High-quality SiO2 film formation by highly concentrated ozone gas at below 600 °C

2002 ◽  
Vol 81 (12) ◽  
pp. 2190-2192 ◽  
Author(s):  
Tetsuya Nishiguchi ◽  
Hidehiko Nonaka ◽  
Shingo Ichimura ◽  
Yoshiki Morikawa ◽  
Mitsuru Kekura ◽  
...  
RSC Advances ◽  
2016 ◽  
Vol 6 (97) ◽  
pp. 94905-94910 ◽  
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Annop Klamchuen ◽  
Sukittaya Jessadaluk ◽  
Apirak Pankiew ◽  
...  

Herein, we demonstrate a powerful technique, known as reactive gas-timing (RGT) rf magnetron sputtering, to fabricate high quality Zn3N2 thin films at room temperature without applying any additional energy sources.


2016 ◽  
Vol E99.C (5) ◽  
pp. 535-540 ◽  
Author(s):  
Yasutaka MAEDA ◽  
Shun-ichiro OHMI ◽  
Tetsuya GOTO ◽  
Tadahiro OHMI
Keyword(s):  

2001 ◽  
Vol 697 ◽  
Author(s):  
Noriaki Toyoda ◽  
Kenichi Shirai ◽  
Mititaka Terasawa ◽  
Shinji Matsui ◽  
Isao Yamada

AbstractHigh-quality Ta2O5/SiO2 were deposited with oxygen gas cluster ion assisted deposition at low-temperature for advanced optical filters. With gas cluster ion assisted deposition, high refractive index and very smooth surface of Ta2O5 films were realized. The optimum cluster ion energy and cluster ion current density for Ta2O5 films were found to be 7keV and 0.5μA/cm2, respectively. The structure of film was very uniform and no porous or columnar structures were observed. The surface or interfaces of Ta2O5/SiO2 films were also very flat by surface smoothing effect of cluster ion beams. Very smooth surface can be realized even though the bottom surface was rough. There was no significant wavelength shift after an environmental test, which indicates that dense oxide films were formed at low-temperature with O2 cluster ion assisted deposition.


1985 ◽  
Author(s):  
Eiichi Murakami ◽  
Shin-ichiro Kimura ◽  
Terunori Warabisako ◽  
Kiyoshi Miyake ◽  
Hideo Sunami

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Kejun Liao ◽  
Chengbo Li ◽  
Lisha Xie ◽  
Yuan Yuan ◽  
Shurong Wang ◽  
...  

AbstractOrganic–inorganic metal halide perovskite solar cells (PSCs) have recently been considered as one of the most competitive contenders to commercial silicon solar cells in the photovoltaic field. The deposition process of a perovskite film is one of the most critical factors affecting the quality of the film formation and the photovoltaic performance. A hot-casting technique has been widely implemented to deposit high-quality perovskite films with large grain size, uniform thickness, and preferred crystalline orientation. In this review, we first review the classical nucleation and crystal growth theory and discuss those factors affecting the hot-casted perovskite film formation. Meanwhile, the effects of the deposition parameters such as temperature, thermal annealing, precursor chemistry, and atmosphere on the preparation of high-quality perovskite films and high-efficiency PSC devices are comprehensively discussed. The excellent stability of hot-casted perovskite films and integration with scalable deposition technology are conducive to the commercialization of PSCs. Finally, some open questions and future perspectives on the maturity of this technology toward the upscaling deposition of perovskite film for related optoelectronic devices are presented.


Author(s):  
A. Shuhara ◽  
N. Ohmori ◽  
T. Takayama ◽  
M. Ohmine ◽  
K. Oka ◽  
...  
Keyword(s):  

2007 ◽  
Vol 47 (4-5) ◽  
pp. 786-789
Author(s):  
Koutarou Tanaka ◽  
Hiroaki Tanaka ◽  
Akinobu Teramoto ◽  
Shigetoshi Sugawa ◽  
Tadahiro Ohmi

2002 ◽  
pp. 135-140
Author(s):  
Chihiro MOCHIZUKI ◽  
Mitsunobu SATO ◽  
Isao NAKAMURA ◽  
Tomohiro MATSUBARA ◽  
Takeshi YOSHIDA ◽  
...  

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