantly but not eliminate these interface effects. In this paper we outline possible reasons for these effects, based on measurements made on films grown with and without substrate etching and also on measurements of the effect of etching on the substrate itself.

Thermally activated double-carrier transport in epitaxial graphene on vanadium-compensated 6H-SiC as revealed by Hall effect measurements

Carbon ◽  
2018 ◽  
Vol 139 ◽  
pp. 776-781 ◽  
Author(s):  
Tymoteusz Ciuk ◽  
Andrzej Kozlowski ◽  
Pawel Piotr Michalowski ◽  
Wawrzyniec Kaszub ◽  
Michal Kozubal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Carrier Transport ◽  
Epitaxial Graphene ◽  
Thermally Activated ◽  
Hall Effect Measurements

Thickness Dependence of Electronic Properties of GaN Epi-layers

1996 ◽  
Vol 449 ◽  
Author(s):  
W. Götz ◽  
J. Walker ◽  
L.T. Romano ◽  
N.M. Johnson ◽  
R.J. Molnar
Keyword(s):  
Hall Effect ◽  
Electronic Properties ◽  
Deep Level ◽  
Variable Temperature ◽  
Hall Effect Measurement ◽  
Interface Layer ◽  
Hydride Vapor Phase Epitaxy ◽  
Conduction Path ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy

ABSTRACTThe electronic properties of heteroepitaxial GaN were investigated for unintentionally doped, n-type films grown by hydride vapor phase epitaxy on sapphire substrates. The GaN layers were characterized by variable temperature Hall-effect measurement, capacitance-voltage (C-V) measurements, and deep level transient spectroscopy (DLTS). The measurements were performed on as-grown, 13 μn thick films and repeated after thinning by mechanical polishing to 7 μm and 1.2 μm. The room temperature electron concentrations as determined by the Hall-effect measurements were found to increase from ∼1017 cm−3 (13 μm) to ∼1020 cm−3 (1.2 μm) with decreasing film thickness. However, the C-V and DLTS measurements revealed that the ionized, effective donor and deep level concentrations, respectively, remained unchanged in regions close to the top surface of the films. These findings are consistent with the presence of a thin, highly conductive near interface layer which acts as a parasitic, parallel conduction path. Possible sources of such a shunt near the GaN/sapphire interface include oxygen contamination from the sapphire substrate or a structurally highly defective, 300 nm thick interface layer.

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