On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors

Ming-Jer Chen; Ming-Pei Lu

doi:10.1063/1.1518563

On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1518563 ◽

2002 ◽

Vol 81 (18) ◽

pp. 3488-3490 ◽

Cited By ~ 12

Author(s):

Ming-Jer Chen ◽

Ming-Pei Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Tunneling Currents

Download Full-text

A compact model for gate tunneling currents in undoped cylindrical surrounding-gate metal-oxide-semiconductor field-effect transistors

Microelectronic Engineering ◽

10.1016/j.mee.2019.111086 ◽

2019 ◽

Vol 216 ◽

pp. 111086

Author(s):

Fatimah Arofiati Noor ◽

Christoforus Bimo ◽

Ibnu Syuhada ◽

Toto Winata ◽

Khairurrijal Khairurrijal

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Compact Model ◽

Oxide Semiconductor ◽

Surrounding Gate ◽

Gate Tunneling ◽

Tunneling Currents

Download Full-text

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1379786 ◽

2001 ◽

Vol 78 (25) ◽

pp. 4034-4036 ◽

Cited By ~ 13

Author(s):

Y. T. Hou ◽

M. F. Li ◽

W. H. Lai ◽

Y. Jin

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling ◽

Hole Current

Download Full-text

Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Increased Subthreshold Current due to Source–Drain Direct Tunneling in Ultrashort-Channel III–V Metal–Oxide–Semiconductor Field-Effect Transistors

Applied Physics Express ◽

10.7567/apex.6.064301 ◽

2013 ◽

Vol 6 (6) ◽

pp. 064301 ◽

Cited By ~ 3

Author(s):

Shunsuke Koba ◽

Yōsuke Maegawa ◽

Masaki Ohmori ◽

Hideaki Tsuchiya ◽

Yoshinari Kamakura ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Subthreshold Current ◽

Direct Tunneling

Download Full-text

Analysis of Electron Tunneling Components in p+Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3193 ◽

2007 ◽

Vol 46 (5B) ◽

pp. 3193-3196 ◽

Cited By ~ 3

Author(s):

Ting-Kuo Kang ◽

San-Lein Wu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Electron Tunneling ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling

Download Full-text

Analytical Model for Direct Tunneling Gate Current in Long-Channel Undoped Cylindrical Surrounding Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.024302 ◽

2013 ◽

Vol 52 (2R) ◽

pp. 024302 ◽

Cited By ~ 2

Author(s):

Ru Han ◽

Cong Li

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Direct Tunneling ◽

Surrounding Gate ◽

Long Channel

Download Full-text

Strain-induced changes in the gate tunneling currents in p-channel metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2168671 ◽

2006 ◽

Vol 88 (5) ◽

pp. 052108 ◽

Cited By ~ 31

Author(s):

X. Yang ◽

J. Lim ◽

G. Sun ◽

K. Wu ◽

T. Nishida ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Tunneling ◽

Tunneling Currents ◽

Induced Changes

Download Full-text

Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Cited By ~ 13

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

Download Full-text

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

Download Full-text