Ultrafast carrier mobilities in high-resistivity iron-doped Ga0.69In0.31As photoconducting antennas

2009 ◽  
Vol 95 (21) ◽  
pp. 211102 ◽  
Author(s):  
Suranjana Sengupta ◽  
Ingrid Wilke ◽  
Partha. S. Dutta
Keyword(s):  
High Resistivity ◽  
Ultrafast Carrier ◽  
Iron Doped ◽  
Photoconducting Antennas

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

2017 ◽  
Vol 31 (27) ◽  
pp. 1750195 ◽  
Author(s):  
D. I. Khusyainov ◽  
C. Dekeyser ◽  
A. M. Buryakov ◽  
E. D. Mishina ◽  
G. B. Galiev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
High Resistivity ◽  
Ultrafast Carrier Dynamics ◽  
Si Doping ◽  
Ultrafast Optical ◽  
Donor And Acceptor ◽  
Ultrafast Carrier ◽  
Lt Gaas

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

Femtosecond carrier dynamics in native and high resistivity iron-doped GaxIn1−xAs

2010 ◽  
Vol 107 (3) ◽  
pp. 033104 ◽  
Author(s):  
Suranjana Sengupta ◽  
Ingrid Wilke ◽  
Partha. S. Dutta
Keyword(s):  
Carrier Dynamics ◽  
High Resistivity ◽  
Iron Doped

scholarly journals High resistivity and ultrafast carrier lifetime in argon implanted GaAs

1996 ◽  
Vol 69 (17) ◽  
pp. 2569-2571 ◽  
Author(s):  
W. Walukiewicz ◽  
Z. Liliental‐Weber ◽  
J. Jasinski ◽  
M. Almonte ◽  
A. Prasad ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
High Resistivity ◽  
Ultrafast Carrier

scholarly journals Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs

1996 ◽  
Vol 90 (4) ◽  
pp. 851-854 ◽  
Author(s):  
K.P. Korona ◽  
J. Jasiński ◽  
A. Kurpiewski ◽  
M. Kamińska ◽  
C. Jagadish ◽  
...  
Keyword(s):  
High Resistivity ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon
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