High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer

2016 ◽  
Vol E99.C (5) ◽  
pp. 535-540 ◽  
Author(s):  
Yasutaka MAEDA ◽  
Shun-ichiro OHMI ◽  
Tetsuya GOTO ◽  
Tadahiro OHMI
Keyword(s):  
2002 ◽  
Vol 81 (12) ◽  
pp. 2190-2192 ◽  
Author(s):  
Tetsuya Nishiguchi ◽  
Hidehiko Nonaka ◽  
Shingo Ichimura ◽  
Yoshiki Morikawa ◽  
Mitsuru Kekura ◽  
...  

RSC Advances ◽  
2016 ◽  
Vol 6 (97) ◽  
pp. 94905-94910 ◽  
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Annop Klamchuen ◽  
Sukittaya Jessadaluk ◽  
Apirak Pankiew ◽  
...  

Herein, we demonstrate a powerful technique, known as reactive gas-timing (RGT) rf magnetron sputtering, to fabricate high quality Zn3N2 thin films at room temperature without applying any additional energy sources.


2001 ◽  
Vol 697 ◽  
Author(s):  
Noriaki Toyoda ◽  
Kenichi Shirai ◽  
Mititaka Terasawa ◽  
Shinji Matsui ◽  
Isao Yamada

AbstractHigh-quality Ta2O5/SiO2 were deposited with oxygen gas cluster ion assisted deposition at low-temperature for advanced optical filters. With gas cluster ion assisted deposition, high refractive index and very smooth surface of Ta2O5 films were realized. The optimum cluster ion energy and cluster ion current density for Ta2O5 films were found to be 7keV and 0.5μA/cm2, respectively. The structure of film was very uniform and no porous or columnar structures were observed. The surface or interfaces of Ta2O5/SiO2 films were also very flat by surface smoothing effect of cluster ion beams. Very smooth surface can be realized even though the bottom surface was rough. There was no significant wavelength shift after an environmental test, which indicates that dense oxide films were formed at low-temperature with O2 cluster ion assisted deposition.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Kejun Liao ◽  
Chengbo Li ◽  
Lisha Xie ◽  
Yuan Yuan ◽  
Shurong Wang ◽  
...  

AbstractOrganic–inorganic metal halide perovskite solar cells (PSCs) have recently been considered as one of the most competitive contenders to commercial silicon solar cells in the photovoltaic field. The deposition process of a perovskite film is one of the most critical factors affecting the quality of the film formation and the photovoltaic performance. A hot-casting technique has been widely implemented to deposit high-quality perovskite films with large grain size, uniform thickness, and preferred crystalline orientation. In this review, we first review the classical nucleation and crystal growth theory and discuss those factors affecting the hot-casted perovskite film formation. Meanwhile, the effects of the deposition parameters such as temperature, thermal annealing, precursor chemistry, and atmosphere on the preparation of high-quality perovskite films and high-efficiency PSC devices are comprehensively discussed. The excellent stability of hot-casted perovskite films and integration with scalable deposition technology are conducive to the commercialization of PSCs. Finally, some open questions and future perspectives on the maturity of this technology toward the upscaling deposition of perovskite film for related optoelectronic devices are presented.


2007 ◽  
Vol 47 (4-5) ◽  
pp. 786-789
Author(s):  
Koutarou Tanaka ◽  
Hiroaki Tanaka ◽  
Akinobu Teramoto ◽  
Shigetoshi Sugawa ◽  
Tadahiro Ohmi

2015 ◽  
Vol 51 (21) ◽  
pp. 4417-4420 ◽  
Author(s):  
Zhongrong Shen ◽  
Takashi Masuda ◽  
Hideyuki Takagishi ◽  
Keisuke Ohdaira ◽  
Tatsuya Shimoda

Cyclopentasilane converts into amorphous silicon film between two parallel substrates under atmospheric pressure by thermal decomposition at 350–400 °C, which combines the advantages of high throughput with cost reduction and high quality film formation.


2017 ◽  
Vol 6 (3) ◽  
pp. 924-931
Author(s):  
Douglas Henrique Cardoso ◽  
Thiago Ferreira Da Conceição ◽  
Admir Jose Giachini ◽  
Marcio Jose Rossi

Chitosan is a bioactive amino polymer with wide applications. Mainly derived from chitin of marine sources, its traditional production still has some drawbacks such as irregular supply, low quality of product and lack of standardization. Farther, extraction processes are time-consuming with considerable environmental impacts, an extremely non-green process. Many works have shown the possibility of producing native chitosan from Mucorales fungi, which is more easily extracted. Such process is advantageous due to low costs, process control and great possibility of high quality products. Moreover, the extraction of chitosan is faster and generates less pollutants. In this scenario, the possibility of standardized production allied with facilitated extraction and less probability of toxicological side effects from marine sources are characteristics that motivated this work. A Mucorales isolate was cultured and the chitosans – native and semi-synthetic – obtained through heterogeneous extraction were compared. Results show substantial differences between them. Those differences are related to the processes required for extraction, yield, productivity, and quality. This work reinforces that Mucorales fungi excel as an alternative for chitosan production.


2011 ◽  
Vol 1336 ◽  
Author(s):  
M. Takenaka ◽  
S. Takagi

ABSTRACTThe heterogeneous integration of III-V semiconductors with the Si platform is expected to provide high performance CMOS logic for future technology nodes because of high electron mobility and low electron effective mass in III-V semiconductors. However, there are many technology issues to be addressed for integrating III-V MOSFETs on the Si platform as follow; high-quality MOS interface formation, low resistivity source/drain formation, and high-quality III-V film formation on Si substrates. In this paper, we present several possible solutions for the above critical issues of III-V MOSFETs on the Si platform. In addition, we present the III-V CMOS photonics platform on which III-V MOSFETs and III-V photonics can be monolithically integrated for ultra-large scale electric-optic integrated circuits.


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