NEW SUPERLATTICE ARCHITECTURE IN III-V COMPOUND SEMICONDUCTORS VIA CONTROL OF EPITAXY ON AN ATOMIC SCALE

1985 ◽  
Vol 56 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Crystal Growth ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Compound Semiconductors ◽  
Atomic Scale ◽  
Prototype System ◽  
Compositional Stability

AbstractThe perfection and compositional stability of alternate monolayer compounds (AMC) structures deposited by molecular beam epitaxy as a function of several crystal growth parameters are reviewed. By using the (GaAs)1 - (AlAs)1 AMC structure as a prototype system, the effects of substrate temperature, and orientation on the AMC ordering are presented. Conditions for producing new superlattice architectures are discussed.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD

1993 ◽  
Vol 312 ◽  
Author(s):  
D. D. Vvedensky ◽  
T. Shitarat ◽  
P. Smilauer ◽  
T. Kaneko ◽  
A. Zangwill
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Energy ◽  
Atomic Scale ◽  
Basic Model ◽  
Mobile Species ◽  
Local Environments ◽  
Starting Point

AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homoepitaxy of GaAs(001) using metalorganic molecular-beam epitaxy (MOMBE) with triethylgallium (TEG) and precursors and using MOCVD with trimethylgallium (TMG). For MOMBE, the comparisons between simulations and experiments are based on reflection high-energy electron diffraction intensities, by analogy with comparisons made for MBE, while for metalorganic chemical vapor deposition (MOCVD) the simulations are compared to in situ glancingincidence x-ray scattering measurements. In both of these cases, the inclusion of a second mobile species to represent the precursor together with various rules for the decomposition of this molecule (in terms of rates and local environments) with be shown to provide a useful starting point for explaining the general trends in the experimental data and for further refinements of the model.

Growth mechanism of II–VI compound semiconductors by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 587-592 ◽  
Author(s):  
Hiroyuki Okuyama ◽  
Takayuki Kawasumi ◽  
Akira Ishibashi ◽  
Masao Ikeda
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Mechanism ◽  
Molecular Beam ◽  
Compound Semiconductors

scholarly journals Scanning Tunneling Microscopy Studies of InGaN Growth by Molecular Beam Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 858-863
Author(s):  
Huajie Chen ◽  
A. R. Smith ◽  
R. M. Feenstra ◽  
D. W. Greve ◽  
J. E. Northrup
Keyword(s):  
Molecular Beam Epitaxy ◽  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Growth Parameters ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Group V ◽  
Group Iii ◽  
Ingan Alloys

InGaN alloys with indium compositions ranging from 0–40% have been grown by molecular beam epitaxy. The dependence of the indium incorporation on growth temperature and group III/group V ratio has been studied. Scanning tunneling microscopy images, interpreted using first-principles theoretical computations, show that there is strong indium surface segregation on InGaN. Based on this surface segregation, a qualitative model is proposed to explain the observed indium incorporation dependence on the growth parameters.

scholarly journals Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105001
Author(s):  
Yi-Hsun Tsai ◽  
Yu-Hsun Wu ◽  
Yen-Yu Ting ◽  
Chu-Chun Wu ◽  
Jenq-Shinn Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Si Substrate ◽  
Aluminum Films
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