Combined molecular beam epitaxy low temperature scanning tunneling microscopy system: Enabling atomic scale characterization of semiconductor surfaces and interfaces

2005 ◽  
Vol 23 (4) ◽  
pp. 1684 ◽  
Author(s):  
M. Krause ◽  
A. Stollenwerk ◽  
C. Awo-Affouda ◽  
B. Maclean ◽  
V. P. LaBella
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Surfaces And Interfaces ◽  
Scale Characterization ◽  
Temperature Scanning

Atomic-scale Characterization of HF-treated 4H-SiC(0001)1×1 Surfaces by Scanning Tunneling Microscopy

2007 ◽  
Vol 996 ◽  
Author(s):  
Kenta Arima ◽  
Hideyuki Hara ◽  
Yasuhisa Sano ◽  
Keita Yagi ◽  
Ryota Okamoto ◽  
...  
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Chemical Preparation ◽  
Local Structures ◽  
Wet Chemical ◽  
Low Energy Electron ◽  
Scale Characterization

AbstractScanning tunneling microscopy (STM) observations are performed on 4H-SiC(0001) surfaces after wet-chemical preparation steps including HF treatments.1×1 structures are formed on a terrace together with other local structures. Their atomic images are investigated in conjunction with low-energy electron diffraction and electron spectroscopy for chemical analysis. It is suggested that each bright dot forming the 1×1 phase corresponds to an OH-terminated Si atom.

Atomic Scale Characterization of (NH4)2Sx-Treated GaAs (100) Surface

1994 ◽  
Vol 332 ◽  
Author(s):  
Naoki Yokoi ◽  
Hiroya Andoh ◽  
Mikio Takai
Keyword(s):  
Surface Region ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Ion Scattering ◽  
Tunneling Microscopy ◽  
Xps Spectra ◽  
Sulfur Layer ◽  
Scale Characterization ◽  
Medium Energy Ion Scattering

ABSTRACTThe geometric structure of GaAs (100) surfaces, treated in a (NH4)2Sx solution and annealed in N2 environment, has been studied in an atomic scale using high-resolution Rutherford backscattering (RBS), X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). RBS analysis using medium energy ion scattering (MEIS) could provide the thickness of the sulfur layer on the GaAs surface of about 1.5 monolayers. RBS channeling spectra indicated that the disorder of atoms in the surface region of S-terminated samples was smaller than that of untreated one. XPS spectra showed that S atoms on the surface bonded only As atoms. STM observation revealed that S atoms had a periodicity of 4 Å corresponding to that of Ga or As atoms in the (100) plane.

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