Effect of Combined Oxygenation and Gettering on Minority Carrier Lifetime in High-Resistivity FZ Silicon

2004 ◽  
Vol 151 (10) ◽  
pp. G652 ◽  
Author(s):  
M. Lozano ◽  
M. Ullán ◽  
C. Martı́nez ◽  
L. Fonseca ◽  
J. M. Rafı́ ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
High Resistivity

scholarly journals Minority Carrier Lifetime Measurements for Contactless Oxidation Process Characterization and Furnace Profiling

Materials ◽  
2019 ◽  
Vol 12 (1) ◽  
pp. 190 ◽  
Author(s):  
Christian Bscheid ◽  
Christian R. Engst ◽  
Ignaz Eisele ◽  
Christoph Kutter
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Oxidation Process ◽  
Minority Carrier Lifetime ◽  
High Resistivity ◽  
Process Time ◽  
Lifetime Measurements ◽  
Effective Lifetime ◽  
Process Characterization ◽  
The Impact

Contactless minority carrier lifetime (lifetime) measurements by means of microwave detected photoconductivity are employed for oxidation process characterization and furnace profiling. Characterization is performed on oxidized float zone substrates with high resistivity and outstanding bulk quality, suggesting that the measured effective lifetime is strongly dominated by interface recombination and therefore reflects the oxide quality. The applied approach requires neither test structures nor time consuming measurements and is therefore of particular interest if high throughput is required. The method is used to investigate the impact of oxidation furnace leakage as well as to analyze the oxidation homogeneity across a horizontal oxidation furnace. For comparison, capacitance-voltage measurements are conducted to characterize the oxide properties. It is found that any type of furnace leakage, which induces fixed oxide charges as well as interface states, has a heavy impact on the measured effective lifetime, especially on the shape of generation rate dependent lifetime curves. Furthermore, a distinct lifetime decrease towards the tube door of the oxidation furnace could be observed. The latter is even detectable in an ideal oxidation process, generating high quality oxides. Besides plain equipment characterization, the presented approach is suitable to optimize the oxidation process itself regarding different parameters like temperature, gas flow, pressure, or process time.

Evaluation of Surface Passivation Layers for Bulk Lifetime Estimation of High Resistivity Silicon for Radiation Detectors

2007 ◽  
Vol 131-133 ◽  
pp. 431-436 ◽  
Author(s):  
J.M. Rafí ◽  
L. Cardona-Safont ◽  
M. Zabala ◽  
C. Boulord ◽  
F. Campabadal ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Radiation Detectors ◽  
High Resistivity ◽  
Lifetime Estimation ◽  
Passivation Layers ◽  
Set Up ◽  
The Impact

In order to identify an appropriate low-temperature surface passivation that could be used for bulk lifetime estimation of high resistivity (HR) (> 1 k·cm) silicon for radiation detectors, different passivating layers were evaluated on n-type and p-type standard Czochralski (CZ), HR magnetic CZ and HR float zone (FZ) substrates. Minority carrier lifetime measurements were performed by means of a μW-PCD set-up. The results show that SiNx PECVD layers deposited at low temperatures (≤ 250°C) may be used to evaluate the impact of different processing steps and treatments on the substrate characteristics for radiation detectors. First results are obtained about a preliminary thermal treatment experiment to evaluate the thermal stability of the passivating layers, as well as the potential impact of the generation of thermal donors on minority carrier lifetime.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
Sign in / Sign up

Export Citation Format

Share Document