Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors

2010 ◽  
Vol 108 (9) ◽  
pp. 093711 ◽  
Author(s):  
Fatimah A. Noor ◽  
Mikrajuddin Abdullah ◽  
Sukirno ◽  
Khairurrijal ◽  
Akio Ohta ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stack ◽  
High K ◽  
Tunneling Currents

Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k /WAlx/TiSiN gate stack

2010 ◽  
Vol 97 (2) ◽  
pp. 023501 ◽  
Author(s):  
Chang Seo Park ◽  
Muhamad M. Hussain ◽  
Gennadi Bersuker ◽  
Paul D. Kirsch ◽  
Raj Jammy
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Band Edge ◽  
Gate Stack ◽  
High K

In-Situ Deposition of High-k Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness

2019 ◽  
Vol 11 (4) ◽  
pp. 431-439 ◽  
Author(s):  
Rama Kambhampati ◽  
Sergei Koveshnikov ◽  
Vadim Tokranov ◽  
M. Yakimov ◽  
R Moore ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Semiconductor Devices ◽  
Oxide Thickness ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Equivalent Oxide Thickness ◽  
Gate Stack ◽  
In Situ Deposition ◽  
High K

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

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