Electron and hole components of tunneling currents in metal–oxide–semiconductor diodes

Adrián N. Faigon; Andrés Vercik

doi:10.1063/1.1412839

Electron and hole components of tunneling currents in metal–oxide–semiconductor diodes

Journal of Applied Physics ◽

10.1063/1.1412839 ◽

2001 ◽

Vol 90 (10) ◽

pp. 5208-5210 ◽

Cited By ~ 1

Author(s):

Adrián N. Faigon ◽

Andrés Vercik

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Currents

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Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2963705 ◽

2008 ◽

Vol 104 (3) ◽

pp. 034313 ◽

Cited By ~ 6

Author(s):

Gargi Chakraborty ◽

C. K. Sarkar

Keyword(s):

Metal Oxide ◽

Comparative Study ◽

Silicon Dioxide ◽

Hafnium Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

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A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2019.111086 ◽

2019 ◽

Vol 216 ◽

pp. 111086

Author(s):

Fatimah Arofiati Noor ◽

Christoforus Bimo ◽

Ibnu Syuhada ◽

Toto Winata ◽

Khairurrijal Khairurrijal

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Compact Model ◽

Oxide Semiconductor ◽

Surrounding Gate ◽

Gate Tunneling ◽

Tunneling Currents

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Comparison of electron transmittances and tunneling currents in an anisotropic TiNx/HfO2/SiO2/p-Si(100) metal—oxide—semiconductor (MOS) capacitor calculated using exponential- and Airy-wavefunction approaches and a transfer matrix method

Journal of Semiconductors ◽

10.1088/1674-4926/31/12/124002 ◽

2010 ◽

Vol 31 (12) ◽

pp. 124002 ◽

Cited By ~ 10

Author(s):

Fatimah A Noor ◽

Mikrajuddin Abdullah ◽

Sukirno ◽

Khairurrijal

Keyword(s):

Metal Oxide ◽

Transfer Matrix ◽

Transfer Matrix Method ◽

Matrix Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mos Capacitor ◽

Tunneling Currents

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Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler–Nordheim tunneling regime

Applied Physics Letters ◽

10.1063/1.123385 ◽

1999 ◽

Vol 74 (6) ◽

pp. 842-843 ◽

Cited By ~ 9

Author(s):

S. Okhonin ◽

P. Fazan ◽

G. Guegan ◽

S. Deleonibus ◽

F. Martin

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tunneling Currents ◽

Nordheim Tunneling

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Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.3503457 ◽

2010 ◽

Vol 108 (9) ◽

pp. 093711 ◽

Cited By ~ 12

Author(s):

Fatimah A. Noor ◽

Mikrajuddin Abdullah ◽

Sukirno ◽

Khairurrijal ◽

Akio Ohta ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

High K ◽

Tunneling Currents

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On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1518563 ◽

2002 ◽

Vol 81 (18) ◽

pp. 3488-3490 ◽

Cited By ~ 12

Author(s):

Ming-Jer Chen ◽

Ming-Pei Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Tunneling Currents

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Near-Zero-Power Temperature Sensing via Tunneling Currents Through Complementary Metal-Oxide-Semiconductor Transistors

Scientific Reports ◽

10.1038/s41598-017-04705-6 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 18

Author(s):

Hui Wang ◽

Patrick P. Mercier

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Temperature Sensing ◽

Oxide Semiconductor ◽

Tunneling Currents

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Strain-induced changes in the gate tunneling currents in p-channel metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2168671 ◽

2006 ◽

Vol 88 (5) ◽

pp. 052108 ◽

Cited By ~ 31

Author(s):

X. Yang ◽

J. Lim ◽

G. Sun ◽

K. Wu ◽

T. Nishida ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Tunneling ◽

Tunneling Currents ◽

Induced Changes

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First-principles theory of tunneling currents in metal-oxide-semiconductor structures

Applied Physics Letters ◽

10.1063/1.2234283 ◽

2006 ◽

Vol 89 (3) ◽

pp. 032112 ◽

Cited By ~ 9

Author(s):

X.-G. Zhang ◽

Zhong-Yi Lu ◽

Sokrates T. Pantelides

Keyword(s):

Metal Oxide ◽

First Principles ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Tunneling Currents

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Water Oxidation with Metal Oxide Semiconductor Materials

10.29363/nanoge.fallmeeting.2018.162 ◽

2018 ◽

Author(s):

Sixto Gimenez

Keyword(s):

Metal Oxide ◽

Water Oxidation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Materials

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