Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O

1996 ◽  
Vol 69 (25) ◽  
pp. 3875-3877 ◽  
Author(s):  
Ming‐Jer Jeng ◽  
Jenn‐Gwo Hwu
Keyword(s):  
Anodic Oxidation ◽  
Gate Oxides ◽  
Nitrogen Incorporation ◽  
Thermal Nitridation

Nitric Oxide Rapid Thermal Nitridation of Thin Gate Oxides

1997 ◽  
Vol 470 ◽  
Author(s):  
J. Kuehne ◽  
S. Hattangady ◽  
J. Piccirillo ◽  
G. C. Xing ◽  
G. E. Miner ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Secondary Ion Mass Spectrometry ◽  
Minority Carrier Lifetime ◽  
Oxide Thickness ◽  
Atomic Percent ◽  
Gate Oxides ◽  
Nitrogen Incorporation ◽  
Nitrogen Concentrations ◽  
Thermal Nitridation ◽  
Percent Nitrogen

ABSTRACTNitric oxide rapid thermal nitridation of thin gate oxides was investigated. Oxides from 25 to 55 Å were grown in O2 and subsequently nitrided in a nitric oxide (NO) ambient using an Applied Materials RTP Centura chamber. Nitrogen incorporation and film thickness growth during NO nitridation were evaluated. Peak nitrogen incorporation was most strongly influenced by temperature and time, with moderate influence by initial oxide thickness, and no significant influence due to NO flow rate. Peak nitrogen concentrations ranged from 1 to 9 atomic percent as characterized by Secondary Ion Mass Spectrometry (SIMS) analysis. Oxide growth during nitridation ranged from 2 Å to 11 Å with no degradation in uniformity. These data were used in the design of two 40 Å oxynitride processes incorporating 2 and 4 peak atomic percent nitrogen. High quality MOS capacitors were demonstrated with these dielectrics. Performance was compared against a baseline furnace process as well as non-nitrided RTO. Throughout this work, the chamber integrity was monitored using visual inspection, minority carrier lifetime (MCLT) and surface photovoltage (SPV). No contamination, corrosion or other degradation of the process chamber was observed in over 6 months' operation with over 700 NO processes completed. The controllability, uniformity and high nitrogen incorporation of rapid thermal NO nitridation make it an attractive process for deep sub-micron gate insulators.

(Rapid) Thermal Nitridation of SiO2 films

1989 ◽  
Vol 146 ◽  
Author(s):  
J.B. Oude Elferink ◽  
F.H.P.M. Habraken ◽  
W.F. van der Weg
Keyword(s):  
Activation Energy ◽  
Silicon Dioxide ◽  
Effective Activation Energy ◽  
Effective Activation ◽  
Nitrogen Incorporation ◽  
Nitridation Process ◽  
Initial Stage ◽  
Thermal Nitridation ◽  
Silicon Nitridation

ABSTRACTIn this paper we report on the composition of thermally nitrided silicon dioxide films on silicon. Nitridation temperatures ranging from 950 to 1150ºC and nitridation times ranging from 10 to 240 s were used. The purpose of this study is to reveal the mechanisms involved in the nitridation process with emphasis on the role of hydrogen. From the temperature dependence of the amount of nitrogen in the films the effective activation energy for nitrogen incorporation in this initial stage was deduced.

Comparison between SiO2 Films and Nitridated Oxides in N2O Ambient in Terms of Bulk/Interface Trapping Properties

1994 ◽  
Vol 338 ◽  
Author(s):  
Constantin Papadas ◽  
Patrick Mortini
Keyword(s):  
Gate Oxides ◽  
Sio2 Films ◽  
Degradation Data ◽  
Nitridation Process ◽  
Advanced Technologies ◽  
Optimum Selection ◽  
Non Volatile Memory ◽  
Thermal Nitridation ◽  
Physical Degradation ◽  
Selection Of

ABSTRACTThe necessity of employing nitridation process in advanced technologies will be underlined. The different technological alternatives for preparing oxinitride layers will be traced back, followed by a review of the methods currently available for assessing the degradation features of the Si/SiO2 system. Furthermore, comparison between pure SiO2 layers and nitridated films in N2O ambient will be conducted in terms of bulk/interface trapping properties and the obtained physical degradation data will be correlated with classical reliability results. Large emphasis will be given on the trapping properties of tunnel oxides used in non—volatile memory arrays and different technological alternatives will be exploited (i.e. Rapid Thermal Nitridation, Furnace Nitridation). In addition, a similar analysis will be carried out for gate oxides. Finally, some guidelines concerning the optimum selection of the furnace nitridation conditions will be given.

