Atomic-scale surface structure and ultrasmooth morphology of molecular-beam-epitaxy-grown AlAs (001)-(3×2)

1997 ◽  
Vol 55 (4) ◽  
pp. R1962-R1965 ◽  
Author(s):  
Shangjr Gwo ◽  
Hirotaka Ohno ◽  
Hiroshi Tokumoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Structure ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Scale Surface

From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD

1993 ◽  
Vol 312 ◽  
Author(s):  
D. D. Vvedensky ◽  
T. Shitarat ◽  
P. Smilauer ◽  
T. Kaneko ◽  
A. Zangwill
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Energy ◽  
Atomic Scale ◽  
Basic Model ◽  
Mobile Species ◽  
Local Environments ◽  
Starting Point

AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homoepitaxy of GaAs(001) using metalorganic molecular-beam epitaxy (MOMBE) with triethylgallium (TEG) and precursors and using MOCVD with trimethylgallium (TMG). For MOMBE, the comparisons between simulations and experiments are based on reflection high-energy electron diffraction intensities, by analogy with comparisons made for MBE, while for metalorganic chemical vapor deposition (MOCVD) the simulations are compared to in situ glancingincidence x-ray scattering measurements. In both of these cases, the inclusion of a second mobile species to represent the precursor together with various rules for the decomposition of this molecule (in terms of rates and local environments) with be shown to provide a useful starting point for explaining the general trends in the experimental data and for further refinements of the model.

scholarly journals Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105001
Author(s):  
Yi-Hsun Tsai ◽  
Yu-Hsun Wu ◽  
Yen-Yu Ting ◽  
Chu-Chun Wu ◽  
Jenq-Shinn Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Si Substrate ◽  
Aluminum Films

scholarly journals Atomic Scale Surface Structure and Morphology of InAs Nanowire Crystal Superlattices: The Effect of Epitaxial Overgrowth

2015 ◽  
Vol 7 (10) ◽  
pp. 5748-5755 ◽  
Author(s):  
J. V. Knutsson ◽  
S. Lehmann ◽  
M. Hjort ◽  
P. Reinke ◽  
E. Lundgren ◽  
...  
Keyword(s):  
Surface Structure ◽  
Atomic Scale ◽  
Structure And Morphology ◽  
Scale Surface
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