Hall Effect Investigation of Doped and Undoped ßB-FESI2

1995 ◽  
Vol 402 ◽  
Author(s):  
S. Brehme ◽  
L. Ivanenko ◽  
Y. Tomm ◽  
G.-U. Reinsperger ◽  
P. Staulß ◽  
...  
Keyword(s):  
Hall Effect ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Preparation Process ◽  
Si Substrates ◽  
Mobility Data ◽  
Undoped Material ◽  
Hall Effect Measurements ◽  
P Type

AbstractPolycrystalline ß-FeSi2 layers prepared by codeposition of Si and Fe on cold and hot Si substrates and ß-FeSi2, crystals grown by chemical vapor transport were investigated. Resistivity and Hall effect measurements revealed the p-type conductivity of undoped material and the influence of some dopants of the iron group. The activation energy of a Cr-related acceptor was determined to about 85 meV. The mobility data were found to depend significantly on the purity of the preparation process.

Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

2006 ◽  
Vol 527-529 ◽  
pp. 633-636 ◽  
Author(s):  
Sylvie Contreras ◽  
Marcin Zielinski ◽  
Leszek Konczewicz ◽  
Caroline Blanc ◽  
Sandrine Juillaguet ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Hall Effect ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Temperature Dependent ◽  
Large N ◽  
Hall Effect Measurements ◽  
Van Der Pauw ◽  
P Type ◽  
Made In

We report on investigation of p-type doped, SiC wafers grown by the Modified- Physical Vapor Transport (M-PVT) method. SIMS measurements give Al concentrations in the range 1018 to 1020 cm-3, with weak Ti concentration but large N compensation. To measure the wafers’ resistivity, carrier concentration and mobility, temperature-dependant Hall effect measurements have been made in the range 100-850 K using the Van der Pauw method. The temperature dependence of the mobility suggests higher Al concentration, and higher compensation, than estimated from SIMS. Additional LTPL measurements show no evidence of additional impurities in the range of investigation, but suggest that the additional compensation may come from an increased concentration of non-radiative centers.

Multiple Donors in Zinc Oxide Substrates

2002 ◽  
Vol 719 ◽  
Author(s):  
K. Thonke ◽  
N. Kerwien ◽  
A. Wysmolek ◽  
M. Potemski ◽  
A. Waag ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Oxide Substrates ◽  
Multiple Donors ◽  
Major Donors ◽  
Available Zinc ◽  
Transport Technique

AbstractWe investigate by photoluminescence (PL) nominally undoped, commercially available Zinc Oxide substrates (from Eagle Picher) grown by seeded chemical vapor transport technique in order to identify residual donors and acceptors. In low temperature PL spectra the dominant emission comes from the decay of bound exciton lines at around 3.36 eV. Zeeman measurements allow the identification of the two strongest lines and some weaker lines in-between as donorrelated. From the associated two-electron satellite lines binding energies of the major donors of 48 meV and 55 meV, respectively, can be deduced.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Evolution of reduction process from tungsten oxide to ultrafine tungsten powder via hydrogen

2021 ◽  
Vol 40 (1) ◽  
pp. 171-177
Author(s):  
Yue Wang ◽  
Ben Fu Long ◽  
Chun Yu Liu ◽  
Gao An Lin
Keyword(s):  
Surface Morphology ◽  
Tungsten Oxide ◽  
Tungsten Powder ◽  
Reduction Process ◽  
Chemical Vapor ◽  
Transition Process ◽  
Vapor Transport ◽  
Fibrous Structure ◽  
Chemical Vapor Transport ◽  
Oxide Particles

Abstract Herein, the evolution of reduction process of ultrafine tungsten powder in industrial conditions was investigated. The transition process of morphology and composition was examined via SEM, XRD, and calcination experiments. The results show that the reduction sequence of WO2.9 was WO2.9 → WO2.72 → WO2 → W on the surface, but WO2.9 → WO2 → W inside the oxide particles. With the aid of chemical vapor transport of WO x (OH) y , surface morphology transformed into rod-like, star-shaped cracking, floret, irregularly fibrous structure, and finally, spherical tungsten particles.

In situ formation of highly exposed NiPS3 nanosheets on nickel foam as an efficient 3D electrocatalyst for overall water splitting

2021 ◽  
Author(s):  
Liang Fang ◽  
Yanping Xie ◽  
Peiyin Guo ◽  
Jingpei Zhu ◽  
Shuhui Xiao ◽  
...  
Keyword(s):  
Water Splitting ◽  
Nickel Foam ◽  
Chemical Vapor ◽  
Bifunctional Catalyst ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Overall Water Splitting ◽  
One Step ◽  
Transport Method

Vertical NiPS3 nanosheets in situ grown on conducting nickel foam were fabricated by a facile one-step chemical vapor transport method and used as an efficient bifunctional catalyst for overall water splitting.

Chemical Vapor Transport of Ternary Indium Molybdates.

ChemInform ◽  
2005 ◽  
Vol 36 (44) ◽  
Author(s):  
Udo Steiner ◽  
Werner Reichelt
Keyword(s):  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport
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