Minority-carrier transport parameters in heavily doped p-type silicon at 296 and 77 K

1993 ◽  
Vol 40 (10) ◽  
pp. 1872-1875 ◽  
Author(s):  
I.-Y. Leu ◽  
A. Neugroschel
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Transport Parameters ◽  
Type Silicon ◽  
Heavily Doped ◽  
P Type

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

Measurement of the minority-carrier transport parameters in heavily doped silicon

1980 ◽  
Vol 27 (5) ◽  
pp. 949-955 ◽  
Author(s):  
R.P. Mertens ◽  
J.L. Van Meerbergen ◽  
J.F. Nijs ◽  
R.J. Van Overstraeten
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Transport Parameters ◽  
Doped Silicon ◽  
Heavily Doped

scholarly journals Photogenerated Carrier Transport Properties in Silicon Photovoltaics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Prakash Uprety ◽  
Indra Subedi ◽  
Maxwell M. Junda ◽  
Robert W. Collins ◽  
Nikolas J. Podraza
Keyword(s):  
Solar Cell ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Transport Parameters ◽  
Majority Carrier ◽  
Optical Hall Effect ◽  
P Type

AbstractElectrical transport parameters for active layers in silicon (Si) wafer solar cells are determined from free carrier optical absorption using non-contacting optical Hall effect measurements. Majority carrier transport parameters [carrier concentration (N), mobility (μ), and conductivity effective mass (m*)] are determined for both the n-type emitter and p-type bulk wafer Si of an industrially produced aluminum back surface field (Al-BSF) photovoltaic device. From measurements under 0 and ±1.48 T external magnetic fields and nominally “dark” conditions, the following respective [n, p]-type Si parameters are obtained: N = [(3.6 ± 0.1) × 1018 cm−3, (7.6 ± 0.1) × 1015 cm−3]; μ = [166 ± 6 cm2/Vs, 532 ± 12 cm2/Vs]; and m* = [(0.28 ± 0.03) × me, (0.36 ± 0.02) × me]. All values are within expectations for this device design. Contributions from photogenerated carriers in both regions of the p-n junction are obtained from measurements of the solar cell under “light” 1 sun illumination (AM1.5 solar irradiance spectrum). From analysis of combined dark and light optical Hall effect measurements, photogenerated minority carrier transport parameters [minority carrier concentration (Δp or Δn) and minority carrier mobility (μh or μe)] under 1 sun illumination for both n- and p-type Si components of the solar cell are determined. Photogenerated minority carrier concentrations are [(7.8 ± 0.2) × 1016 cm−3, (2.2 ± 0.2) × 1014 cm−3], and minority carrier mobilities are [331 ± 191 cm2/Vs, 766 ± 331 cm2/Vs], for the [n, p]-type Si, respectively, values that are within expectations from literature. Using the dark majority carrier concentration and the effective equilibrium minority carrier concentration under 1 sun illumination, minority carrier effective lifetime and diffusion length are calculated in the n-type emitter and p-type wafer Si with the results also being consistent with literature. Solar cell device performance parameters including photovoltaic device efficiency, open circuit voltage, fill factor, and short circuit current density are also calculated from these transport parameters obtained via optical Hall effect using the diode equation and PC1D solar cell simulations. The calculated device performance parameters are found to be consistent with direct current-voltage measurement demonstrating the validity of this technique for electrical transport property measurements of the semiconducting layers in complete Si solar cells. To the best of our knowledge, this is the first method that enables determination of both minority and majority carrier transport parameters in both active layers of the p-n junction in a complete solar cell.

Noninjecting, high-barrier junctions on p-type silicon

1985 ◽  
Vol 63 (6) ◽  
pp. 723-726
Author(s):  
N. Garry Tarr
Keyword(s):  
Minority Carrier ◽  
Bipolar Transistors ◽  
Carrier Injection ◽  
Type Silicon ◽  
Current Densities ◽  
Heavily Doped ◽  
P Type ◽  
Ultrathin Oxide ◽  
Transient Measurements

The fabrication of junctions with very low minority-carrier injection ratios and reasonably good diode characteristics on p-type silicon is reported. These junctions were formed by growing an ultrathin oxide layer on a monocrystalline substrate, depositing polysilicon heavily doped in situ with phosphorus over the oxide, overlaying the polysilicon with aluminum, and then annealing the resulting sandwich structure at temperatures in the range 400–450 °C. The junctions can exhibit leakage current densities below 10−6 A∙cm−2 at moderate reverse bias and reverse breakdown voltages in excess of 20 V. The absence of minority-carrier injection has been demonstrated by diode reverse recovery transient measurements and by the fabrication of bipolar transistors employing these junctions as emitters.

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