scholarly journals Nano- to atomic-scale epitaxial aluminum films on Si substrate grown by molecular beam epitaxy

AIP Advances ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 105001
Author(s):  
Yi-Hsun Tsai ◽  
Yu-Hsun Wu ◽  
Yen-Yu Ting ◽  
Chu-Chun Wu ◽  
Jenq-Shinn Wu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Scale ◽  
Si Substrate ◽  
Aluminum Films

Effect of SiO2 Thickness on GaAs Nanowires on Si (111) Substrates Grown by Molecular Beam Epitaxy

2015 ◽  
Vol 1131 ◽  
pp. 16-19
Author(s):  
Patchareewan Prongjit ◽  
Samatcha Vorathamrong ◽  
Somsak Panyakeow ◽  
Chiraporn Tongyam ◽  
Piyasan Prasertthdam ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Scanning Electron Microscope ◽  
Structural Properties ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Gaas Nanowires ◽  
Scanning Electron

The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

Ge beam treatment of Si substrate for molecular beam epitaxy

1993 ◽  
Vol 2 (9) ◽  
pp. 671-677
Author(s):  
Cui Qian ◽  
Lu Xue-kun ◽  
Wei Xing ◽  
Yang Xiao-ping ◽  
Gong Da-wei ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrate

From Adatom Migration to Chemical Kinetics: Models for MBE, Mombe and MOCVD

1993 ◽  
Vol 312 ◽  
Author(s):  
D. D. Vvedensky ◽  
T. Shitarat ◽  
P. Smilauer ◽  
T. Kaneko ◽  
A. Zangwill
Keyword(s):  
Experimental Data ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Energy ◽  
Atomic Scale ◽  
Basic Model ◽  
Mobile Species ◽  
Local Environments ◽  
Starting Point

AbstractThe application of Monte Carlo simulations to various epitaxial growth methods is examined from the standpoint of incorporating only those kinetics processes that are required to explain experimental data. A basic model for molecular-beam epitaxy (MBE) is first introduced and some of the features that make it suitable for describing atomic-scale processes are pointed out. Extensions of this model for cases where the atomic constituents of the growing surface are delivered in the form of heteroatomic molecules are then considered. The experimental scenarios that is discussed is the homoepitaxy of GaAs(001) using metalorganic molecular-beam epitaxy (MOMBE) with triethylgallium (TEG) and precursors and using MOCVD with trimethylgallium (TMG). For MOMBE, the comparisons between simulations and experiments are based on reflection high-energy electron diffraction intensities, by analogy with comparisons made for MBE, while for metalorganic chemical vapor deposition (MOCVD) the simulations are compared to in situ glancingincidence x-ray scattering measurements. In both of these cases, the inclusion of a second mobile species to represent the precursor together with various rules for the decomposition of this molecule (in terms of rates and local environments) with be shown to provide a useful starting point for explaining the general trends in the experimental data and for further refinements of the model.

Si‐substrate preparation for GaAs/Si molecular‐beam epitaxy at low temperature under a Si flux

1988 ◽  
Vol 64 (1) ◽  
pp. 246-248 ◽  
Author(s):  
J. Castagne ◽  
E. Bedel ◽  
C. Fontaine ◽  
A. Munoz‐Yague
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Si Substrate ◽  
Substrate Preparation

Study of Substrate Induced Deep Level Defects in Bulk GaN Layers Grown by Molecular Beam Epitaxy Using Deep Level Transient Spectroscopy

2011 ◽  
Vol 295-297 ◽  
pp. 777-780 ◽  
Author(s):  
M. Ajaz Un Nabi ◽  
M. Imran Arshad ◽  
Adnan Ali ◽  
M. Asghar ◽  
M. A Hasan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Deep Level Transient Spectroscopy ◽  
Molecular Beam ◽  
Deep Level ◽  
Diffusion Mechanism ◽  
Electron Trap ◽  
Si Substrate ◽  
Bulk Gan ◽  
Related Defect ◽  
Transient Spectroscopy

In this paper we have investigated the substrate-induced deep level defects in bulk GaN layers grown onp-silicon by molecular beam epitaxy. Representative deep level transient spectroscopy (DLTS) performed on Au-GaN/Si/Al devices displayed only one electron trap E1at 0.23 eV below the conduction band. Owing to out-diffusion mechanism; silicon diffuses into GaN layer from Si substrate maintained at 1050°C, E1level is therefore, attributed to the silicon-related defect. This argument is supported by growth of SiC on Si substrate maintained at 1050°C in MBE chamber using fullerene as a single evaporation source.

Growth of ZnO on Si Substrate by Plasma-Assisted Molecular Beam Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 12) ◽  
pp. 7209-7212 ◽  
Author(s):  
Noriaki Kawamoto ◽  
Miki Fujita ◽  
Tomohiko Tatsumi ◽  
Yoshiji Horikoshi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrate
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