Electrical characterization of AlxGa1−xAs grown by low‐pressure organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

1995 ◽  
Vol 66 (2) ◽  
pp. 183-185 ◽  
Author(s):  
Nicholas G. Paraskevopoulos ◽  
Sigrid R. McAfee ◽  
William S. Hobson
Keyword(s):  
Vapor Phase ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Trimethylamine Alane ◽  
Aluminum Precursor

Growth and characterization of Fe‐doped semi‐insulating InP prepared by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine

1991 ◽  
Vol 69 (12) ◽  
pp. 8139-8144 ◽  
Author(s):  
Rong‐Ting Huang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Wally Burke ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi
Keyword(s):  
Crystal Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Carrier Gases

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

Electrical Characterization of Ruthenium-Doped InP Grown by Low Pressure Hydride Vapor Phase Epitaxy

2001 ◽  
Vol 4 (6) ◽  
pp. G53 ◽  
Author(s):  
D. Söderström ◽  
S. Lourdudoss ◽  
M. Wallnäs ◽  
A. Dadgar ◽  
O. Stenzel ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 880-882 ◽  
Author(s):  
M. K. Lee ◽  
D. S. Wuu ◽  
H. H. Tung ◽  
K. Y. Yu ◽  
K. C. Huang
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Substrates
Sign in / Sign up

Export Citation Format

Share Document