Lateral profiling of impurity surface concentration in submicron metal–oxide–silicon transistors

Yih Wang; Chih-Tang Sah

doi:10.1063/1.1396825

Lateral profiling of impurity surface concentration in submicron metal–oxide–silicon transistors

Journal of Applied Physics ◽

10.1063/1.1396825 ◽

2001 ◽

Vol 90 (7) ◽

pp. 3539-3550 ◽

Cited By ~ 16

Author(s):

Yih Wang ◽

Chih-Tang Sah

Keyword(s):

Metal Oxide ◽

Surface Concentration ◽

Silicon Transistors ◽

Metal Oxide Silicon

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Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/19/7/016 ◽

2004 ◽

Vol 19 (7) ◽

pp. 870-876 ◽

Cited By ~ 2

Author(s):

Bin B Jie ◽

K F Lo ◽

Elgin Quek ◽

Sanford Chu ◽

Chih-Tang Sah

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Silicon Transistors ◽

Metal Oxide Silicon

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Reliability and failure modes in metal-oxide-silicon-transistors

10.1109/iedm.1964.187491 ◽

1964 ◽

Cited By ~ 1

Author(s):

P. Lamond ◽

J. Kelley ◽

M. Papkoff

Keyword(s):

Metal Oxide ◽

Failure Modes ◽

Silicon Transistors ◽

Metal Oxide Silicon

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The use of metal oxide silicon transistors in computer circuits

Microelectronics Reliability ◽

10.1016/0026-2714(69)90197-8 ◽

1969 ◽

Vol 8 (1) ◽

pp. 76

Keyword(s):

Metal Oxide ◽

Silicon Transistors ◽

Metal Oxide Silicon

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Effects of temperature annealing on charge‐injection‐induced trapping in gate oxides of metal‐oxide‐silicon transistors

Journal of Applied Physics ◽

10.1063/1.339941 ◽

1988 ◽

Vol 63 (5) ◽

pp. 1563-1568 ◽

Cited By ~ 5

Author(s):

E. Avni ◽

J. Shappir

Keyword(s):

Metal Oxide ◽

Charge Injection ◽

Gate Oxides ◽

Silicon Transistors ◽

Effects Of Temperature ◽

Metal Oxide Silicon

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Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Applied Physics Letters ◽

10.1063/1.4979035 ◽

2017 ◽

Vol 110 (12) ◽

pp. 123505 ◽

Cited By ~ 20

Author(s):

J.-S. Kim ◽

A. M. Tyryshkin ◽

S. A. Lyon

Keyword(s):

Electron Beam ◽

Metal Oxide ◽

High Mobility ◽

Interface Traps ◽

Silicon Transistors ◽

Metal Oxide Silicon

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High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

Journal of Applied Physics ◽

10.1063/1.2993916 ◽

2008 ◽

Vol 104 (9) ◽

pp. 094512 ◽

Cited By ~ 3

Author(s):

Zuhui Chen ◽

Bin B Jie ◽

Chih-Tang Sah

Keyword(s):

Metal Oxide ◽

Interface Traps ◽

Potential Well ◽

High Concentration ◽

Concentration Effects ◽

Current Voltage ◽

Silicon Transistors ◽

Metal Oxide Silicon ◽

Dc Current

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An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2621 ◽

2003 ◽

Vol 42 (Part 1, No. 5A) ◽

pp. 2621-2627 ◽

Cited By ~ 4

Author(s):

Chee-Wee Eng ◽

Wai-Shing Lau ◽

David Vigar ◽

James Yong-Meng Lee

Keyword(s):

Metal Oxide ◽

Extraction Method ◽

Channel Length ◽

Silicon Transistors ◽

Metal Oxide Silicon ◽

Effective Channel

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Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Journal of Applied Physics ◽

10.1063/1.1337596 ◽

2001 ◽

Vol 89 (4) ◽

pp. 2272-2285 ◽

Cited By ~ 71

Author(s):

Jin Cai ◽

Chih-Tang Sah

Keyword(s):

Metal Oxide ◽

Silicon Transistors ◽

Metal Oxide Silicon ◽

Gate Tunneling ◽

Tunneling Currents ◽

Ultrathin Oxide

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Oxide Charge Characteristics of Low Temperature MOS (Metal-Oxide-Silicon) Oxide Films.

10.21236/ada146447 ◽

1984 ◽

Author(s):

S. R. Butler ◽

F. J. Feigl

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Silicon Oxide ◽

Oxide Films ◽

Oxide Charge ◽

Metal Oxide Silicon

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Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown

Applied Physics Letters ◽

10.1063/1.98930 ◽

1987 ◽

Vol 51 (25) ◽

pp. 2167-2169 ◽

Cited By ~ 75

Author(s):

B. Neri ◽

P. Olivo ◽

B. Riccò

Keyword(s):

Metal Oxide ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Oxide Breakdown ◽

Metal Oxide Silicon

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