Two-band tunneling currents in metal-oxide-semiconductor capacitors at the transition from direct to Fowler–Nordheim tunneling regime

1999 ◽  
Vol 74 (6) ◽  
pp. 842-843 ◽  
Author(s):  
S. Okhonin ◽  
P. Fazan ◽  
G. Guegan ◽  
S. Deleonibus ◽  
F. Martin
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Tunneling Currents ◽  
Nordheim Tunneling

scholarly journals Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

2014 ◽  
Vol 105 (14) ◽  
pp. 142108 ◽  
Author(s):  
Patrick Fiorenza ◽  
Alessia Frazzetto ◽  
Alfio Guarnera ◽  
Mario Saggio ◽  
Fabrizio Roccaforte
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Nordheim Tunneling

Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors

2010 ◽  
Vol 108 (9) ◽  
pp. 093711 ◽  
Author(s):  
Fatimah A. Noor ◽  
Mikrajuddin Abdullah ◽  
Sukirno ◽  
Khairurrijal ◽  
Akio Ohta ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Stack ◽  
High K ◽  
Tunneling Currents
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