Thermal Stabilization of Non-Stoichiometric GaAs through Beryllium Doping

1998 ◽  
Vol 510 ◽  
Author(s):  
R.C. Lutz ◽  
P. Specht ◽  
R. Zhao ◽  
S. Jeong ◽  
J. Bokor ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Carrier Lifetime ◽  
Thermal Stabilization ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
Defect Band ◽  
Temperature Growth ◽  
Undoped Material ◽  
Strain Compensation ◽  
Beryllium Doping

AbstractBeryllium-doped, non-stoichiometric GaAs grown by MBE at low temperatures appears superior to its undoped counterpart in several key areas vital to device manufacturing. X-ray diffraction studies have indicated that material grown above 275°C shows complete thermal stability to annealing at temperatures up to 600°C. This behavior is ascribed in part to strain compensation between the small beryllium atoms and the large arsenic antisites. Consequently, outdiffusion of excess arsenic from the non-stoichiometric material into neighboring layers upon annealing or subsequent high temperature growth is expected to be negligible. Short carrier lifetime (<1 psec) and high resistivity (>104 Ω-cm) have been observed in the same as-grown material. Sub-picosecond lifetimes have been measured previously in undoped material, but the low growth temperatures required produce a supersaturation of antisites allowing for significant hopping conductivity through the defect band in as-grown material, and significant arsenic outdiffusion upon annealing. Due to electrical compensation of antisites by beryllium acceptors, materials in which the ionized antisites represent a major fraction of a relatively small total antisite concentration are now made possible by proceeding to higher growth temperatures. Thus, nonstoichiometric GaAs having a beneficial combination of thermal stability, short carrier lifetime and high resistivity can be fabricated

scholarly journals Comparison of Thermal Stability of Epitaxially Grown (La0.5Sr0.5)CoO3 and (La0.6Sr0.4)MnO3 Thin Films Deposited on Si Substrate

2010 ◽  
Vol 445 ◽  
pp. 160-163
Author(s):  
Shigeki Sawamura ◽  
Naonori Sakamoto ◽  
De Sheng Fu ◽  
Kazuo Shinozaki ◽  
Hisao Suzuki ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Stability ◽  
High Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Post Annealing ◽  
Thermal Stability Of

Thermal stability of bottom electrode thin films (La0.5Sr0.5)CoO3 (LSCO) and (La0.6Sr0.4)MnO3 (LSMO) were investigated. The crystallization and surface morphology of the heterostructure were characterized using x-ray diffraction and atomic force microscopy. Resistivity of the LSCO thin film was 25 cm. However, the resistivity of LSCO thin film increases sharply with annealing temperature. The LSMO thin film has high resistivity (100 mcm). The film does not decompose after thermal processing at 900 °C. To confirm thermal stability, we examined the effect of post annealing at various temperatures on the morphology and resistivity. Results showed that LSMO has higher thermal stability than that of LSCO.

scholarly journals The influence of an ultra-high resistivity Ta underlayer on perpendicular magnetic anisotropy in Ta/Pt/Co/Pt heterostructures

RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetic Anisotropy ◽  
High Stability ◽  
Essential Role ◽  
Perpendicular Magnetic Anisotropy ◽  
Low Energy ◽  
High Resistivity ◽  
Excellent Thermal Stability ◽  
Low Energy Consumption

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.

Effect of Bottom Electrodes on Structural and Electrical Properties of Laser Ablated SrBi2Ta2O9 Thin Films

2001 ◽  
Vol 688 ◽  
Author(s):  
Rasmi R. Das ◽  
W. Pérez ◽  
P. Bhattacharya ◽  
Ram. S. Katiyar
Keyword(s):  
Thin Films ◽  
Barrier Height ◽  
Ferroelectric Properties ◽  
High Resistivity ◽  
Emission Model ◽  
X Ray Diffraction ◽  
Oxide Electrodes ◽  
Maximum Value ◽  
Structural And Electrical Properties ◽  
Raman Modes

