Strain-induced changes in the gate tunneling currents in p-channel metal–oxide–semiconductor field-effect transistors

X. Yang; J. Lim; G. Sun; K. Wu; T. Nishida; S. E. Thompson

doi:10.1063/1.2168671

Strain-induced changes in the gate tunneling currents in p-channel metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2168671 ◽

2006 ◽

Vol 88 (5) ◽

pp. 052108 ◽

Cited By ~ 31

Author(s):

X. Yang ◽

J. Lim ◽

G. Sun ◽

K. Wu ◽

T. Nishida ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Tunneling ◽

Tunneling Currents ◽

Induced Changes

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A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2019.111086 ◽

2019 ◽

Vol 216 ◽

pp. 111086

Author(s):

Fatimah Arofiati Noor ◽

Christoforus Bimo ◽

Ibnu Syuhada ◽

Toto Winata ◽

Khairurrijal Khairurrijal

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Compact Model ◽

Oxide Semiconductor ◽

Surrounding Gate ◽

Gate Tunneling ◽

Tunneling Currents

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On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1518563 ◽

2002 ◽

Vol 81 (18) ◽

pp. 3488-3490 ◽

Cited By ~ 12

Author(s):

Ming-Jer Chen ◽

Ming-Pei Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Tunneling Currents

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Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3603023 ◽

2011 ◽

Vol 110 (1) ◽

pp. 014511 ◽

Cited By ~ 2

Author(s):

Xiaodong Yang ◽

Younsung Choi ◽

Jisong Lim ◽

Toshikazu Nishida ◽

Scott Thompson

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Leakage Current ◽

Gate Leakage ◽

Induced Changes

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2019.8901832 ◽

2019 ◽

Author(s):

Ryosho Nakane ◽

Shoichi Sato ◽

Masaaki Tanaka

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Al0.75Ga0.25N/AlxGa1-xN/Al0.75Ga0.25N/AlN/SiC Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistors With Symmetrically-Graded Widegap Channel

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2019.2956497 ◽

2020 ◽

Vol 8 ◽

pp. 9-14 ◽

Cited By ~ 1

Author(s):

Ching-Sung Lee ◽

Yan-Ting Shen ◽

Wei-Chou Hsu ◽

Yi-Ping Huang ◽

Cheng-Yang You

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Heterostructure Field Effect Transistors

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New Statistical Evaluation Method for the Variation of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2054 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2054-2057 ◽

Cited By ~ 21

Author(s):

Syunichi Watabe ◽

Shigetoshi Sugawa ◽

Akinobu Teramoto ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Evaluation Method ◽

Statistical Evaluation ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Performance improvement in 4H-SiC(0001) p-channel metal-oxide-semiconductor field-effect transistors with a gate oxide grown at ultrahigh temperature

Applied Physics Express ◽

10.7567/1882-0786/ab1b53 ◽

2019 ◽

Vol 12 (6) ◽

pp. 061003 ◽

Cited By ~ 1

Author(s):

Kidist Moges ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ultrahigh Temperature

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4H-SiC Trench Metal Oxide Semiconductor Field Effect Transistors with Low On-Resistance

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c100 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C100 ◽

Cited By ~ 9

Author(s):

Yuki Nakano ◽

Toshikazu Mukai ◽

Ryota Nakamura ◽

Takashi Nakamura ◽

Akira Kamisawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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