Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII
Latest Publications

TOTAL DOCUMENTS

103

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By Trans Tech Publications Ltd.

3908451434

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.77 ◽

2007 ◽

pp. 77-82

Author(s):

Nelly Burle ◽

Bernard Pichaud ◽

V.I. Vdovin ◽

M.M. Rzaev

Keyword(s):

Low Temperature ◽

Buffer Layers ◽

X Ray

Download Full-text

Characterization of SiO2/Si Interface by Cathodoluminescent Method

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.629 ◽

2007 ◽

pp. 629-634

Author(s):

M.V. Zamoryanskaya ◽

V.I. Sokolov

Download Full-text

The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.607 ◽

2007 ◽

pp. 607-612

Author(s):

E.A. Steinman ◽

A.N. Tereshchenko ◽

N.V. Abrosimov

Keyword(s):

Temperature Shift ◽

Doped Silicon

Download Full-text

Regular Dislocation Networks in Silicon. Part I: Structure

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.571 ◽

2007 ◽

pp. 571-578

Author(s):

T. Wilhelm ◽

Teimuraz Mchedlidze ◽

X. Yu ◽

T. Arguirov ◽

Martin Kittler ◽

...

Download Full-text

Silicon Epitaxial Layers for CCD and CMOS Imager Sensors : Limits and Challenges of the In-Line and Off-Line Metal Detection Techniques

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.467 ◽

2007 ◽

pp. 467-472

Author(s):

G. Borionetti ◽

S. Cox ◽

P. Godio ◽

I. Gohar ◽

J. Pitney ◽

...

Keyword(s):

Epitaxial Layers ◽

Detection Techniques ◽

Cmos Imager ◽

Metal Detection

Download Full-text

Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.455 ◽

2007 ◽

pp. 455-460

Author(s):

Hiroshi Yamada-Kaneta ◽

Terutaka Goto ◽

Yuichi Nemoto ◽

Koji Sato ◽

Masatoshi Hikin ◽

...

Keyword(s):

Growth Rate ◽

Low Temperature ◽

Silicon Crystal ◽

Ultrasonic Measurements

Download Full-text

Radiation Enhanced Diffusion of Implanted Palladium in Silicon

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.381 ◽

2007 ◽

pp. 381-386

Author(s):

Jan Vobecký

Keyword(s):

Enhanced Diffusion ◽

Radiation Enhanced Diffusion

Download Full-text

Properties of Si:Cr Annealed under Enhanced Stress Conditions

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.375 ◽

2007 ◽

pp. 375-380

Author(s):

Andrzej Misiuk ◽

Adam Barcz ◽

L. Chow ◽

Barbara Surma ◽

Jadwiga Bak-Misiuk ◽

...

Keyword(s):

Stress Conditions

Download Full-text

IR Studies on the Interaction between Thermal and Radiation Defects in Silicon

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.351 ◽

2007 ◽

pp. 351-356

Author(s):

Charalamos A. Londos ◽

G.D. Antonaras ◽

M.S. Potsidi ◽

E.N. Sgourou ◽

I.V. Antonova ◽

...

Keyword(s):

Radiation Defects ◽

Ir Studies

Download Full-text

A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII ◽

10.4028/3-908451-43-4.309 ◽

2007 ◽

pp. 309-314

Author(s):

Heidi Nordmark ◽

Alexander G. Ulyashin ◽

John Charles Walmsley ◽

Randi Holmestad

Keyword(s):

Comparative Analysis ◽

Structural Defect ◽

Defect Formation ◽

Crystalline Silicon

Download Full-text

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XIILatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Trans Tech Publications Ltd.

Very First Relaxation Steps in Low Temperature Buffer Layers SiGe/Si Heterostructures Studied by X-Ray Topography

Characterization of SiO2/Si Interface by Cathodoluminescent Method

The Unusual Temperature Shift of Dislocation Related D1/D2 PL Bands in Donor Doped Silicon

Regular Dislocation Networks in Silicon. Part I: Structure

Silicon Epitaxial Layers for CCD and CMOS Imager Sensors : Limits and Challenges of the In-Line and Off-Line Metal Detection Techniques

Vacancies in Growth-Rate-Varied CZ Silicon Crystal Observed by Low-Temperature Ultrasonic Measurements

Radiation Enhanced Diffusion of Implanted Palladium in Silicon

Properties of Si:Cr Annealed under Enhanced Stress Conditions

IR Studies on the Interaction between Thermal and Radiation Defects in Silicon

A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon

Solid State Phenomena - Gettering and Defect Engineering in Semiconductor Technology XII
Latest Publications