Interfacial Structure and Stability in GexSi1−x/Si Strained Layers.

1984 ◽  
Vol 37 ◽  
Author(s):  
R. Hull ◽  
J. C. Bean ◽  
J. M. Gibson ◽  
K. J. Marcantonio ◽  
A. T. Fiory ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Atomic Scale ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Quantum Well Structures ◽  
Lattice Images

AbstractHigh resolution electron microscopy is used to probe the atomic scale structure of interfaces and defects in the GexSi1−x/Si system. By careful quantification of lattice images, it is shown that molecular beam epitaxy may be used to grow GexSi1−x/Si (100) and (111) interfaces which are sharp on the scale of the unit cell and flat to within a few atomic planes when about 5000 Å2 of the interface are sampled. Interfacial quality is retained in single and multiple quantum well structures. Conditions for superlattice stability against misfit dislocations are discussed. It is shown that GexSi1−x/Si interfaces produced by molecular beam epitaxy at 550°C can exist in a metastable state which relaxes upon thermal annealing.

Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
F. G. Johnson ◽  
G. W. Wicks ◽  
R. E. Viturro ◽  
R. Laforce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Group V ◽  
X Ray

ABSTRACTWe report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the group V fluxes with the cracker needle valves, arsenide-phosphide heterostructures were successfully grown with virtually no group V intermixing between layers. For comparison, similar heterostructure samples were grown using only the mechanical shutters to switch between group V fluxes, and the resulting layers were severely intermixed. The amount of group V intermixing was shown to be independent of whether As2 or As4 fluxes were used to grow the layers. A GaAs/Ga0.5In0.5P multiple quantum well sample was also grown using the valved crackers. Photoluminescence peaks were clearly observed from 40 Å, 80 Å, and 300 Å GaAs quantum wells, but no luminescence was detected from a 20 Å well. An 80Å GaAs/ 80Å Ga0.5In0.5P superlattice was grown, and superlattice satellite peaks were observed in the X-ray rocking curves. The appearance of misfit dislocations suggests localized intermixing at the interfaces.

scholarly journals Recombination Processes in Doped CdTe/CdMnTe Multiple Quantum Well Structures Grown by Molecular Beam Epitaxy

1997 ◽  
Vol 92 (4) ◽  
pp. 757-760
Author(s):  
M. Godlewski ◽  
T. Wojtowicz ◽  
G. Karczewski ◽  
J. Kossut ◽  
J.P. Bergman ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Recombination Processes
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