scholarly journals High resistivity and ultrafast carrier lifetime in argon implanted GaAs

1996 ◽  
Vol 69 (17) ◽  
pp. 2569-2571 ◽  
Author(s):  
W. Walukiewicz ◽  
Z. Liliental‐Weber ◽  
J. Jasinski ◽  
M. Almonte ◽  
A. Prasad ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
High Resistivity ◽  
Ultrafast Carrier

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

2017 ◽  
Vol 31 (27) ◽  
pp. 1750195 ◽  
Author(s):  
D. I. Khusyainov ◽  
C. Dekeyser ◽  
A. M. Buryakov ◽  
E. D. Mishina ◽  
G. B. Galiev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
High Resistivity ◽  
Ultrafast Carrier Dynamics ◽  
Si Doping ◽  
Ultrafast Optical ◽  
Donor And Acceptor ◽  
Ultrafast Carrier ◽  
Lt Gaas

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping

1998 ◽  
Vol 510 ◽  
Author(s):  
R.C. Lutz ◽  
P. Specht ◽  
R. Zhao ◽  
S. Jeong ◽  
J. Bokor ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Carrier Lifetime ◽  
Thermal Stabilization ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Defect Band ◽  
Temperature Growth ◽  
Undoped Material ◽  
Strain Compensation ◽  
Beryllium Doping

AbstractBeryllium-doped, non-stoichiometric GaAs grown by MBE at low temperatures appears superior to its undoped counterpart in several key areas vital to device manufacturing. X-ray diffraction studies have indicated that material grown above 275°C shows complete thermal stability to annealing at temperatures up to 600°C. This behavior is ascribed in part to strain compensation between the small beryllium atoms and the large arsenic antisites. Consequently, outdiffusion of excess arsenic from the non-stoichiometric material into neighboring layers upon annealing or subsequent high temperature growth is expected to be negligible. Short carrier lifetime (<1 psec) and high resistivity (>104 Ω-cm) have been observed in the same as-grown material. Sub-picosecond lifetimes have been measured previously in undoped material, but the low growth temperatures required produce a supersaturation of antisites allowing for significant hopping conductivity through the defect band in as-grown material, and significant arsenic outdiffusion upon annealing. Due to electrical compensation of antisites by beryllium acceptors, materials in which the ionized antisites represent a major fraction of a relatively small total antisite concentration are now made possible by proceeding to higher growth temperatures. Thus, nonstoichiometric GaAs having a beneficial combination of thermal stability, short carrier lifetime and high resistivity can be fabricated

Ultrafast carrier mobilities in high-resistivity iron-doped Ga0.69In0.31As photoconducting antennas

2009 ◽  
Vol 95 (21) ◽  
pp. 211102 ◽  
Author(s):  
Suranjana Sengupta ◽  
Ingrid Wilke ◽  
Partha. S. Dutta
Keyword(s):  
High Resistivity ◽  
Ultrafast Carrier ◽  
Iron Doped ◽  
Photoconducting Antennas

Effect of Combined Oxygenation and Gettering on Minority Carrier Lifetime in High-Resistivity FZ Silicon

2004 ◽  
Vol 151 (10) ◽  
pp. G652 ◽  
Author(s):  
M. Lozano ◽  
M. Ullán ◽  
C. Martı́nez ◽  
L. Fonseca ◽  
J. M. Rafı́ ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
High Resistivity

scholarly journals Влияние условий формирования геттера в высокоомном кремнии на характеристики PIN-фотодиодов

2020 ◽  
Vol 46 (21) ◽  
pp. 11
Author(s):  
И.Б. Чистохин ◽  
К.Б. Фрицлер
Keyword(s):  
Ion Implantation ◽  
Dark Current ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Phosphorus Doping ◽  
Polysilicon Film ◽  
Pin Photodiode ◽  
Current Value ◽  
Dark Currents ◽  
High Resistivity Silicon

The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900 0C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.

Free carrier lifetime in high resistivity aluminium antimonide

1967 ◽  
Vol 5 (5) ◽  
pp. 395-397 ◽  
Author(s):  
Norma G. Blamires ◽  
P.E. Gibbons
Keyword(s):  
Carrier Lifetime ◽  
Free Carrier ◽  
High Resistivity

Er-Doped GaAs for High Speed Photoconductor Applications

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Gupta ◽  
S. Sethi ◽  
P. K. Bhattacharya ◽  
S. Williamson
Keyword(s):  
Optical Communications ◽  
Potential Application ◽  
High Speed ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Light Sources ◽  
Erbium Doped ◽  
Er Doped

ABSTRACTThe observation of 1.54 μm luminescence in erbium-doped-GaAs (GaAs:Er) and AlxGal-xAs, has stimulated research efforts because of their potential application to light sources in optical communications. In this paper, we study a different aspect of the photoresponse behavior of this material. The dependence of the carrier lifetime on the doping concentration of Erbium is investigated in GaAs:Er grown by MBE. A reduction in the carrier lifetime down to ∼1 ps is observed for the highest doping (∼5×1019 cm−3) investigated. Together with the high-resistivity observed for the higher doping values, this material serves as a novel photoconductor material for high-speed optoelectronics.

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