Ultrafast Carrier Dynamics in Individual Silicon Nanowires: Characterization of Diameter-Dependent Carrier Lifetime and Surface Recombination with Pump–Probe Microscopy

2014 ◽  
Vol 118 (16) ◽  
pp. 8634-8640 ◽  
Author(s):  
Erik M. Grumstrup ◽  
Michelle M. Gabriel ◽  
Emma M. Cating ◽  
Christopher W. Pinion ◽  
Joseph D. Christesen ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Carrier Lifetime ◽  
Surface Recombination ◽  
Carrier Dynamics ◽  
Pump Probe ◽  
Ultrafast Carrier Dynamics ◽  
Probe Microscopy ◽  
Ultrafast Carrier

Ultrafast carrier dynamics in GaN epilayers studied by femtosecond pump-probe spectroscopy

1999 ◽  
Author(s):  
Arthur J. Fischer ◽  
Brian D. Little ◽  
Theodore J. Schmidt ◽  
Chan-Kyung Choi ◽  
Jin-Joo Song ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Pump Probe ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Probe Spectroscopy

Probing Ultrafast Carrier Dynamics in Silicon Nanowires

2011 ◽  
Vol 17 (4) ◽  
pp. 889-895 ◽  
Author(s):  
Ayan Kar ◽  
Prashanth C. Upadhya ◽  
Shadi A. Dayeh ◽  
S. Tom Picraux ◽  
Antoinette J. Taylor ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

2017 ◽  
Vol 31 (27) ◽  
pp. 1750195 ◽  
Author(s):  
D. I. Khusyainov ◽  
C. Dekeyser ◽  
A. M. Buryakov ◽  
E. D. Mishina ◽  
G. B. Galiev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
High Resistivity ◽  
Ultrafast Carrier Dynamics ◽  
Si Doping ◽  
Ultrafast Optical ◽  
Donor And Acceptor ◽  
Ultrafast Carrier ◽  
Lt Gaas

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

scholarly journals Ultrafast carrier dynamics in Cu(In,Ga)Se_2 thin films probed by femtosecond pump-probe spectroscopy

2012 ◽  
Vol 20 (12) ◽  
pp. 12675 ◽  
Author(s):  
Shih-Chen Chen ◽  
Yu-Kuang Liao ◽  
Hsueh-Ju Chen ◽  
Chia-Hsiang Chen ◽  
Chih-Huang Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Carrier Dynamics ◽  
Pump Probe ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Probe Spectroscopy

Ultrafast carrier dynamics in undoped and p-doped InAs∕GaAs quantum dots characterized by pump-probe reflection measurements

2008 ◽  
Vol 103 (8) ◽  
pp. 083121 ◽  
Author(s):  
Hai-Ying Liu ◽  
Zi-Ming Meng ◽  
Qiao-Feng Dai ◽  
Li-Jun Wu ◽  
Qi Guo ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Pump Probe ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier
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