High quality gate insulator film formation on SiC using by microwave-excited high-density plasma

2007 ◽  
Vol 47 (4-5) ◽  
pp. 786-789
Author(s):  
Koutarou Tanaka ◽  
Hiroaki Tanaka ◽  
Akinobu Teramoto ◽  
Shigetoshi Sugawa ◽  
Tadahiro Ohmi
Keyword(s):  
Film Formation ◽  
High Density ◽  
Gate Insulator ◽  
High Quality ◽  
Insulator Film ◽  
Density Plasma

Improved Transconductance and Gate Insulator Integrity of MISFETs with Si3N4 Gate Dielectric Fabricated by Microwave-Excited High-Density Plasma at 400℃

2001 ◽  
Author(s):  
Ichiro Ohshima ◽  
Hiroyuki Shimada ◽  
Shin-ichi Nakao ◽  
Weitao Cheng ◽  
Yasuhiro Ono ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
High Density ◽  
Gate Insulator ◽  
Density Plasma

High-quality ultrathin chemical-vapor-deposited Ta2O5 capacitors prepared by high-density plasma annealing

2004 ◽  
Vol 106 (3) ◽  
pp. 234-241 ◽  
Author(s):  
C.H Liu ◽  
S.J Chang ◽  
J.F Chen ◽  
S.C Chen ◽  
J.S Lee ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
High Density ◽  
High Quality ◽  
Chemical Vapor Deposited ◽  
Plasma Annealing ◽  
Density Plasma

High Density Plasma Processing of Microcrystalline Si Thin Films

2005 ◽  
Vol 862 ◽  
Author(s):  
P. C. Joshi ◽  
A. T. Voutsas ◽  
J. W. Hartzell
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Volume Fraction ◽  
Average Crystallite Size ◽  
High Density ◽  
High Quality ◽  
Low Temperature Processing ◽  
Interfacial Characteristics ◽  
Ratio Range ◽  
Density Plasma

AbstractIn the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 20-100. For a 150-nm-thick film deposited at a H2/SiH4 ratio of 20, the typical microcrystalline volume fraction and the average crystallite size corresponding to <111> orientation were 75% and 160 Å, respectively. The observed growth and properties of the μ-Si thin films show the potential of the high-density PECVD technique for the low temperature processing of high quality films with superior control of bulk and interfacial characteristics.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

The basis of quality of sheep pelts and fur products is morphological features of the skin of sheep

2020 ◽  
pp. 50-57
Author(s):  
I. Dmitrik ◽  
G. Zavgorodnyaya
Keyword(s):  
Mechanical Strength ◽  
Breaking Load ◽  
Hair Follicles ◽  
Morphological Features ◽  
High Density ◽  
Fat Cells ◽  
High Quality ◽  
Histological Features ◽  
Weakened Zone

The morphological and histological features of the skin and wool cover of sheep as the basis for the quality of fur sheep pelts have been studied. The most important properties of sheep pelts (uniformity, thinness and density of wool) are provide the possibility of producing high-quality fur semi-finished products from them. However, the features of the histostructure of fine-wool sheep determine the low mechanical strength of the “facial” layer of skin. As a result, the “front” layer during processing often cracks to the upper border of the reticular layer or even peels off from the latter, making the sheep pelt unsuitable for use on fur products. These defects in fur practice are called “cracking” and “peeling” of the facial layer. They are mainly peculiar to sheep pelts of fine-wooled sheep. In these animals due to the high density and tone of the coat, the roots and hair follicles, root vaginas, secretory departments, excretory ducts of the glands and other structures occupy a significant share of the volume in the thickness of the Pilar layer (up to 25–30 %). The share of fibrous structures remains less volume, and these structures themselves are relatively weakly developed, located loosely and loosely intertwined with each other. The accumulations of fat cells that occur here also cannot be attributed to skin-strengthening elements. In fine-fleece sheep the pilar layer is on average 60 % of the thickness of the dermis. Therefore, more than half of its thickness is a weakened zone. The strength of the “front” layer is not the same in different fine-wool breeds of sheep and in different animals within the breed. For example, the average breaking load for cod of the “front” layer in Soviet Merino pelts is 1,25 kg, and in Precoce is 2,49 kg.

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