Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type

Electron Injection-Induced Effects in GaN: Physics and Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Leonid Chernyak ◽  
William Burdett
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Luminescent Properties ◽  
Electron Injection ◽  
Pronounced Increase ◽  
Minority Carrier Diffusion Length ◽  
Electron Beam Induced Current ◽  
P Type

AbstractElectron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material's luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Ronald E. Bell ◽  
Serguei Ostapenko ◽  
Jacek Lagowski
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Surface Photovoltage ◽  
Defect Engineering ◽  
Acceptor Reaction ◽  
Minority Carrier Diffusion Length ◽  
Enhanced Diffusion ◽  
Type Silicon ◽  
P Type

AbstractExperimental evidence is provided for ultrasound stimulated dissociation of metal-acceptor pairs in silicon, and also for enhanced diffusion of metal interstitials which may lead to enhanced pairing. The first effect is found dominant in Fe-doped p-type silicon where ultrasound causes low temperature dissociation of Fe-B pairs. This is in contrast to Cr-doped p-type silicon where ultrasound enhances the formation of Cr-B pairs due to enhanced diffusivity of Cr by as much as two orders of magnitude.In this study, the metal-acceptor reaction was monitored in situ via corresponding changes of the minority carrier diffusion length measured by non-contact surface photovoltage. Ultrasound-stimulated pair reaction can be utilized for metal diagnostics for the silicon IC industry. Thus, with ultrasound, Cr-B pairing can be reduced from months to hours, making possible the identification of Cr via pairing kinetics in a reasonable period of time.

scholarly journals Photogenerated Carrier Transport Properties in Silicon Photovoltaics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Prakash Uprety ◽  
Indra Subedi ◽  
Maxwell M. Junda ◽  
Robert W. Collins ◽  
Nikolas J. Podraza
Keyword(s):  
Solar Cell ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Transport Parameters ◽  
Majority Carrier ◽  
Optical Hall Effect ◽  
P Type

AbstractElectrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (μ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally “dark” conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 1018 cm−3, (7.6 ± 0.1) × 1015 cm−3]; μ = [166 ± 6 cm2/Vs, 532 ± 12 cm2/Vs]; and m* = [(0.28 ± 0.03) × me, (0.36 ± 0.02) × me]. All values are within expectations for this device design. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under “light” 1 sun illumination (AM1.5 solar irradiance spectrum). From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters [minority carrier concentration (Δp or Δn) and minority carrier mobility (μh or μe)] under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Photogenerated minority carrier concentrations are [(7.8 ± 0.2) × 1016 cm−3, (2.2 ± 0.2) × 1014 cm−3], and minority carrier mobilities are [331 ± 191 cm2/Vs, 766 ± 331 cm2/Vs], for the [n, p]-type Si, respectively, values that are within expectations from literature. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell.

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