Temperature dependence of atomic scale morphology in Si homoepitaxy between 350 and 800 °C on Si (100) by molecular beam epitaxy

2001 ◽  
Vol 19 (5) ◽  
pp. 2307-2311 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Phillip E. Thompson
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Scale Morphology

From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD

1993 ◽  
Vol 312 ◽  
Author(s):  
D. D. Vvedensky ◽  
T. Shitarat ◽  
P. Smilauer ◽  
T. Kaneko ◽  
A. Zangwill
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Energy ◽  
Atomic Scale ◽  
Basic Model ◽  
Mobile Species ◽  
Local Environments ◽  
Starting Point

AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homoepitaxy of GaAs(001) using metalorganic molecular-beam epitaxy (MOMBE) with triethylgallium (TEG) and precursors and using MOCVD with trimethylgallium (TMG). For MOMBE, the comparisons between simulations and experiments are based on reflection high-energy electron diffraction intensities, by analogy with comparisons made for MBE, while for metalorganic chemical vapor deposition (MOCVD) the simulations are compared to in situ glancingincidence x-ray scattering measurements. In both of these cases, the inclusion of a second mobile species to represent the precursor together with various rules for the decomposition of this molecule (in terms of rates and local environments) with be shown to provide a useful starting point for explaining the general trends in the experimental data and for further refinements of the model.

scholarly journals Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105001
Author(s):  
Yi-Hsun Tsai ◽  
Yu-Hsun Wu ◽  
Yen-Yu Ting ◽  
Chu-Chun Wu ◽  
Jenq-Shinn Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Si Substrate ◽  
Aluminum Films

Substrate temperature dependence of surface migration of As atoms during molecular beam epitaxy of GaAsP on a (411)A GaAs substrate

2001 ◽  
Vol 227-228 ◽  
pp. 266-270 ◽  
Author(s):  
Yasuaki Tatsuoka ◽  
Masaya Uemura ◽  
Takahiro Kitada ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Surface Migration

Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

2011 ◽  
Vol 318 (1) ◽  
pp. 450-453 ◽  
Author(s):  
Chia-Hung Lin ◽  
Ryota Abe ◽  
Takahiro Maruyama ◽  
Shigeya Naritsuka
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Selective Growth ◽  
Metal Organic

Temperature dependence of optical transitions in AlxGa1–xAs/GaAs quantum well structures grown by molecular beam epitaxy

2005 ◽  
Vol 490 (2) ◽  
pp. 161-164 ◽  
Author(s):  
A. Caballero-Rosas ◽  
C. Mejía-García ◽  
G. Contreras-Puente ◽  
M. López-López
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Optical Transitions ◽  
Quantum Well Structures

Reduced temperature dependence of threshold of (Al,Ga)As lasers grown by molecular beam epitaxy

1981 ◽  
Vol 38 (12) ◽  
pp. 974-976 ◽  
Author(s):  
J. R. Pawlik ◽  
W. T. Tsang ◽  
F. R. Nash ◽  
R. L. Hartman ◽  
V. Swaminathan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Molecular Beam ◽  
Reduced Temperature
Sign in / Sign up

Export Citation Format

Share Document