SiO2 film formation by CO2 laser PVD with O2 feeding

Author(s):  
A. Shuhara ◽  
N. Ohmori ◽  
T. Takayama ◽  
M. Ohmine ◽  
K. Oka ◽  
...  
Keyword(s):  
2002 ◽  
Vol 81 (12) ◽  
pp. 2190-2192 ◽  
Author(s):  
Tetsuya Nishiguchi ◽  
Hidehiko Nonaka ◽  
Shingo Ichimura ◽  
Yoshiki Morikawa ◽  
Mitsuru Kekura ◽  
...  

1985 ◽  
Author(s):  
Eiichi Murakami ◽  
Shin-ichiro Kimura ◽  
Terunori Warabisako ◽  
Kiyoshi Miyake ◽  
Hideo Sunami

2002 ◽  
pp. 135-140
Author(s):  
Chihiro MOCHIZUKI ◽  
Mitsunobu SATO ◽  
Isao NAKAMURA ◽  
Tomohiro MATSUBARA ◽  
Takeshi YOSHIDA ◽  
...  

1993 ◽  
Vol 140 (8) ◽  
pp. 2410-2414 ◽  
Author(s):  
Tetsuya Homma ◽  
Takuya Katoh ◽  
Yoshiaki Yamada ◽  
Yukinobu Murao

1999 ◽  
Vol 567 ◽  
Author(s):  
Kunihiko Koike ◽  
Goichi Inoue ◽  
Shingo Ichimura ◽  
Ken Nakamura ◽  
Akira Kurokawa ◽  
...  

ABSTRACTA high-concentration ozone generator operating at atmospheric pressure has been developed for fabrication of ultra thin silicon oxide films. The generator can supply atmospheric pressure of ozone jet with ozone concentration up to 80 vol%. The ozone jet is generated by desorbing ozone at nearbyn room temperature, which has been condensed on silica-gel by passing ozone/oxygen mixture gas from a commercial ozonizer at a low temperature (<-50°C); at the temperature ozone is more selectively adsorbed on silica-gel than oxygen. The high purity ozone jet with a concentration of 25 vol% at a pressure of 1 × 105 Pa had so large oxidation power that SiO2 film as thick as 3.3 nm grew on a Si surface after 60 min exposure at 375°C. The density of the film was equivalent to that of the film formed by a conventional thermal oxidation process, judging from etching rate with dilute HF solution.


Author(s):  
Makoto Shiojiri ◽  
Toshiyuki Isshiki ◽  
Tetsuya Fudaba ◽  
Yoshihiro Hirota

In hexagonal Se crystal each atom is covalently bound to two others to form an endless spiral chain, and in Sb crystal each atom to three others to form an extended puckered sheet. Such chains and sheets may be regarded as one- and two- dimensional molecules, respectively. In this paper we investigate the structures in amorphous state of these elements and the crystallization.HRTEM and ED images of vacuum-deposited amorphous Se and Sb films were taken with a JEM-200CX electron microscope (Cs=1.2 mm). The structure models of amorphous films were constructed on a computer by Monte Carlo method. Generated atoms were subsequently deposited on a space of 2 nm×2 nm as they fulfiled the binding condition, to form a film 5 nm thick (Fig. 1a-1c). An improvement on a previous computer program has been made as to realize the actual film formation. Radial distribution fuction (RDF) curves, ED intensities and HRTEM images for the constructed structure models were calculated, and compared with the observed ones.


Sign in / Sign up

Export Citation Format

Share Document