Study of Nitrogen Incorporation in Gate Oxides Using the Resistance to Oxidation Method

1996 ◽  
Vol 429 ◽  
Author(s):  
I. Sagnes ◽  
D. Laviale ◽  
M. Regache ◽  
F. Glowacki ◽  
L. Deutschmann ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Gate Oxides ◽  
Thermal Budget ◽  
Nitrogen Incorporation ◽  
Resistance To Oxidation ◽  
Low Thermal Budget ◽  
Direct Use ◽  
Low Nitrogen

Numerous nitridation processes have been studied to obtain very thin (≤ 6 nm), reproducible and reliable gate oxides. Recent results (1,2,3) have confirmed that i) the NO molecule is the species responsible for the nitrogen incorporation at the SiO2/Si interface and that ii) the direct use of NO gas allows the gate oxide to be nitrided at low thermal budget whilst maintaining the same advantages as those of N2O nitridation. NO nitridation of very thin oxides has so far been inadequately documented in terms of incorporated nitrogen concentration at the SiO2/Si interface. It is of prime importance to control the incorporation of a few nitrogen monolayers at the SiO2/Si interface, particularly for device performances in the 0. 18μm CMOS technology. In the following we present results on the control of low nitrogen concentration in pure NO atmosphere, with particular emphasis on a method based on the re-oxidation of nitrided oxides. This method can be used in a production line thus avoiding the high costs and long characterization times associated with SIMS measurements.

Advanced Gate Dielectric Development for VLSI Technology

2008 ◽  
Vol 573-574 ◽  
pp. 133-146
Author(s):  
Yi Ma
Keyword(s):  
Gate Dielectric ◽  
Semiconductor Industry ◽  
Device Performance ◽  
Dielectric Structure ◽  
Integration Schemes ◽  
Nitrogen Incorporation ◽  
Vlsi Technology ◽  
Key Technologies ◽  
Thermal Nitridation

In this paper, gate dielectric scaling with nitrogen incorporation technologies is reviewed. In key technologies such as thermal nitridation, oxide/nitride stacked dielectric structure and nitrogen implant/plasma played fundamental role in advance of semiconductor industry. Besides the technologies, primary integration schemes and their impacts on device performance and reliability are also covered.

A Two-Step, Lightly Nitrided Gate Oxidation Process For Sub-0.5 μm Cmos Technology

1996 ◽  
Vol 428 ◽  
Author(s):  
P. K. Roy ◽  
Y. Ma ◽  
M. T. Flemming
Keyword(s):  
Oxidation Process ◽  
Defect Density ◽  
Charge Trapping ◽  
Cmos Technology ◽  
Simple Extension ◽  
Gate Oxides ◽  
Nitrogen Incorporation ◽  
Oxide Characteristics

AbstractThis work describes a two-step, lightly nitrided gate oxidation process for sub-0.5 jtm CMOS technology. This process is a simple extension of conventional oxidation using an in-situ N2O post oxidation anneal for nitrogen incorporation. Light nitrogen incorporation (∼3%) near the Si/SiO2 interface has improved oxide characteristics such as defect density (Do.), wear-out (Nbd), breakdown (Vbd) and tunneling (VFN) without altering its charge trapping behavior. Impacts of nitridation are more significant for thinner (<65Å) gate oxides (GOX).

Oxidation of Silicon and Nitridaticn of SiO2 by Rapid Thermal Processes

1987 ◽  
Vol 92 ◽  
Author(s):  
N. Chan Tung ◽  
Y. Caratini ◽  
J.L. Buevoz
Keyword(s):  
Oxide Thickness ◽  
Breakdown Field ◽  
Thermal Processes ◽  
Electrical Characteristics ◽  
Gate Oxides ◽  
A Value ◽  
High Resolution Tem ◽  
S Period ◽  
Thermal Nitridation ◽  
Mis Capacitors

ABSTRACTThin gate oxides of 30 to 150 Å have been grown in a rapid thermal annealing machine. Experiments were performed in the temperature range of 1000 to 1250°C for an oxidation time of 5 to 60 s. The fairly extensive kinetics data show that linear growth occurs with an activation energy Ea of 1.4 eV for the 5-60 s period. The oxide homogeneity was evaluated and gave a value of 1.9 A for a mean oxide thickness of 102 A. The electrical characteristics of Al-gate capacitors were assessed by C-V and I-V measurements. Rapid thermal nitridation of a 96 A SiO2 has been performed at a temperature of 1150°C for a nitridaticn time up to 150 s. An average breakdown field of 14.6 MV/cm has been obtained for MIS capacitors. High resolution TEM show a good interface SioXNY-Si.

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