Identification of Cr in p‐type silicon using the minority carrier lifetime measurement by the surface photovoltage method

1996 ◽  
Vol 68 (23) ◽  
pp. 3281-3283 ◽  
Author(s):  
Kamal Mishra
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurement ◽  
Surface Photovoltage ◽  
Type Silicon ◽  
P Type

The effect of oxide precipitates on minority carrier lifetime in p-type silicon

2011 ◽  
Vol 110 (5) ◽  
pp. 053713 ◽  
Author(s):  
J. D. Murphy ◽  
K. Bothe ◽  
M. Olmo ◽  
V. V. Voronkov ◽  
R. J. Falster
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type

Minority Carrier Lifetime Dependence on Resistivity in High‐Purity p‐Type Silicon

1999 ◽  
Vol 146 (9) ◽  
pp. 3494-3499
Author(s):  
P. Geranzani ◽  
M. Porrini ◽  
G. Borionetti ◽  
R. Orizio ◽  
R. Falster
Keyword(s):  
High Purity ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
P Type

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

2001 ◽  
Vol 45 (12) ◽  
pp. 1973-1978 ◽  
Author(s):  
Mohamed Hilali ◽  
Abasifreke Ebong ◽  
Ajeet Rohatgi ◽  
Daniel L Meier
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cell Performance ◽  
Silicon Ribbon ◽  
P Type

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

2021 ◽  
Vol 119 (18) ◽  
pp. 182106
Author(s):  
K. Shima ◽  
R. Tanaka ◽  
S. Takashima ◽  
K. Ueno ◽  
M. Edo ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
P Type

On the Measurement of Minority Carrier Lifetime in n-Type Silicon

1955 ◽  
Vol 68 (3) ◽  
pp. 121-129 ◽  
Author(s):  
J B Arthur ◽  
W Bardsley ◽  
A F Gibson ◽  
C A Hogarth
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon

scholarly journals Minority Carrier Lifetime Measurement in Nanowire Based Solar Cells by a Reverse Recovery Transient Method

2014 ◽  
Vol 60 ◽  
pp. 181-190
Author(s):  
M. Daanoune ◽  
D. Kohen ◽  
A. Kaminski-Cachopo ◽  
C. Morin ◽  
P. Faucherand ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurement ◽  
Transient Method

scholarly journals Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

2014 ◽  
Vol 407 ◽  
pp. 31-36 ◽  
Author(s):  
Maulid Kivambe ◽  
Douglas M. Powell ◽  
Sergio Castellanos ◽  
Mallory Ann Jensen ◽  
Ashley E. Morishige ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Type Silicon ◽  
Defect Content
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