Ultrasound Defect Engineering of Transition Metals Via Metal-Acceptor Pairs in Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
Ronald E. Bell ◽  
Serguei Ostapenko ◽  
Jacek Lagowski
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Surface Photovoltage ◽  
Defect Engineering ◽  
Acceptor Reaction ◽  
Minority Carrier Diffusion Length ◽  
Enhanced Diffusion ◽  
Type Silicon ◽  
P Type

AbstractExperimental evidence is provided for ultrasound stimulated dissociation of metal-acceptor pairs in silicon, and also for enhanced diffusion of metal interstitials which may lead to enhanced pairing. The first effect is found dominant in Fe-doped p-type silicon where ultrasound causes low temperature dissociation of Fe-B pairs. This is in contrast to Cr-doped p-type silicon where ultrasound enhances the formation of Cr-B pairs due to enhanced diffusivity of Cr by as much as two orders of magnitude.In this study, the metal-acceptor reaction was monitored in situ via corresponding changes of the minority carrier diffusion length measured by non-contact surface photovoltage. Ultrasound-stimulated pair reaction can be utilized for metal diagnostics for the silicon IC industry. Thus, with ultrasound, Cr-B pairing can be reduced from months to hours, making possible the identification of Cr via pairing kinetics in a reasonable period of time.

Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing

1987 ◽  
Vol 106 ◽  
Author(s):  
K. Masri ◽  
J. P. Boyeaux ◽  
S. N. Kumar ◽  
L. Mayet ◽  
A. Laugier
Keyword(s):  
Grain Boundary ◽  
Light Beam ◽  
High Performance ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Induced Current ◽  
Minority Carrier Diffusion Length ◽  
A Value ◽  
Recombination Velocity ◽  
P Type

ABSTRACTA high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.

Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

2017 ◽  
Vol 122 (11) ◽  
pp. 115702 ◽  
Author(s):  
M. Niemeyer ◽  
J. Ohlmann ◽  
A. W. Walker ◽  
P. Kleinschmidt ◽  
R. Lang ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Diffusion Length ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion ◽  
P Type

Electron Injection-Induced Effects in GaN: Physics and Applications

2003 ◽  
Vol 764 ◽  
Author(s):  
Leonid Chernyak ◽  
William Burdett
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Luminescent Properties ◽  
Electron Injection ◽  
Pronounced Increase ◽  
Minority Carrier Diffusion Length ◽  
Electron Beam Induced Current ◽  
P Type

AbstractElectron injection into p-type GaN and related compounds leads to a pronounced increase in the minority carrier lifetime. This increase is manifested in a multiple-fold elongation of the minority carrier diffusion length as is evident from the Electron Beam Induced Current (EBIC) measurements in-situ in a Scanning Electron Microscope. Minority carrier transport enhancement as a result of electron injection is consistent with the changes observed in the material's luminescent properties. Based on the activation energy for the electron injection-induced effects, we ascribe this phenomenon to charging of Mg-acceptor related levels. In addition, we demonstrate an impact of electron injection on responsivity of GaN p-i-n photodetectors.

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