High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor

1991 ◽  
Vol 58 (1) ◽  
pp. 77-79 ◽  
Author(s):  
W. S. Hobson ◽  
T. D. Harris ◽  
C. R. Abernathy ◽  
S. J. Pearton
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality ◽  
Trimethylamine Alane ◽  
Aluminum Precursor

scholarly journals Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 2, No. 11B) ◽  
pp. L1321-L1324 ◽  
Author(s):  
Fu-Hsiang Yang ◽  
Jih-Sheng Hwang ◽  
Ying-Jay Yang ◽  
Kuei-Hsien Chen ◽  
Jih-Hsiang Wang
Keyword(s):  
Vapor Phase ◽  
High Speed ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine

1988 ◽  
Vol 53 (4) ◽  
pp. 304-306 ◽  
Author(s):  
R. R. Saxena ◽  
J. E. Fouquet ◽  
V. M. Sardi ◽  
R. L. Moon
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

High quality long‐wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

1990 ◽  
Vol 56 (15) ◽  
pp. 1439-1441 ◽  
Author(s):  
B. I. Miller ◽  
M. G. Young ◽  
M. Oron ◽  
U. Koren ◽  
D. Kisker
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality ◽  
Long Wavelength

Low‐threshold GaAs/AlGaAs quantum‐well lasers grown by organometallic vapor‐phase epitaxy using trimethylamine alane

1991 ◽  
Vol 70 (1) ◽  
pp. 432-435 ◽  
Author(s):  
W. S. Hobson ◽  
J. P. van der Ziel ◽  
A. F. J. Levi ◽  
J. O’Gorman ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Low Threshold ◽  
Trimethylamine Alane

GaAs/AlGaAs quantum well and modulation‐doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane

1991 ◽  
Vol 59 (16) ◽  
pp. 1975-1977 ◽  
Author(s):  
W. S. Hobson ◽  
F. Ren ◽  
M. Lamont Schnoes ◽  
S. K. Sputz ◽  
T. D. Harris ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Trimethylamine Alane

PHOTOCURRENT STUDY OF ERBIUM DELTA-DOPED InP GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4436-4440
Author(s):  
W. PECHARAPA ◽  
J. NUKEAW
Keyword(s):  
Electric Field ◽  
Vapor Phase ◽  
Exposure Time ◽  
Exposure Duration ◽  
Room Temperature ◽  
Vapor Phase Epitaxy ◽  
Significant Shift ◽  
Organometallic Vapor Phase Epitaxy ◽  
Quantum Structure ◽  
High Quality

The photocurrent of erbium delta-doped InP grown by organometallic vapor phase epitaxy was observed at room temperature. The clear PC spectra of doped samples reflect the high quality formation of ErP quantum structure in InP. The PC spectra of doped sample with different Er exposure duration show that the total number of ErP islands increase with increasing exposure time, reflected in the sharper PC spectra. When applying an electric field, the spectra of the doped sample exhibit significant shift with increasing field.

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