International Conference onIndium Phosphide and Related Materials, 2003.
Latest Publications

TOTAL DOCUMENTS

150

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780377044

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICs

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205353 ◽

2003 ◽

Cited By ~ 20

Author(s):

J. Bergman ◽

G. Nagy ◽

G. Sullivan ◽

B. Brar ◽

C. Kadow ◽

...

Keyword(s):

Low Power

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InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205438 ◽

2003 ◽

Cited By ~ 1

Author(s):

T. Tsuchiya ◽

J. Shimizu ◽

M. Shirai ◽

M. Aoki

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Selective Area Growth ◽

Selective Area ◽

Inp Substrate ◽

Area Growth

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Reliable and damage-free dry grating etching for the InGaAsP DFB laser diodes

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205421 ◽

2003 ◽

Author(s):

Hyeon Soo Kim ◽

Eun-Hwa Lee ◽

Do Young Rhee ◽

Young Churl Bang ◽

Joon Sang Yu ◽

...

Keyword(s):

Laser Diodes ◽

Dfb Laser

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Interface and material-quality study of InGaAsP/InP and InGaAsP/sub 1//InGaAsP/sub 2/ superlattices

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205404 ◽

2003 ◽

Author(s):

N. El-Zein ◽

B.T. McDermott

Keyword(s):

Material Quality ◽

Quality Study

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Effect of base thickness reduction on high speed characteristics and base resistance of InGaAs/InP heterojunction bipolar transistor

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205331 ◽

2003 ◽

Cited By ~ 1

Author(s):

M. Kahn ◽

S. Blayac ◽

M. Riet ◽

P. Berdaguer ◽

V. Dhalluin ◽

...

Keyword(s):

High Speed ◽

Bipolar Transistor ◽

Heterojunction Bipolar Transistor ◽

Thickness Reduction ◽

Base Thickness ◽

Base Resistance

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Opto-electronic quantum telecommunications based on spins in semiconductors

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205380 ◽

2003 ◽

Author(s):

E. Yablonovitch ◽

H. Kosaka ◽

H.D. Robinson ◽

D.S. Rao ◽

T. Szkopek

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Ultrafast carrier trapping and recombination in high resistivity ion implanted InP

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205411 ◽

2003 ◽

Author(s):

A. Gaarder ◽

S. Marcinkevicius ◽

C. Carmody ◽

H.H. Tan ◽

C. Jagadish

Keyword(s):

High Resistivity ◽

Carrier Trapping ◽

Ultrafast Carrier ◽

Ion Implanted

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Effect of deposition method on the density of InAs/InGaAs quantum dot

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205414 ◽

2003 ◽

Author(s):

Fu-Yu Chang ◽

T.C. Wu ◽

Hao-Hsiung Lin

Keyword(s):

Quantum Dot ◽

Deposition Method

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High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205406 ◽

2003 ◽

Author(s):

A. Wilk ◽

S. Godey ◽

P. Gerard ◽

C. Chaix ◽

F. Mollot

Keyword(s):

High Quality ◽

High Uniformity

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InGaAsP multi-quantum wells at 1.5 μm wavelength grown on indium phosphide templates on silicon

International Conference onIndium Phosphide and Related Materials, 2003. ◽

10.1109/iciprm.2003.1205369 ◽

2003 ◽

Cited By ~ 1

Author(s):

Y.T. Sun ◽

K. Baskar ◽

J. Berggren ◽

S. Lourdudoss

Keyword(s):

Indium Phosphide ◽

Quantum Wells

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International Conference onIndium Phosphide and Related Materials, 2003.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICs

InGaAlAs selective-area growth on an InP substrate by metalorganic vapor phase epitaxy

Reliable and damage-free dry grating etching for the InGaAsP DFB laser diodes

Interface and material-quality study of InGaAsP/InP and InGaAsP/sub 1//InGaAsP/sub 2/ superlattices

Effect of base thickness reduction on high speed characteristics and base resistance of InGaAs/InP heterojunction bipolar transistor

Opto-electronic quantum telecommunications based on spins in semiconductors

Ultrafast carrier trapping and recombination in high resistivity ion implanted InP

Effect of deposition method on the density of InAs/InGaAs quantum dot

High uniformity and high quality P-based heterostructures grown by a production MBE system for optoelectronics applications

InGaAsP multi-quantum wells at 1.5 μm wavelength grown on indium phosphide templates on silicon

International Conference onIndium Phosphide and Related Materials, 2003.
Latest Publications