AbstractWe have grown SrBi2Ta2O9 (SBT) thin films on various bottom electrodes such as Pt/TiO2/SiO2/Si (Pt) and LaNiO3/Pt/TiO2/SiO2/Si (LNO) substrates. The substrate temperature and oxygen pressure for the SBT film was maintained at 500 °C and 200 mTorr. As-grown films were post-annealed at a temperature of 800 °C. X-ray diffraction studies revealed that as-grown films were amorphous and crystallized to single phase after annealing. The difficulty of obtaining lowest Raman modes of SBT on platinized silicon substrate was overcome by using conducting oxide electrodes. Films grown on platinized silicon showed maximum value of remanent polarization (2Pr ∼ 21.5 μC/cm2) with coercive field (Ec) of ∼ 67 kV/cm. The degradation of ferroelectric properties of the films was observed with the introduction of 50 nm conducting LaNiO3 electrode at the interface of Pt and SBT film, which was attributed to high resistivity of the oxide electrode layers. Leakage current density was studied with the consideration of the Schottky emission model. The barrier height of the films grown on Pt and LNO were estimated to be 1.27 eV and 1.12 eV, respectively. The reduction of barrier height was attributed to the lower work function of the LNO electrode.

scholarly journals Multiscale Copper-µDiamond Nanostructured Composites

2012 ◽  
Vol 730-732 ◽  
pp. 925-930
Author(s):  
Daniela Nunes ◽  
Vanessa Livramento ◽  
Horácio Fernandes ◽  
Carlos Silva ◽  
Nobumitsu Shohoji ◽  
...  
Keyword(s):  
Pure Copper ◽  
Thermal Stabilization ◽  
Hot Extrusion ◽  
Processing Parameters ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optimal Processing ◽  
Novel Approach ◽  
Transmission Electron

Nanostructured copper-diamond composites can be tailored for thermal management applications at high temperature. A novel approach based on multiscale diamond dispersions is proposed for the production of this type of materials: a Cu-nDiamond composite produced by high-energy milling is used as a nanostructured matrix for further dispersion of micrometer sized diamond. The former offers strength and microstructural thermal stability while the latter provides high thermal conductivity. A series of Cu-nDiamond mixtures have been milled to define the minimum nanodiamond fraction suitable for matrix refinement and thermal stabilization. A refined matrix with homogenously dispersed nanoparticles could be obtained with 4 at.% nanodiamond for posterior mixture with mDiamond and subsequent consolidation. In order to define optimal processing parameters, consolidation by hot extrusion has been carried out for a Cu-nDiamond composite and, in parallel, for a mixture of pure copper and mDiamond. The materials produced were characterized by X-ray diffraction, scanning and transmission electron microscopy and microhardness measurements.

Thermal Stability and Crystallization Behavior of PP/Organoclay Phase Change Composites

2013 ◽  
Vol 785-786 ◽  
pp. 123-126
Author(s):  
Ying Ye ◽  
Kun Yan Wang ◽  
Ge Chang ◽  
Qian Ying Jiang
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Melt Blending ◽  
X Ray Diffraction ◽  
Nucleation Agent ◽  
Scanning Calorimetry ◽  
Blending Method ◽  
Phase Change Composites ◽  
Change Material

Polypropylene/organoclay modified by dodecanol phase change material were prepared by melt blending method. The thermal stability and crystallization behavior was studied by thermogravimetry (TG), differential scanning calorimetry (DSC), and X-ray diffraction (XRD). TG results indicated the window of processing of PP could be improved by adding small amount organoclay modified by dodecanol to the blend. DSC showed the organoclay modified by dodecanol affected the crystallization behavior of PP as heterogeneous nucleation agent. XRD results show that the organoclay modified by dodecanol does not change the crystal structure in the blends but only decrease the intensity of the diffraction peak.

Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis

1998 ◽  
Vol 514 ◽  
Author(s):  
M. F. Wu ◽  
A. Vantomne ◽  
S. Hogg ◽  
H. Pattyn ◽  
G. Langouche ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ion Beam ◽  
Hexagonal Structure ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Good Crystalline Quality ◽  
Ion Beam Synthesis ◽  
Thermal Stability Of

ABSTRACTThe Nd-disilicide, which exists only in a tetragonal or an orthorhombic structure, cannot be grown epitaxially on a Si(111) substrate. However, by adding Y and using channeled ion beam synthesis, hexagonal Nd0.32Y0.68Si1.7 epilayers with lattice constant of aepi = 0.3915 nm and cepi = 0.4152 nm and with good crystalline quality (χmin of Nd and Y is 3.5% and 4.3 % respectively) are formed in a Si(111) substrate. This shows that the addition of Y to the Nd-Si system forces the latter into a hexagonal structure. The epilayer is stable up to 950 °C; annealing at 1000 °C results in partial transformation into other phases. The formation, the structure and the thermal stability of this ternary silicide have been studied using Rutherford backscattering/channeling, x-ray diffraction and transmission electron microscopy.

Study of Thermal Behaviour of EPDM/SBR Blends and Carbon Nanocoatings Deposited by Sputtering

2021 ◽  
Vol 875 ◽  
pp. 116-120
Author(s):  
Muhammad Alamgir ◽  
Faizan Ali Ghauri ◽  
Waheed Qamar Khan ◽  
Sajawal Rasheed ◽  
Muhammad Sarfraz Nawaz ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Weight Loss ◽  
Thermogravimetric Analysis ◽  
Thermal Behavior ◽  
Thermal Behaviour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermal Stability Of

In this study, the effect of SBR concentration (10 Phr, 20 Phr & 30 Phr ) on the thermal behavior of EPDM/SBR blends was studied. Thermogravimetric analysis (TGA) was used to check weight loss of samples as function of temperature by heating upto 600°C. X-ray diffraction (XRD) was performed to determine quality and % crystallinity of the elastomer blends. It was seen that % crystallinity improved with an increase in the content of SBR in EPDM/SBR blends. TGA revealed that the thermal stability of EPDM/SBR blends has improved by 17% than neat EPDM. Carbon nano-coatings produced by sputtering have no beneficial influence on thermal behaviour of elastomers.

Thermal stability and miscibility of co-evaporated methyl ammonium lead halide (MAPbX3, X = I, Br, Cl) thin films analysed by in situ X-ray diffraction

2018 ◽  
Vol 6 (24) ◽  
pp. 11496-11506 ◽  
Author(s):  
Paul Pistor ◽  
Thomas Burwig ◽  
Carlo Brzuska ◽  
Björn Weber ◽  
Wolfgang Fränzel
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Treatment ◽  
Phase Evolution ◽  
X Ray Diffraction ◽  
Crystalline Phases ◽  
X Ray ◽  
Subsequent Thermal Treatment ◽  
Lead Halide

We present the identification of crystalline phases by in situ X-ray diffraction during growth and monitor the phase evolution during subsequent thermal treatment of CH3NH3PbX3 (X = I, Br, Cl) perovskite thin films.

Syntheses, Crystal Structures and Thermal Stability of Co(II) and Zn(II) Complexes with Ethyl Carbazate

2005 ◽  
Vol 60 (5) ◽  
pp. 505-510 ◽  
Author(s):  
Tong-Lai Zhang ◽  
Jiang-Chuang Song ◽  
Jian-Guo Zhang ◽  
Gui-Xia Ma ◽  
Kai-Bei Yu
Keyword(s):  
Thermal Stability ◽  
Aqueous Solutions ◽  
Diffraction Analysis ◽  
Single Crystals ◽  
Slow Evaporation ◽  
X Ray Diffraction ◽  
Element Analysis ◽  
Thermal Stabilities ◽  
X Ray ◽  
Thermal Stability Of

Cobalt(II) and zinc(II) complexes of ethyl carbazate (ECZ), [Co(ECZ)3](NO3)2 and [Zn(ECZ)3] (NO3)2, were synthesized. Single crystals of these two compounds were grown from aqueous solutions using a slow evaporation method. Their structures have been determined by X-ray diffraction analysis. Both of them are monoclinic with space group P21/n. The complexes are further characterized by element analysis and IR measurements. Their thermal stabilities are studied by using TG-DTG, DSC techniques. When heated to 350 °C, only metal oxide was left for both complexes.

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