Crucial role of reactive pulse-gas on a sputtered Zn3N2 thin film formation

RSC Advances ◽  
2016 ◽  
Vol 6 (97) ◽  
pp. 94905-94910 ◽  
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Annop Klamchuen ◽  
Sukittaya Jessadaluk ◽  
Apirak Pankiew ◽  
...  
Keyword(s):  
Room Temperature ◽  
Film Formation ◽  
Rf Magnetron Sputtering ◽  
Energy Sources ◽  
High Quality ◽  
Additional Energy ◽  
Thin Film Formation ◽  
Reactive Pulse ◽  
Reactive Gas

Herein, we demonstrate a powerful technique, known as reactive gas-timing (RGT) rf magnetron sputtering, to fabricate high quality Zn3N2 thin films at room temperature without applying any additional energy sources.

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Amorphous Silicon Carbide Film Formation at Room Temperature by Monomethylsilane Gas

2013 ◽  
Vol 740-742 ◽  
pp. 235-238
Author(s):  
Hitoshi Habuka ◽  
Masaki Tsuji ◽  
Yusuke Ando
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Film Formation ◽  
Argon Plasma ◽  
Chemical Vapor ◽  
Amorphous Silicon Carbide ◽  
Silicon Carbide Film ◽  
Silicon Carbon ◽  
Thin Film Formation

The silicon carbide thin film formation process, completely performed at room temperature, was developed by argon plasma and a chemical vapor deposition using monomethylsilane gas. Silicon-carbon bonds were found to exist in the obtained film, the surface of which could remain specular after exposure to hydrogen chloride gas at 800 oC. The silicon dangling bonds formed at the silicon surface by the argon plasma are considered to react with the monomethylsilane molecules at room temperature to produce the amorphous silicon carbide film.

Role of kinetic energy of sputtered particles in thin film formation

1997 ◽  
Vol 386 (1-3) ◽  
pp. 231-240 ◽  
Author(s):  
Yasunori Taga ◽  
Riichi Takahasi
Keyword(s):  
Thin Film ◽  
Kinetic Energy ◽  
Film Formation ◽  
Thin Film Formation

Texture orientation of silver thin films grown via gas-timing radio frequency magnetron sputtering and their SERS activity

RSC Advances ◽  
2016 ◽  
Vol 6 (9) ◽  
pp. 7661-7667 ◽  
Author(s):  
Pongbordin Ukahapunyakul ◽  
Nurak Gridsadanurak ◽  
Chaweewan Sapcharoenkun ◽  
Alongkot Treetong ◽  
Panita Kasamechonchung ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Energy Sources ◽  
Special Technique ◽  
Radio Frequency Magnetron Sputtering ◽  
Additional Energy ◽  
Texture Orientation ◽  
Silver Thin Films

Here we have demonstrated the special technique so called gas-timing (GT) rf magnetron sputtering which allow us to control a texture orientation of Ag thin films without applying any additional energy sources.

Phosphine-free engineering toward the synthesis of metal telluride nanocrystals: the role of a Te precursor coordinated at room temperature

Nanoscale ◽  
2018 ◽  
Vol 10 (46) ◽  
pp. 21928-21935 ◽  
Author(s):  
Min Wu ◽  
Yixuan Wang ◽  
Hongyu Wang ◽  
Hao Wang ◽  
Yongming Sui ◽  
...  
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
High Quality ◽  
Application Prospects ◽  
Quality Metal

We developed a new phosphine-free strategy for fabricating high-quality metal telluride nanocrystals (NCs) by using a highly reactive Te precursor coordinated at room temperature. These metal telluride NCs with good optical properties possess excellent application prospects.

scholarly journals Tribological Properties of Ionic Liquids

2020 ◽  
Author(s):  
Sumit Kumar Panja
Keyword(s):  
Ionic Liquids ◽  
Metal Surface ◽  
Tribological Properties ◽  
Tribological Property ◽  
Film Formation ◽  
Tribological Performance ◽  
Additive Property ◽  
Thin Film Formation ◽  
Performance Structure

Our main focus is to report the tribological properties of ionic liquids (ILs). Mainly, lubricating of ILs has been reported to understand the applicability of ionic liquids (ILs) in petroleum-based lubricant industry and energy conversion process as oil additive. The influence of counter parts of ILs on tribological property has been reported for designing efficient lubricating and oil-additive property of ILs. The effect of halogenated and nonhalogenated ILs on corrosion is also reported during tribological studies at different metal surface. Further, role of ILs as oil-additive has been discussed in terms of better tribological performance. Structure modification and role of anion on better performance of tribological property have been mentioned for enhancing effectiveness of lubricant and oil-additive properties. Origin of corrosion and thin film formation on metal surface are also discussed in detailed using different types of ILs and metal surfaces.

scholarly journals Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

Nanomaterials ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 320 ◽  
Author(s):  
Raquel Barros ◽  
Kachirayil Saji ◽  
João Waerenborgh ◽  
Pedro Barquinha ◽  
Luís Pereira ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Spectroscopic Studies ◽  
Oxide Thin Film ◽  
Enhancement Mode ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressures (Opp) between 0% and 20% but where the p-type conduction was only observed between in a narrow window, from 2.8% to 3.8%. The role of structure and composition were evaluated by XRD and Mössbauer spectroscopic studies that allows to identify the best phases/compositions and thicknesses (around 12 nm) to be used to produce p-type TFTs with saturation mobility of 4.6 cm2 V−1 s−1 and on-off ratio above 7 × 104, operating at the enhancement mode with a saturation voltage of −10 V. Moreover, a brief overview is also presented concerning the present state of the existing developments in processing SnOx TFTs with different methods and using different device configurations.

Role of SrRuO3 Buffer Layers in Enhancing Resistance Changing of Pr0.7Ca0.3MnO3 Films

2007 ◽  
Vol 124-126 ◽  
pp. 17-20
Author(s):  
Seung Woo Han ◽  
Kyoung Wan Park ◽  
Jung Hyun Sok
Keyword(s):  
Nonvolatile Memory ◽  
Room Temperature ◽  
High Resistance State ◽  
Rf Magnetron Sputtering ◽  
Memory Device ◽  
Buffer Layers ◽  
Resistance Change ◽  
Nonvolatile Memory Device ◽  
Resistance State

Resistance-switching behaviors of the Pr0.7Ca0.3MnO3(PCMO) films based metalinsulator- metal (MIM) devices has been investigated. In this work, resistance change of PCMO films deposited with SRO buffer layers by using RF-magnetron sputtering system investigated at room temperature. The ratio of the resistance change of the PCMO films with SRO buffer layers in the high-resistance state to that in the low-resistance state turned out to be much lager than that of the PCMO films without SRO buffer layers. Moreover, The reproducible property of the fabricated samples were improved. Origin of resistance change is not clear, but PCMO films with SRO buffer layers have the possibility of application for nonvolatile memory device.

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