X-ray characterization of composition and relaxation of AlxGa1−xN(0≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy

2010 ◽  
Vol 108 (4) ◽  
pp. 043526 ◽  
Author(s):  
James Tweedie ◽  
Ramon Collazo ◽  
Anthony Rice ◽  
Jinqiao Xie ◽  
Seiji Mita ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray

Growth and characterization of Fe‐doped semi‐insulating InP prepared by low‐pressure organometallic vapor phase epitaxy with tertiarybutylphosphine

1991 ◽  
Vol 69 (12) ◽  
pp. 8139-8144 ◽  
Author(s):  
Rong‐Ting Huang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Wally Burke ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy

Crystal Growth and Electrical Characterization of InSbN Grown by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 799 ◽  
Author(s):  
T. Ishiguro ◽  
Y. Kobori ◽  
Y. Nagawa ◽  
Y. Iwamura ◽  
S. Yamaguchi
Keyword(s):  
Crystal Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Electrical Characterization ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Carrier Gases

ABSTRACTInSb1-xNx was grown on GaAs substrate by low-pressure metalorganic vapor phase epitaxy. Carrier gases were hydrogen or the mix of hydrogen and nitrogen. In both cases, X-ray analysis demonstrated that nitrogen was incorporated into InSb1-xNx up to 0.24.

Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy

1988 ◽  
Vol 52 (11) ◽  
pp. 880-882 ◽  
Author(s):  
M. K. Lee ◽  
D. S. Wuu ◽  
H. H. Tung ◽  
K. Y. Yu ◽  
K. C. Huang
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Si Substrates

In-situ X-ray studies of organometallic vapor phase epitaxy growth

1995 ◽  
Vol 30 (2-3) ◽  
pp. 99-108 ◽  
Author(s):  
P.H. Fuoss ◽  
D.W. Kisker ◽  
G.B. Stephenson ◽  
S. Brennan
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray

Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1313-1317 ◽  
Author(s):  
Rong -Ting Huang ◽  
Ching -Long Jiang ◽  
Ami Appelbaum ◽  
Daniel Renner ◽  
Stanley W. Zehr
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Organometallic Vapor Phase Epitaxy ◽  
Inp Substrates
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