Erratum “Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization” [Appl. Phys. Lett. 96, 122106 (2010)]

2010 ◽  
Vol 96 (25) ◽  
pp. 259901 ◽  
Author(s):  
Helin Cao ◽  
Qingkai Yu ◽  
L. A. Jauregui ◽  
J. Tian ◽  
W. Wu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electronic Transport ◽  
Quantum Hall ◽  
Weak Localization ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Electronic transport in chemical vapor deposited graphene synthesized on Cu: Quantum Hall effect and weak localization

2010 ◽  
Vol 96 (12) ◽  
pp. 122106 ◽  
Author(s):  
Helin Cao ◽  
Qingkai Yu ◽  
L. A. Jauregui ◽  
J. Tian ◽  
W. Wu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electronic Transport ◽  
Quantum Hall ◽  
Weak Localization ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

2011 ◽  
Vol 99 (23) ◽  
pp. 232110 ◽  
Author(s):  
Tian Shen ◽  
Wei Wu ◽  
Qingkai Yu ◽  
Curt A. Richter ◽  
Randolph Elmquist ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Chemical Vapor ◽  
Graphene Films ◽  
Chemical Vapor Deposited

Observation of Quantum Hall Effect and weak localization in p-type bilayer epitaxial graphene on SiC(0001)

2013 ◽  
Vol 175-176 ◽  
pp. 119-122 ◽  
Author(s):  
Cui Yu ◽  
Jia Li ◽  
Kuanghong Gao ◽  
Tie Lin ◽  
Qingbin Liu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Weak Localization ◽  
Epitaxial Graphene ◽  
P Type

Weak Localization and the Integer Quantum Hall Effect

1988 ◽  
Vol 5 (2) ◽  
pp. 163-168 ◽  
Author(s):  
J. T Chalker ◽  
P Carra ◽  
K. A Benedict
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Weak Localization ◽  
Integer Quantum Hall Effect ◽  
Integer Quantum

scholarly journals Quantum Hall Effect across Graphene Grain Boundary

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 8
Author(s):  
Tuan Khanh Chau ◽  
Dongseok Suh ◽  
Haeyong Kang
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Chemical Vapor ◽  
Hall Resistance ◽  
Monolayer Graphene ◽  
Cvd Graphene ◽  
Carrier Scattering ◽  
Longitudinal Resistance ◽  
Charge Carrier Scattering

Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD) graphene reduces the carrier mobility and degrades the performance of the graphene device, which is expected to affect the quantum Hall effect (QHE). This study investigated the influence of individual GBs on the QH state at different stitching angles of the GB in a monolayer CVD graphene. The measured voltage probes of the equipotential line in the QH state showed that the longitudinal resistance (Rxx) was affected by the scattering of the GB only in the low carrier concentration region, and the standard QHE of a monolayer graphene was observed regardless of the stitching angle of the GB. In addition, a controlled device with an added metal bar placed in the middle of the Hall bar configuration was introduced. Despite the fact that the equipotential lines in the controlled device were broken by the additional metal bar, only the Rxx was affected by nonzero resistance, whereas the Hall resistance (Rxy) revealed the well-quantized plateaus in the QH state. Thus, our study clarifies the effect of individual GBs on the QH states of graphenes.

scholarly journals Electronic Transport and Quantum Hall Effect in Bipolar Graphenep−n−pJunctions

2007 ◽  
Vol 99 (16) ◽  
Author(s):  
Barbaros Özyilmaz ◽  
Pablo Jarillo-Herrero ◽  
Dmitri Efetov ◽  
Dmitry A. Abanin ◽  
Leonid S. Levitov ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electronic Transport ◽  
Quantum Hall
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