Er-Doped GaAs for High Speed Photoconductor Applications

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Gupta ◽  
S. Sethi ◽  
P. K. Bhattacharya ◽  
S. Williamson
Keyword(s):  
Optical Communications ◽  
Potential Application ◽  
High Speed ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Light Sources ◽  
Erbium Doped ◽  
Er Doped

ABSTRACTThe observation of 1.54 μm luminescence in erbium-doped-GaAs (GaAs:Er) and AlxGal-xAs, has stimulated research efforts because of their potential application to light sources in optical communications. In this paper, we study a different aspect of the photoresponse behavior of this material. The dependence of the carrier lifetime on the doping concentration of Erbium is investigated in GaAs:Er grown by MBE. A reduction in the carrier lifetime down to ∼1 ps is observed for the highest doping (∼5×1019 cm−3) investigated. Together with the high-resistivity observed for the higher doping values, this material serves as a novel photoconductor material for high-speed optoelectronics.

scholarly journals Tin Dioxide Nanocrystals as an Effective Sensitizer for Erbium Ions in Er-Doped SnO2Systems for Photonic Applications

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
Tran T. T. Van ◽  
Nguyen Truc Ly ◽  
Le T. T. Giang ◽  
Cao Thi My Dung
Keyword(s):  
Tin Oxide ◽  
Doping Concentration ◽  
Tin Dioxide ◽  
Precipitation Method ◽  
Doping Content ◽  
Erbium Ions ◽  
Heat Treated ◽  
Erbium Doped ◽  
Average Size ◽  
Er Doped

Undoped SnO2and erbium-doped SnO2powders were successfully prepared by precipitation method. The effect of the heat treatment and doping contents on the structure of tin oxide and optical properties was also studied. The XRD data and Raman spectra indicate that the SnO2crystals have formed after being heat-treated at 400°C and the average size of grains is about 8 nm for doping content of 1 mol%. An increase of doping concentration has controlled the growth of nanocrystals. The principle of the visible and infrared emissions of SnO2and SnO2:Er is also discussed. All photoluminescence study shows that the Er3+ions can be located in SnO2nanocrystals and that there is energy transfer from defect levels of SnO2nanoparticles to neighboring Er3+ions of crystals.

scholarly journals Numerical Investigation of Graphene as a Back Surface Field Layer on the Performance of Cadmium Telluride Solar Cell

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Doping Concentration ◽  
Carrier Lifetime ◽  
Short Circuit ◽  
Back Surface ◽  
Back Surface Field ◽  
Cdte Solar Cell ◽  
Cdte Solar Cells ◽  
Surface Field

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.

scholarly journals Inverted p-down Design for High-Speed Photodetectors

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 39
Author(s):  
Masahiro Nada ◽  
Fumito Nakajima ◽  
Toshihide Yoshimatsu ◽  
Yasuhiko Nakanishi ◽  
Atsushi Kanda ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Optical Communications ◽  
High Speed ◽  
Pulse Amplitude ◽  
Avalanche Photodiode ◽  
Device Fabrication ◽  
Pulse Amplitude Modulation ◽  
Optical Coupling ◽  
Pin Photodiodes

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.

scholarly journals Experimental Measurement of Absorption Coefficients for Effective Erbium-Doping Concentration to Optimize Few-Mode Erbium-Doped Fiber Amplifiers with Low Differential Mode Gain

Photonics ◽  
2021 ◽  
Vol 8 (6) ◽  
pp. 185
Author(s):  
Yan Xu ◽  
Baojian Wu ◽  
Xinrui Jiang ◽  
Haomiao Guo ◽  
Feng Wen
Keyword(s):  
Doping Concentration ◽  
Point Of View ◽  
Fiber Amplifiers ◽  
Efficient Design ◽  
Absorption Loss ◽  
Differential Mode ◽  
Transmission Method ◽  
Modal Gain ◽  
Analysis Process ◽  
Erbium Doped

According to the analytical expression for modal gain of few-mode erbium-doped fiber amplifiers (FM-EDFAs), we propose a method of measuring the absorption loss coefficients of few-mode signals in few-mode erbium-doped fibers (FM-EDFs) by extrapolating the mode–gain curve dependent on the average population inversion. The absorption loss coefficient of an FM-EDF was measured in our experimental platform and used to estimate the effective erbium-ion doping concentration. The feasibility of the extrapolation method was verified by simulation and comparison with the transmission method. Furthermore, the FM-EDFAs with high modal gain and low differential mode gain (DMG) could be optimized by adjusting the FM-EDF’s length and pump power. The analysis process presented here is very useful for the efficient design of FM-EDFAs from a practical point of view.

Silicon-based nonlinear optical devices for high-speed optical communications

2008 ◽  
Author(s):  
Haisheng Rong ◽  
Simon Ayotte ◽  
Shengbo Xu ◽  
Oded Cohen ◽  
Mario Paniccia
Keyword(s):  
Optical Communications ◽  
High Speed ◽  
Nonlinear Optical ◽  
Optical Devices ◽  
Nonlinear Optical Devices ◽  
Silicon Based

scholarly journals Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

2010 ◽  
Vol 97 (24) ◽  
pp. 241105 ◽  
Author(s):  
Q. Wang ◽  
R. Hui ◽  
R. Dahal ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
Carrier Lifetime ◽  
Erbium Doped
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