Atomic-scale nature of the (3×3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy

1997 ◽  
Vol 71 (3) ◽  
pp. 362-364 ◽  
Author(s):  
S. Gwo ◽  
H. Tokumoto ◽  
S. Miwa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale

From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD

1993 ◽  
Vol 312 ◽  
Author(s):  
D. D. Vvedensky ◽  
T. Shitarat ◽  
P. Smilauer ◽  
T. Kaneko ◽  
A. Zangwill
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Energy ◽  
Atomic Scale ◽  
Basic Model ◽  
Mobile Species ◽  
Local Environments ◽  
Starting Point

AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homoepitaxy of GaAs(001) using metalorganic molecular-beam epitaxy (MOMBE) with triethylgallium (TEG) and precursors and using MOCVD with trimethylgallium (TMG). For MOMBE, the comparisons between simulations and experiments are based on reflection high-energy electron diffraction intensities, by analogy with comparisons made for MBE, while for metalorganic chemical vapor deposition (MOCVD) the simulations are compared to in situ glancingincidence x-ray scattering measurements. In both of these cases, the inclusion of a second mobile species to represent the precursor together with various rules for the decomposition of this molecule (in terms of rates and local environments) with be shown to provide a useful starting point for explaining the general trends in the experimental data and for further refinements of the model.

scholarly journals Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105001
Author(s):  
Yi-Hsun Tsai ◽  
Yu-Hsun Wu ◽  
Yen-Yu Ting ◽  
Chu-Chun Wu ◽  
Jenq-Shinn Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Si Substrate ◽  
Aluminum Films

Interfacial Structure and Stability in GexSi1−x/Si Strained Layers.

1984 ◽  
Vol 37 ◽  
Author(s):  
R. Hull ◽  
J. C. Bean ◽  
J. M. Gibson ◽  
K. J. Marcantonio ◽  
A. T. Fiory ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Atomic Scale ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Quantum Well Structures ◽  
Lattice Images

AbstractHigh resolution electron microscopy is used to probe the atomic scale structure of interfaces and defects in the GexSi1−x/Si system. By careful quantification of lattice images, it is shown that molecular beam epitaxy may be used to grow GexSi1−x/Si (100) and (111) interfaces which are sharp on the scale of the unit cell and flat to within a few atomic planes when about 5000 Å2 of the interface are sampled. Interfacial quality is retained in single and multiple quantum well structures. Conditions for superlattice stability against misfit dislocations are discussed. It is shown that GexSi1−x/Si interfaces produced by molecular beam epitaxy at 550°C can exist in a metastable state which relaxes upon thermal annealing.

NEW SUPERLATTICE ARCHITECTURE IN III-V COMPOUND SEMICONDUCTORS VIA CONTROL OF EPITAXY ON AN ATOMIC SCALE

1985 ◽  
Vol 56 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Compound Semiconductors ◽  
Atomic Scale ◽  
Prototype System ◽  
Compositional Stability

AbstractThe perfection and compositional stability of alternate monolayer compounds (AMC) structures deposited by molecular beam epitaxy as a function of several crystal growth parameters are reviewed. By using the (GaAs)1 - (AlAs)1 AMC structure as a prototype system, the effects of substrate temperature, and orientation on the AMC ordering are presented. Conditions for producing new superlattice architectures are discussed.

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