Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

2001 ◽  
Vol 89 (4) ◽  
pp. 2272-2285 ◽  
Author(s):  
Jin Cai ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon ◽  
Gate Tunneling ◽  
Tunneling Currents ◽  
Ultrathin Oxide

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon

scholarly journals Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2759
Author(s):  
Jonghwan Lee
Keyword(s):  
Analytical Model ◽  
Shot Noise ◽  
Tunneling Current ◽  
Fano Factor ◽  
Unified Model ◽  
Analytical Formulation ◽  
Landauer Formula ◽  
Gate Tunneling ◽  
Tunneling Currents ◽  
Ultrathin Oxide

A single unified analytical model is presented to predict the shot noise for both the source-to-drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.

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